scholarly journals Synthesis and Properties of (Bi, Cd)-doped CuMn2O4 thin films by sol-gel dip-coating method

2021 ◽  
Vol 22 (4) ◽  
pp. 734-741
Author(s):  
Abdelmalek Kharroubi ◽  
Aboulkacem Khiali ◽  
Hadj Benhebal ◽  
Bedhiaf Benrabah ◽  
Salima Lellou ◽  
...  

The present work is carried out within the framework of a research project launched within the physical engineering laboratory at the University of Tiaret in Algeria. The objective is to optimize the conditions for producing thin films of pure spinel oxides doped with different metallic elements. Thus, in this part, we prepared thin films of pure CuMn2O4 and doped with Bi and Cd at rates of 6 and 9% by the sol-gel Dip-coating method. The materials obtained exhibit acceptable crystallinity, excellent optical transmittance with bandgap energies of between 1.64 eV and 1.9 eV and good electrical conductivity.

Author(s):  
Abdelouahab Noua ◽  
Rebai Guemini ◽  
Hichem Farh ◽  
Mourad Zaabat

In this study, pure nickel oxide thin films were prepared by a sol-gel dip coating method with different withdrawal speeds, onto glass substrates and their structural, optical and morphological properties were investigated. The structural properties of NiO films were characterized by X-ray diffraction (XRD), Polycrystalline structures of the prepared films were detected. The optical properties of the films were studied by UV–visible spectrophotometer and the optical transmittance of the films within the visible and near infrared region was found to be more than 75% and decrease when the withdrawal speed increase. The surface morphology of the films was observed by atomic force microscopy and it was found that the root mean square (RMS) roughness increases from 3.78 to 15 nm when the withdrawal speed increased from 30 to70 mm/min. Thus, the withdrawal speed is a key factor to change the NiO thin films properties.


2017 ◽  
Vol 4 (9) ◽  
pp. 096403 ◽  
Author(s):  
Zohra N Kayani ◽  
Marya Siddiq ◽  
Saira Riaz ◽  
Shahzad Naseem

2012 ◽  
Vol 61 (12) ◽  
pp. 1925-1931 ◽  
Author(s):  
Sang-heon Lee ◽  
Wonshoup So ◽  
Jae Hak Jung ◽  
Giwoong Nam ◽  
Hyunggil Park ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 193-199 ◽  
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
Mohamed Zahidi Musa ◽  
Mohd Zainizan Sahdan ◽  
Mohamad Rusop Mahmood

Recent research papers for zinc oxide (ZnO) thin films prepared by dip-coating method are reviewed. The aim is on the factors affecting the properties of ZnO thin films prepared by dip-coating method and the preparation of ZnO solution precursor using sol-gel process. Several of journals have been discovered to find out the related study on this topic. It was found that solution chemical equilibrium, substrate and thermal processing are the factors that contribute to the various properties of ZnO thin films. This review hopefully can help in improving the properties of ZnO thin film for possible applications to photoconductor, integrated sensor, transparent conducting oxide electrodes, optoelectronic devices and so on.


2007 ◽  
Vol 336-338 ◽  
pp. 283-286 ◽  
Author(s):  
Zan Zheng ◽  
Xiao Ting Li ◽  
Gao Rong Han ◽  
Wen Jian Weng ◽  
Pi Yi Du

(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.


2013 ◽  
Vol 16 (1) ◽  
pp. 92-100
Author(s):  
Chien Mau Dang ◽  
Dam Duy Le ◽  
Tam Thi Thanh Nguyen ◽  
Dung Thi My Dang

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.


2018 ◽  
Vol 36 (3) ◽  
pp. 427-434 ◽  
Author(s):  
S. Benzitouni ◽  
M. Zaabat ◽  
A. Mahdjoub ◽  
A. Benaboud ◽  
B. Boudine

AbstractHeavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.


Author(s):  
G. Celichowski ◽  
K. Chrobak

Fluorocyclophospazenes’ derivatives were used as modifiers for improving tribological properties of thin films prepared by sol-gel technique. Thin films were made on the base of aminopropyltriethoxysilane (APTS). All films were deposited by dip-coating method and post-treated by heat, UV radiation and low pressure of RF plasma. Chemical changes in sol-gel films during all steps of post-treatments and modifications were monitored by FT-IR spectroscopy and SIMS spectrometry. Topographies of modified surfaces were imaged by Atomic Force Microscopy (AFM). After final modification significant improvements of frictional properties were observed as well as their very good thermal stability.


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