scholarly journals Characteristics and optical properties of Fe3+ doped SiO2/TiO2 thin films prepared by the sol-gel dip-coating method

2013 ◽  
Vol 16 (1) ◽  
pp. 92-100
Author(s):  
Chien Mau Dang ◽  
Dam Duy Le ◽  
Tam Thi Thanh Nguyen ◽  
Dung Thi My Dang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Water Contact ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

In this study, we have successfully synthesized Fe3+ doped SiO2/TiO2 thin films on glass substrates using the sol-gel dip-coating method. After synthesizing, the samples were annealed at 5000C in the air for 1 hour. The characteristics and optical properties of Fe3+ doped SiO2/TiO2 films were then investigated by X-ray diffraction (XRD), ultraviolet-visible spectroscopy (UV-vis) and Fourier transform infrared spectroscopy (FT-IR). An antifogging ability of the glass substrates coated with the fabricated film is investigated and explained by a water contact angle under visible-light. The analyzed results also show that the crystalline phase of TiO2 thin films comprised only the anatase TiO2, but the crystalline size decreased from 8.8 to 5.9 nm. We also observed that the absorption edge of Fe3+- doped SiO2/TiO2 thin films shifted towards longer wavelengths (i.e. red shifted) from 371.7nm to 409.2 nm when the Fe3+-doped concentration increased from 0 to 1 % mol.

Synthesis and Characterization of Nanocrystalline TiO2 Thin Films by Sol-Gel Dip Coating Method

2013 ◽  
Vol 678 ◽  
pp. 108-112 ◽  
Author(s):  
Narayanaswamy Gokilamani ◽  
N. Muthukumarasamy ◽  
Mariyappan Thambidurai
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Atomic Force ◽  
Coating Method ◽  
Nanocrystalline Titanium ◽  
Dip Coating Method

Nanocrystalline titanium dioxide (TiO2) thin films have been prepared by dip coating method. The TiO2 thin films have been coated on glass substrate and annealed at 400, 450 and 500° C respectively. The X- ray diffraction pattern shows that TiO2 nanocrystalline thin films are of anatase structure and the grain size is found to be in the range of 20-35 nm. The annealed films have been observed to be nanocrystalline in nature and the crystallinity has been observed to improve on annealing. The surface topography of the films has been studied using atomic force microscope. The optical properties have been studied using transmittance spectra. The band gap has been found to lie in the range of 3.70 to 3.83 eV depending on the annealing temperature.

Influence of Multi-Round Annealing Process on the Optical and Electrical Properties of Sol-Gel Derived TiO2-δ Films

2012 ◽  
Vol 465 ◽  
pp. 165-171
Author(s):  
Jin Ming Liu ◽  
Xiao Ru Zhao ◽  
Li Bing Duan ◽  
Xiao Jun Bai ◽  
Ning Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Dip Coating ◽  
Annealing Process ◽  
Visible Range ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

Anatase TiO2- thin films on glass substrates were prepared by sol-gel dip-coating method. We designed a multi-round annealing process which was under the air pressure of 5 Pa and then 5×10-2 Pa for one hour each at 550 °C, and such process was repeated for three times. The special designed annealing process can obviously improve the conductivity of the udoped TiO2- thin films. The minimum resistivity of the undoped TiO2- thin films reached 0.8 Ω cm after being treated by the multi-round annealing process. It was demonstrated that such annealing process was an effective way to increase the defects in TiO2- thin films such as oxygen vacancies. The average transmittances of the films were approximately 60~80% in the visible range with the forbidden gaps of 3.25~3.35 eV. After the multi-round annealing process, the optical forbidden gaps of the films became narrowed slightly, which might be also related to the defects introduced during the multi-annealing process.

