Effects of nitrogen impurity on zno crystal growth on Si substrates

MRS Advances ◽  
2019 ◽  
Vol 4 (27) ◽  
pp. 1557-1563
Author(s):  
Soichiro Muraoka ◽  
Lyu Jiahao ◽  
Daisuke Yamashita ◽  
Kunihiro Kamataki ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Smooth Surface ◽  
Buffer Layers ◽  
Zno Films ◽  
Secondary Nucleation ◽  
Rocking Curve ◽  
Si Substrates ◽  
Nitrogen Impurity ◽  
Adsorbed Nitrogen ◽  
Zno Crystal

ABSTRACTEffects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers

2009 ◽  
Vol 94 (12) ◽  
pp. 122107 ◽  
Author(s):  
W. Guo ◽  
M. B. Katz ◽  
C. T. Nelson ◽  
T. Heeg ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Zno Films ◽  
Si Substrates

Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 567-570
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Young Joon Cho ◽  
Hyoun Woo Kim ◽  
Jae Gab Lee
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Films ◽  
Zno Thin Film ◽  
Zno Film ◽  
Amorphous Sio2 ◽  
Si Substrates

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

2002 ◽  
Vol 243 (3-4) ◽  
pp. 439-443 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Dali Liu ◽  
Xinqiang Wang ◽  
Yan Ma ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Zno Films ◽  
Si Substrates

Structure and properties of ZnO films grown on Si substrates with low temperature buffer layers

2006 ◽  
Vol 253 (5) ◽  
pp. 2765-2769 ◽  
Author(s):  
Wei Zheng ◽  
Yuan Liao ◽  
Li Li ◽  
Qingxuan Yu ◽  
Guanzhong Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layers ◽  
Zno Films ◽  
Structure And Properties ◽  
Si Substrates

Effect of Buffer Thickness on the Formation of ZnO Nanorods Grown by MOCVD

2007 ◽  
Vol 124-126 ◽  
pp. 101-104
Author(s):  
Dong Chan Kim ◽  
Bo Hyun Kong ◽  
Young Yi Kim ◽  
Hyung Koun Cho ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Large Scale ◽  
Zno Nanorods ◽  
Wide Band ◽  
Buffer Layers ◽  
Zno Films ◽  
Wide Band Gap ◽  
Si Substrates ◽  
Potential Applications ◽  
Zno Buffer Layer ◽  
Zno Semiconductor

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at 400 °C and their effect on the formation of ZnO nanorods at 300 °C was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

1998 ◽  
Vol 541 ◽  
Author(s):  
Shogo Imada ◽  
Shigeto Shouriki ◽  
Eisuke Tokumitsu ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Ferroelectric Properties ◽  
High Energy ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Si Substrates

AbstractA ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

Substrate Engineering with Fluoride Buffer Layers on Si

1991 ◽  
Vol 220 ◽  
Author(s):  
A. P. Taylor ◽  
W. Li ◽  
Q.-F. Xiao ◽  
L. J. Schowalter
Keyword(s):  
High Temperature ◽  
Smooth Surface ◽  
Compound Semiconductors ◽  
Buffer Layers ◽  
Si Substrates ◽  
Substrate Engineering ◽  
Growth Method ◽  
Temperature Deposition ◽  
Step Growth ◽  
Surface Morphologies

ABSTRACTHere, we report on our efforts to engineer Si substrates for growth of compound semiconductors through the use of suitable epitaxial buffer layers of CaF2, SrF2, and BaF2 using a recently installed dual growth chamber MBE system. We have also developed new graphite-heater K-cells which have demonstrated reliable, high temperature deposition of the fluorides with excellent uniformity across substrates up to 6 inches in diameter. Excellent epitaxial quality (Xmin<5.0%) and smooth surface morphologies have been achieved for epitaxial CaF2 and SrF2 grown directly on Si (111) and BaF2 grown directly on Si (001). The BaF2 is (111) oriented on the Si (001) substrates with one of the {110} planes of the BaF2 aligned with the (110) plane in the Si (001). PbS1−xSex of excellent epitaxial quality has recently been demonstrated on the BaF2 (111)/Si (001) films. Comparable epitaxial quality has been demonstrated for CaF2 grown on Si (001) substrates using a two step growth method. We also report on preliminary results on epitaxial mixed fluoride growth on Si (111) and Si (001) substrates.

Sign in / Sign up

Export Citation Format

Share Document