Highly Sensitive Organic Photoconductor Using Boron Sub-2,3-naphthalocyanine as a Red-sensitive Film for Stack-type Image Sensors

MRS Advances ◽  
2015 ◽  
Vol 1 (7) ◽  
pp. 459-464 ◽  
Author(s):  
Toshikatsu Sakai ◽  
Hokuto Seo ◽  
Tomomi Takagi ◽  
Hiroshi Ohtake

ABSTRACTBoron sub-2,3-naphthalocyanine chloride (SubNc) was investigated as a potential red-sensitive organic photoconductive film (OPF). A photoconductive cell was fabricated, and its current–voltage characteristics, both with and without light irradiation, and external quantum efficiency (EQE) were determined. The structure of the photoconductive cell was as follows, with thicknesses in nm given in parentheses: glass substrate/In–Zn–O (100)/spiro-2CBP (30)/SubNc (50)/Alq3 (30)/Al (50) (spiro-2CBP = 2,7-bis(carbazol-9-yl)-9,9-spirobifluorene; Alq3 = tris(8-hydroxyquinolinato)aluminum). The spiro-2CBP and Alq3 layers were inserted between the SubNc layer and the electrodes to block dark current injection. The three organic layers were successively deposited by evaporation in a vacuum on the In–Zn–O-patterned substrate. SubNc film absorbed light in the red region well, with an absorption peak at 695 nm. The EQE of the cell reached 80% when the applied bias was 15 V. In addition, the blocking layers effectively suppressed dark current in the OPF, which corresponded to a current density of 20 nA/cm2 at 15 V. These results indicate that SubNc is a promising candidate as a red-sensitive OPF.

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
Elisabeth A. Duijnstee ◽  
Vincent M. Le Corre ◽  
Michael B. Johnston ◽  
L. Jan Anton Koster ◽  
Jongchul Lim ◽  
...  

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.


1998 ◽  
Vol 5 (3) ◽  
pp. 630-631 ◽  
Author(s):  
Togo Kudo ◽  
Hideki Aoyagi ◽  
Hideaki Shiwaku ◽  
Yoshiharu Sakurai ◽  
Hideo Kitamura

A sensitive current-measuring system is required to construct a highly sensitive X-ray beam-position monitor (XBPM). A current–voltage converter (I/V) which can measure currents between 0.1 nA and 10 mA was designed, and the signal processing system of the XBPM was constucted using this I/V. This system was used in beamline commissioning. Beam-position data standard deviations of σ ≃ 3 µm for the bending-magnet beamline, and σ x ≃ 3 µm and σ y ≃ 1 µm for the insertion-device beamline were obtained during the beamline commissioning.


2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.


2011 ◽  
Vol 694 ◽  
pp. 672-675
Author(s):  
Tao Li ◽  
Chun Lan Zhou ◽  
Zhen Gang Liu ◽  
Wen Jing Wang ◽  
Yang Song ◽  
...  

In this paper, the dark current-voltage characteristics of p-n junction of silicon solar cells are analysed, with different nickel film thicknesses of 200nm, 400nm and 600nm. The formation of nickel silicide is obtained after the thermal annealing process for 1min, 5min and 10min. The dark current-voltage curves obtained by three kinds of annealing temperature as a function of time are achieved in experiment. The improvement of series resistance extracted from the dark current-voltage curve in the upper voltage range is observed. The influence of nickel film thicknesses on dark current-voltage characteristics of silicon solar cells is confirmed.


2003 ◽  
Vol 251 (1-4) ◽  
pp. 782-786 ◽  
Author(s):  
X. Zhang ◽  
A.Z. Li ◽  
C. Lin ◽  
Y.L. Zheng ◽  
G.Y. Xu ◽  
...  

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