Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

scholarly journals A method of determining the parameters in systems with serialized Current-Voltage characteristics

2021 ◽  
Vol 2090 (1) ◽  
pp. 012077
Author(s):  
R.O. Ocaya ◽  
F. Yakuphanoğlu
Keyword(s):  
Ideality Factor ◽  
Empirical Data ◽  
Series Resistance ◽  
Measurement Data ◽  
The Other ◽  
Actual Measurement ◽  
Independent Variables ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract We propose a method of determining the parameters of systems with serialized characteristics, which may suggest the existence of symmetry in the system. The method is demonstrated in extracting the parameters of a metal-semiconductor in the presence of significant series resistance, which is itself important but limits the accuracy of the existing methods in the determination of the other calculated parameters such as barrier height and ideality factor. We show the steps involved in establishing whether symmetry exists, and show that some functional interrelations between the parameters and the independent variables can readily be established. We use actual measurement data from an experimental diode and show that the results outperform the popular Cheung-Cheung approach. This general approach, therefore, represents a significant advancement in the analysis of serialized empirical data.

scholarly journals Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
A. Karsenty ◽  
A. Chelly
Keyword(s):  
Room Temperature ◽  
Series Resistance ◽  
Electrical Characteristics ◽  
Saturation Current ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Channel Thickness ◽  
Current Voltage Characteristics ◽  
First Time

Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

scholarly journals KARAKTERISTIK RANGKAIAN EKIVALEN DIODA BLEND ORGANIK P3OT : PCBM

2017 ◽  
Vol 2 (2) ◽  
pp. 7-12
Author(s):  
Winda Setya
Keyword(s):  
Equivalent Circuit ◽  
Indium Tin Oxide ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Current Voltage Characteristic ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Organic Diode

Has conducted research diode characteristics equivalent circuit of the organic blend P3OT: PCBM.  In this study, the blend of P3OT:PCBM was sandwiched between a transparent indium tin oxide (ITO) electrode and an Al backside contact. The current-voltage characteristic of the diode was measured under the dark and illumination. In order to determine the electrical parameters of the diode, we employed an equivalent circuit model developed originally for inorganic diode. As a result, the series resistance decreases while the reverse saturation current density increases by decreasing the thickness of P3OT:PCBM layer. This result may be useful for improving the performance of developing organic diode.

Modification of current-voltage characteristics of planar organic systems by nm-thick copper phthalocyanine or perylene dye interlayer

Open Physics ◽  
2013 ◽  
Vol 11 (2) ◽  
Author(s):  
Ryszard Signerski ◽  
Grażyna Jarosz
Keyword(s):  
Dark Current ◽  
Copper Phthalocyanine ◽  
Photovoltaic Effect ◽  
Saturation Current ◽  
Strong Reduction ◽  
Organic Systems ◽  
Voltage Polarity ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Perylene Dye

AbstractThe effect of a nm-thick interlayer of copper phthalocyanine (CuPc) or perylene dye (MePTCDI) on currentvoltage characteristics of planar organic systems is discussed in this work. The MePTCDI layer in the ITO/MePTCDI/CuPc/Au system strongly reduces reverse dark current by blocking injection of holes from ITOinto CuPc leading to high values of rectification ratio. The CuPc interlayer in the ITO/CuPc/MePTCDI/Ag system causes a strong reduction in electron injection from ITOand reverses a forward polarity. Modification of current-voltage characteristics of illuminated systems with an interlayer of MePTCDI or CuPc is associated with a strong photovoltaic effect. This results from efficient excition dissociation at the CuPc/MePTCDI interface. Saturation current, determined by this process of charge carrier photogeneration, can be observed at particular voltage polarity.

Diode Parameters of Mesa Structural n-Type Nanocrystalline FeSi2/p-Type Si Heterojunctions Prepared by Lift-Off Photolithography

2015 ◽  
Vol 1103 ◽  
pp. 91-96
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Ryūhei Iwasaki ◽  
Mahmoud Shaban ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Low Temperatures ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Lift Off ◽  
P Type ◽  
Photolithography Process

Mesa structural n-type nanocrystalline-FeSi2/p-type Si heterojunctions were successfully fabricated by a lift-off technique combined with a photolithography process. Their current-voltage characteristics were measured at low temperatures range from 300 K down to 60 K. We estimated their diode parameters such as ideality factor, barrier height and series resistance based on the thermionic emission theory and Cheung’s method. From the estimation by the thermionic emission theory, the obtained results show an increase of ideality factor and a decrease of barrier height at low temperatures. The estimation by Cheung’s method shows that the values of ideality factor and barrier height are in agreement with those obtained from the thermionic emission theory. The obtained series resistances from dV/d (lnJ)-J and H(J)-J plots, which are approximately equal to each others, are increased at low temperatures.

THE ELECTRICAL CHARACTERIZATION OF Ag/N-BuHHPDI/p-Si HETEROJUNCTION BY CURRENT–VOLTAGE CHARACTERISTICS

2013 ◽  
Vol 27 (11) ◽  
pp. 1350080 ◽  
Author(s):  
MUHAMMAD TAHIR ◽  
MUHAMMAD HASSAN SAYYAD ◽  
FAZAL WAHAB ◽  
DIL NAWAZ KHAN
Keyword(s):  
Series Resistance ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Heterojunction Diode ◽  
Shunt Resistance ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Good Agreement

This paper reports the fabrication of Ag / N - BuHHPDI /p- Si heterojunction diode by evaporating a layer of organic compound N-Butyl-N'-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylicacid-diimide (N-BuHHPDI) on top of the p- Si . The electronic properties of the heterojunction have been studied, in dark at a temperature of 300 K, by conventional current–voltage (I–V) method, Norde's method and Cheung's technique. By analyzing conventional I–V characteristics, the device exhibited rectifying behavior with a rectification ratio of 62.67 at ± 5.8 V. From the forward biased I–V measurements, the barrier height and ideality factor values of 0.83 eV and 6.4, respectively, have been obtained. Different diode parameters such as series resistance, shunt resistance, reverse saturation current and turn on voltage have been extracted from the I–V measurements. The parameters calculated from Norde's and Cheung's methods are found to be in good agreement with those calculated from conventional I–V measurements. Morphology of the N-BuHHPDI film is investigated using atomic force microscope (AFM).

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