scholarly journals Application of Thermal-Chemical-Vapor-Deposition Films to Passivation Films and Interlayer Insulation Films for Organic Light-Emitting-Diodes

1998 ◽  
Vol 118 (12) ◽  
pp. 1418-1424
Author(s):  
Koichi Yamashita ◽  
Tatsuo Mori ◽  
Teruyoshi Mizutani
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Thermal Chemical Vapor Deposition ◽  
Organic Light

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

scholarly journals Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Sheng-Po Chang ◽  
Ting-Hao Chang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Zno Nanowire ◽  
Light Emitting ◽  
Thermal Chemical Vapor Deposition ◽  
Current Voltage ◽  
Vertically Aligned ◽  
Current Voltage Characteristics

The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.

Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

2009 ◽  
Vol 94 (22) ◽  
pp. 222105 ◽  
Author(s):  
William E. Fenwick ◽  
Andrew Melton ◽  
Tianming Xu ◽  
Nola Li ◽  
Christopher Summers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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