Acoustic scattering characteristic depend on length and swimming angle of scorpion fish (Sebasiscus marmoratus) based on ex-situ method

2016 ◽  
Vol 9 (1) ◽  
pp. 1
Author(s):  
Yu-Geun JI ◽  
Kyu-Kyeong SHIM ◽  
Keon-Woo SONG ◽  
Eun-A YOON ◽  
Doo-Jin HWANG
Keyword(s):  
Acoustic Scattering ◽  
Ex Situ ◽  
Scorpion Fish ◽  
Scattering Characteristic

scholarly journals Measurements of acoustic-scattering spectra from the whole and parts of Atlantic mackerel

2009 ◽  
Vol 66 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
Tonje Lexau Nesse ◽  
Halvor Hobæk ◽  
Rolf J. Korneliussen
Keyword(s):  
Frequency Response ◽  
Acoustic Scattering ◽  
Ex Situ ◽  
Target Strength ◽  
Model Parameters ◽  
Acoustic Frequency ◽  
Atlantic Mackerel ◽  
Scattering Spectra ◽  
Laboratory Tank

Abstract Nesse, T. L., Hobæk, H., and Korneliussen, R. J. 2009. Measurements of acoustic-scattering spectra from the whole and parts of Atlantic mackerel. – ICES Journal of Marine Science, 66: 1169–1175. Atlantic mackerel (Scomber scombrus) are weak sound scatterers compared with fish that have swimbladders. Accurate acoustic estimates of mackerel abundance require estimates of target strength. Different parts of mackerel may dominate the backscattering spectra. Mackerel schools are acoustically recognized mainly by backscatter four times stronger at 200 kHz than at 38 kHz. Simulations have established that backscatter from only the flesh and the backbone could explain this frequency response, although there are uncertainties in the model parameters and simplifications. In this paper, experiments conducted in a laboratory tank to investigate the complexity of mackerel backscatter are discussed. Acoustic backscatter was measured over the frequency range 65–470 kHz from individual dead mackerel, and their backbones, heads, and skulls. Backscatter from the backbones was measured at several angles of incidence. Grating lobes (Bragg scattering) appeared at different angles, depending on the acoustic frequency and the spacing of the vertebrae. These lobes were evident in backbone backscatter after propagating through the flesh and can be used, in principle, to determine mackerel size acoustically. The frequency response of individual, ex situ Atlantic mackerel estimated from these measurements did not match that from the measurements of in situ mackerel schools. Further investigation is warranted.

Acoustic scattering characteristic of the greenling (Hexagrammos otakii)

2017 ◽  
Vol 10 (1) ◽  
pp. 1-5
Author(s):  
Siyoung YANG ◽  
So-hui YUN ◽  
Eun-a YOON ◽  
Doojin HWANG
Keyword(s):  
Acoustic Scattering ◽  
Scattering Characteristic ◽  
Hexagrammos Otakii

scholarly journals Estimates of acoustic target strength for giant jellyfish Nemopilema nomurai Kishinouye in the coastal Northwest Pacific

2013 ◽  
Vol 71 (3) ◽  
pp. 597-603 ◽  
Author(s):  
Donhyug Kang ◽  
Jusam Park ◽  
Seom-Kyu Jung ◽  
Sungho Cho
Keyword(s):  
Acoustic Scattering ◽  
Ex Situ ◽  
Target Strength ◽  
Northwest Pacific ◽  
Bell Diameter ◽  
Least Squares Regression ◽  
Acoustic Measurements ◽  
Nemopilema Nomurai ◽  
Acoustic Target ◽  
Giant Jellyfish

Abstract Acoustic target strength (TS) measurements were made of ex situ giant jellyfish Nemopilema nomurai Kishinouye at 38 and 120 kHz. These TS data may be useful for developing acoustic scattering models, and surveying giant jellyfish distributions and biomasses. Each jellyfish was tethered in seawater using a monofilament line that vertically penetrated its bell's centre. During the acoustic measurements, an underwater video camera was used to continuously monitor the jellyfish's behaviour. Acoustic measurements were made using split-beam transducers. TS measurements were made of 27 individual jellyfish, but data were analysed for 23 specimens (bell diameter in air, Dair = 21–65 cm) at 38 kHz, and 19 specimens (Dair = 21–46 cm) at 120 kHz, respectively. Least-squares regression fits of TS vs. log(Dair) were TS38kHz = 20•log10Dair–82.7 (r = 0.76) and TS120kHz = 20•log10Dair–86.7 (r = 0.79). The mean TS values at 38 and 120 kHz, using the average Dair = 40.3 cm and 35.5 cm, respectively, were −50.6 and −55.7 dB. The reduced TS, a function of the ratio of Dair to wavelength (λ), was RTS(Dair/λ) = −6.1•log10(Dair/λ) –36.1 (r = 0.51). These RTS values decreased with increasing Dair/λ. Symbiotic medusa shrimp (Latreutes anoplonyx Kemp) contributed negligible bias to our TS measurements of giant jellyfish. These ex situ TS measurements may be used in acoustic surveys to estimate the distributions and biomasses of N. nomurai.

scholarly journals Acoustic scattering properties of juvenile jack mackerel Trachurus japonicus based on a scattering model and ex situ target strength measurements

2013 ◽  
Vol 79 (3) ◽  
pp. 345-354 ◽  
Author(s):  
TAKESHI NAKAMURA ◽  
AKIRA HAMANO ◽  
KOKI ABE ◽  
HIROKI YASUMA ◽  
KAZUSHI MIYASHITA
Keyword(s):  
Acoustic Scattering ◽  
Ex Situ ◽  
Target Strength ◽  
Jack Mackerel ◽  
Trachurus Japonicus ◽  
Scattering Model

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Interfacial properties of GaSb/InAs superlattices

1993 ◽  
Vol 51 ◽  
pp. 826-827
Author(s):  
M. E. Twigg ◽  
B. R. Bennett ◽  
J. R. Waterman ◽  
J. L. Davis ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Molecular Beam ◽  
Infrared Detector ◽  
Interfacial Properties ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Absorption Coefficients ◽  
X Ray ◽  
Short Period ◽  
High Optical Absorption

Recently, the GaSb/InAs superlattice system has received renewed attention. The interest stems from a model demonstrating that short period Ga1-xInxSb/InAs superlattices will have both a band gap less than 100 meV and high optical absorption coefficients, principal requirements for infrared detector applications. Because this superlattice system contains two species of cations and anions, it is possible to prepare either InSb-like or GaAs-like interfaces. As such, the system presents a unique opportunity to examine interfacial properties.We used molecular beam epitaxy (MBE) to prepare an extensive set of GaSb/InAs superlattices grown on an GaSb buffer, which, in turn had been grown on a (100) GaAs substrate. Through appropriate shutter sequences, the interfaces were directed to assume either an InSb-like or GaAs-like character. These superlattices were then studied with a variety of ex-situ probes such as x-ray diffraction and Raman spectroscopy. These probes confirmed that, indeed, predominantly InSb-like and GaAs-like interfaces had been achieved.

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