Sol–Gel Synthesis of Nickel-Doped Cr2O3 Thin Films

2017 ◽  
Vol 05 (04) ◽  
pp. 1750012 ◽  
Author(s):  
Ahlam Zekaik ◽  
Hadj Benhebal ◽  
Bedhiaf Benrabah ◽  
Aziza Chibout ◽  
Nacera Tayebi ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Parallel Circuit ◽  
Dip Coating Method ◽  
Sol Gel Synthesis ◽  
Synthesized Materials

This work presents an experimental study dedicated to the synthesis and characterization of pure and Ni-doped chromium (III) oxide thin films. Sol–gel thin films with doping rates of 3%, 6%, 9%, and 12% were deposited onto glass substrates by the dip-coating method at room temperature using Cr(NO3)3: 9H2O as precursor. Using X-ray diffraction (XRD), infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis), and impedance spectroscopy on solids, we noted that the films are polycrystalline with a grain size ranging from 11.2[Formula: see text]nm to 24.4[Formula: see text]nm, the synthesized materials are highly transparent in the visible light with more than 90% of transmittance and have an optical bandgap less than 3.0[Formula: see text]eV overall, and the equivalent circuit of the deposited films is a resistors and capacitors (RC) parallel circuit.

PREPARATION OF CdIn2Se4n-TYPE SEMICONDUCTOR USED AS THERMOELECTRIC MATERIAL BY SOL–GEL METHOD

2009 ◽  
Vol 02 (04) ◽  
pp. 199-203 ◽  
Author(s):  
AUN-ANONG RUANTHON ◽  
THAPANEE SARAKONSRI ◽  
CHANCHANA THANACHAYANONT
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Alkoxides ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Type Semiconductor ◽  
Dip Coating Method ◽  
Cadmium Indium

The objective of this research was to study the effect of various parameters such as temperature and pH to the formation of cadmium indium selenide ( CdIn2 Se 4 ) thin films, which were fabricated by sol–gel dip-coating method. This n-type semiconductor compound is suitable for application as thermoelectric materials. Cadmium, indium, selenium precursors were separately dissolved by solvents: ethanol, hydrochloric acid, and acetic acid to form metal alkoxides. The precursor solutions were then mixed together in N 2 atmosphere. These metal alkoxides were hydrolyzed by adding water and then polycondensed by adding ethylene glycol to become gels. These gels were adjusted to various acid-base values by adding diethylnolamine. Glass substrates were dipped into the gels to form thin films. These thin films were annealed at various temperatures in N 2 atmosphere and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and fourier transfrom infrared spectroscopy (FTIR) techniques. The results indicated that CdIn2 Se 4 compound occurred by the reaction at room temperature with pH 4 and annealed at 450°C in N 2 atmosphere.

Effect of annealing temperature on structural, morphological and optical properties of nanocrystalline TiO2 thin films synthesized by sol–gel dip coating method

2020 ◽  
Vol 23 ◽  
pp. 68-72
Author(s):  
Kutraleeswaran Manickam ◽  
Venkatachalam Muthusamy ◽  
Saroja Manickam ◽  
T.S. Senthil ◽  
Gowthaman Periyasamy ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Tio2 Thin Films ◽  
Nanocrystalline Tio2 ◽  
Coating Method ◽  
Dip Coating Method

Optical Properties of Nanostructured Sol–Gel Thin Films Doped with Fe2O3 and Their Ferromagnetic Characterization by Mössbauer Spectroscopy

2008 ◽  
Vol 8 (12) ◽  
pp. 6491-6496
Author(s):  
Jorge Garcia-Macedo ◽  
Guadalupe Valverde-Aguilar ◽  
Raúl W. Gómez ◽  
José L. Pérez-Mazariego ◽  
Vivianne Marquina
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Coating Method ◽  
Dip Coating Method

Sol–gel thin films containing Fe2O3 were deposited onto glass substrates by the dip-coating method at room temperature. Fe2O3 enriched with the isotope 57Fe was embedded in two kinds of matrices: zinc oxide (ZnO) and silica (SiO2). X-ray diffraction (XRD) was used for morphology and structure determination of the nanostructures and showed that the ZnO exhibit a wurtzite form when the film is annealed at 450 °C for 20 min. SiO2 thin films at C16H33PEO20:Fe2O3 = 1:2.7 × 10−1 molar concentration exhibit a hexagonal nanophase produced by the diblock copolymer Brij58 (C16H33PEO20). Optical absorption and infrared spectroscopy techniques were used to evaluate the optical quality of the films. In order to determine if the Fe2O3 was incorporated into the matrices, room temperature Mössbauer spectra of both samples were obtained. In both cases the hematite spectrum was obtained, corroborating that the incorporation of the Fe2O3 to the matrices was done without chemical reaction whatsoever.

