Photodosimeter Badge System

PEDIATRICS ◽  
1985 ◽  
Vol 75 (2) ◽  
pp. 437-441
Author(s):  
Peter C. Scheidt ◽  
Phyllis M. Sternthal ◽  
Robert Anderson ◽  
Robert Studholme ◽  
Dolores A. Bryla ◽  
...  

The Committee on Phototherapy in the Newborn of the National Academy of Sciences has recommended10 development of a compact system to continuously measure radiant energy exposure of infants treated with phototherapy. A small bilirubinimpregnated photodosimeter film badge was developed by the Beckman Instrument Company for this purpose and was used during the National Institute of Child Health and Human Development (NICHD) phototherapy study. This report summarizes the results of data obtained with this measurement device and briefly describes the performance of this system. METHODS The film badge dosimeter system consists of a 5.2x2.6-cm plastic badge composed of an imbedded disk of bilirubin cast in a polymeric substrate and sandwiched between two layers of clear plastic. Before exposure to light, the badge exhibits a high optical density at 460 nm due to a relatively high concentration of bilirubin. The optical density of the badge at 400 to 500 nm decreases as a function of the total dose of light within the action spectrum for the photodecomposition of bilirubin to which the badge has been exposed. Initial optical density at 460 nm is measured by a densitometer designed and dedicated specifically for this purpose. After exposure, the optical density is again measured by insertion into the densitometer; the total dosage, which is the time-integrated irradiance received by the badge during the photodecomposition process, is derived from the difference in optical density between the two readings. (A description of the calibration of the badge is available on request from Biometry Branch, Epidemiology and Biometry Research Program, National Institute of Child Health and Human Development, Bethesda, Maryland.)

Author(s):  
V. V. Gritsenko

The aim is to find out the peculiarities of the phenology of the rare endemic species Gymnospermium odessanum (DC.) Takht. in the conditions of introduction on the botanical-geographical plot “Steppes of Ukraine” of the M. M. Gryshko National Botanical Garden, National Academy of Sciences of Ukraine in 2021. Methods — field stationary and cameral. It is established that the vegetation period of G. odessanum in 2021 lasted from March 24 to May 22 and amounted to 60 days. 10 phenological phases are singled out and characterized: 1) the beginning of vegetation and budding, 2) mass budding and beginning of flowering, 3) mass flowering and completion of budding, 4) flowering peak, 5) mass flowering and the beginning of fruit formation, 6) completion of flowering and mass fruit formation, 7) fruit growth, 8) fruit opening, 9) ripening of seeds in open capsules, 10) dissemination and completion of the vegetation. It was found that during the mass formation of fruits, a significant number of fruits stopped their growth and development and did not form seeds in the future. This could be due to the night frosts on the eve or the difference in the conditions of the region of introduction from the natural habitats of the species. Budding and flowering (in total) account for a smaller part (30%) of the vegetation period. Most (70%) of the vegetation period is associated with fruits and seeds. A significant proportion of the vegetation period is the phenophase of ripening of seeds in open capsules (27%).


Author(s):  
R.A. Herring

Rapid thermal annealing (RTA) of ion-implanted Si is important for device fabrication. The defect structures of 2.5, 4.0, and 6.0 MeV As-implanted silicon irradiated to fluences of 2E14, 4E14, and 6E14, respectively, have been analyzed by electron diffraction both before and after RTA at 1100°C for 10 seconds. At such high fluences and energies the implanted As ions change the Si from crystalline to amorphous. Three distinct amorphous regions emerge due to the three implantation energies used (Fig. 1). The amorphous regions are separated from each other by crystalline Si (marked L1, L2, and L3 in Fig. 1) which contains a high concentration of small defect clusters. The small defect clusters were similar to what had been determined earlier as being amorphous zones since their contrast was principally of the structure-factor type that arises due to the difference in extinction distance between the matrix and damage regions.


1996 ◽  
pp. 4-15
Author(s):  
S. Golovaschenko ◽  
Petro Kosuha

The report is based on the first results of the study "The History of the Evangelical Christians-Baptists in Ukraine", carried out in 1994-1996 by the joint efforts of the Department of Religious Studies at the Institute of Philosophy of the National Academy of Sciences of Ukraine and the Odessa Theological Seminary of Evangelical Christian Baptists. A large-scale description and research of archival sources on the history of evangelical movements in our country gave the first experience of fruitful cooperation between secular and church researchers.


1996 ◽  
pp. 45-46
Author(s):  
Borys Lobovyk

"PHENOMENON OF RELIGION" - under this name on June 20-21, 1996, the All-Ukrainian Colloquium, convened by the Department of Religious Studies and the Ukrainian Association of Religious Studies took place at the Institute of Philosophy of the National Academy of Sciences of Ukraine. The purpose of the colloquium is to discuss the topical issues of Ukrainian religious studies concerning the nature, essence and functionality of religion as a social and historical phenomenon.


1998 ◽  
pp. 39-41
Author(s):  
Oleksandr N. Sagan

On April 22, 1998, on the occasion of the 65th anniversary of the publication of Arsen Rychinsky's "Problems of Ukrainian Religious Consciousness" in Kremenets (Ternopil region), the First Rychinsky reading was held. The organizers of the conference were: Ukrainian Association of Religious Studies, Ternopil Medical Academy named after them. I.Gorbachevsky, Department of Religious Studies at the Institute of Philosophy named after G.S. Skovoroda, National Academy of Sciences of Ukraine, Kremenets Medical College.


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