Room Temperature Photoluminescence of TiO2 Thin Films Doped with Tb

2001 ◽  
Vol 15 (17n19) ◽  
pp. 813-816 ◽  
Author(s):  
A. Conde-Gallardo ◽  
M. García-Rocha ◽  
I. Hernández Calderón ◽  
R. Palomino-Merino
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Sol Gel ◽  
Broad Band ◽  
Dip Coating ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Novel Host ◽  
Coating Method ◽  
Dip Coating Method

Results on the fabrication and characterisation of thin films of the novel host, titania ( TiO 2), for the Tb 3+ activator ion are reported. The titania films were produced by the sol-gel process at room temperature using the dip coating method and deposited on silicon and corning glass substrates. It is shown that a different surface morphology is developed for the TiO 2:Tb films deposited on different substrates. When enough amount of Tb is incorporated and, a He-Cd 325 nm photoexcitation is used as excitation line, the films show green photoluminescence (PL) signal associated with the 5 D 4→7 F j transition of the electronic structure of Tb 3+ plus an broad band due to matrix's defects. The PL emission has better characteristics for the films deposited on silicon wafers.

A Convenient Method for Synthesis of Nano-Titania Thin Films from Aqueous TiO2 Precursor Sols

2011 ◽  
Vol 694 ◽  
pp. 466-470
Author(s):  
Wen Dong Liang ◽  
Xian Kun Wang ◽  
Yong Ping Yang
Keyword(s):  
Thin Films ◽  
Volume Ratio ◽  
Dip Coating ◽  
Preparation Condition ◽  
Mixed Solution ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Alcohol Water ◽  
Coating Method ◽  
Dip Coating Method

Anatase TiO2 thin films were prepared on glass substrates by dip-coating method with TiCl4 as the Ti precursor hydrolysis in a mixed solvent of alcohol and water. The effects of preparation parameters such as the alcohol species, the alcohol/water (A/W) ratio, and the dosage of TiCl4 (the volume ratio of TiCl4 and mixed solution) were investigated. The best preparation condition was optimized that with the isopropanol / H2O volume ratio of 65:35, the dosage of TiCl4 at 3%. XRD, SEM, TEM and UV–Vis photospectroscopy were used to analyze the characteristics of the solution and films. The films have a high hydrophilicity after illuminating with ultraviolet light, it have a good adherence and can be used as an efficient photocatalyst.

Characterization of Iron Oxide Nanoparticles for Sol-Gel Dip-Coating Method Prepared Thin Films

2013 ◽  
Vol 704 ◽  
pp. 275-280
Author(s):  
Janina Setina ◽  
Alona Gabrene ◽  
Inna Juhnevica ◽  
Gundars Mezinskis
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Iron Oxides ◽  
Sol Gel ◽  
Morphological Characteristics ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Coating Method ◽  
Dip Coating Method ◽  
Dip Coating Technique

The paper describes two methods of syntheses of iron oxides, microstructure and morphology of magnetite nanoparticles. Nanocomposite thin films of SiO2/Fe3O4 have been prepared with sol-gel dip coating technique: dip-coating from SiO2/Fe3O4 sol and encapsulation magnetite between two SiO2 layers. Structural and morphological characteristics of iron oxides particles and prepared film were analyzed by X-Ray Diffraction, SEM, FTIR, DTA, AFM. AFM topography of surface and measurements of roughness has shown that using iron oxide encapsulation between two SiO2 layers to provide the even distribution of iron oxide, results as high quality films with low Rq values 1.5 2.7 nm.

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