Substrate Engineering with Fluoride Buffer Layers on Si

1991 ◽  
Vol 220 ◽  
Author(s):  
A. P. Taylor ◽  
W. Li ◽  
Q.-F. Xiao ◽  
L. J. Schowalter
Keyword(s):  
High Temperature ◽  
Smooth Surface ◽  
Compound Semiconductors ◽  
Buffer Layers ◽  
Si Substrates ◽  
Substrate Engineering ◽  
Growth Method ◽  
Temperature Deposition ◽  
Step Growth ◽  
Surface Morphologies

ABSTRACTHere, we report on our efforts to engineer Si substrates for growth of compound semiconductors through the use of suitable epitaxial buffer layers of CaF2, SrF2, and BaF2 using a recently installed dual growth chamber MBE system. We have also developed new graphite-heater K-cells which have demonstrated reliable, high temperature deposition of the fluorides with excellent uniformity across substrates up to 6 inches in diameter. Excellent epitaxial quality (Xmin<5.0%) and smooth surface morphologies have been achieved for epitaxial CaF2 and SrF2 grown directly on Si (111) and BaF2 grown directly on Si (001). The BaF2 is (111) oriented on the Si (001) substrates with one of the {110} planes of the BaF2 aligned with the (110) plane in the Si (001). PbS1−xSex of excellent epitaxial quality has recently been demonstrated on the BaF2 (111)/Si (001) films. Comparable epitaxial quality has been demonstrated for CaF2 grown on Si (001) substrates using a two step growth method. We also report on preliminary results on epitaxial mixed fluoride growth on Si (111) and Si (001) substrates.

Epitaxial Relationships and Electrical Properties of SrTiO3 Films on Various Thin -Fluoride/Si Structures

1994 ◽  
Vol 341 ◽  
Author(s):  
B. K. Moon ◽  
H. Ishiwara
Keyword(s):  
Buffer Layer ◽  
Buffer Layers ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Initial Stage ◽  
Growth Method ◽  
Step Growth

AbstractCrystalline strontium titanate (SrTiO3:STO) films were grown on Si(111) and Si(100) substrates using thin SrF2 and CaF2 buffer layers by two-step growth method. In all cases, fluoride buffer layers were effective in growing STO films on Si substrates, which is probably due to that fluoride buffer layers have excellent crystallinity and they can prevent formation of amorphous SiO2 layers on Si substrates at the initial stage of the STO deposition. It was found from X-ray diffraction and pole-figure measurements that (110)-oriented STO crystallites with three different positions to the substrate were grown on Si(111) substrates for both SrF2 and CaF2 buffer layers. In constrast, (100)-oriented STO films with 12-fold symmetry were grown on a SrF2/Si(100), and mixed (110)- and (100)-oriented STO crystallites were grown on a CaF2/Si(100) structure. It was concluded from these results that better crystallinity of STO films can be obtained on the SrF2 buffer layer in case of Si(111) and on the CaF2 buffer layer in case of Si(100). It was also found from I-V and C-V analyses that the STO films have good insulating and dielectric characteristics. For a SrTiO3 film on SrF2/Si(111) structure, the best values of breakdown field (at l.μA/cm2), resistivity (at IMV/cm) and dielectric constant were 2.3MV/cm, 8.2 × 1012 Ωcm and 72, respectively.

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Initial Buffer Layers on the Growth of InGaP on Si by MBE

1996 ◽  
Vol 441 ◽  
Author(s):  
H. Kawanami ◽  
S. Ghosh ◽  
I. Sakata ◽  
T. Sekigawa
Keyword(s):  
High Temperature ◽  
Surface Structure ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Single Domain ◽  
Buffer Layers ◽  
Structure Control ◽  
Si Substrates ◽  
Direct Growth ◽  
Initial Buffer

AbstractSingle domain InxGa(1-x)P (x=0.3) films were successfully grown on Si(001) misoriented substrates by molecular beam epitaxy with a solid phosphorous source. The effects of interfacial buffer layers such as InGaP (i.e. direct growth without buffer layer), GaP, AlP, and GaAs were examined. Also a Si epitaxial buffer layer was tried to control the Si surface structure. Mirror like surfaces were obtained for all films with RHEED patterns of (2×1) single domain surface structure. PL intensities for all films indicated almost the same values except for the films with a Si epitaxial buffer layer. The films with a Si epitaxial buffer layer had almost three times larger PL intensities than the films without Si epitaxial buffer layer. The results suggest incomplete cleaning of the Si surface by the high temperature (1000 °C) treatment and possibility of surface structure control for Si substrates by a Si epitaxial buffer layer.

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

2014 ◽  
Vol 778-780 ◽  
pp. 167-170 ◽  
Author(s):  
Yoichiro Mitani ◽  
Nobuyuki Tomita ◽  
Kenichi Hamano ◽  
Masayoshi Tarutani ◽  
Takanori Tanaka ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
High Quality ◽  
Sic Particles ◽  
Before And After ◽  
Growth Method ◽  
Step Growth ◽  
Micrometer Scale

A new growth method for considerably suppressing generation of carrot and triangle defects is presented. Based on the investigation for the surfaces before and after the epitaxial growth, it becomes clear that those defects were results from micrometer-scale SiC particles. For removing the particles, pre-flow of H2 at high temperature before the growth was very effective. The density of those defects strongly depends on the condition of the pre-flow and especially decreased at Tp=1575°C and tp=180 sec.

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

Direct Heteroepitaxial Growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) Substrates by MBE

1993 ◽  
Vol 302 ◽  
Author(s):  
T. J. de Lyon ◽  
S. M. Johnson ◽  
C. A. Cockrum ◽  
O. K. Wu ◽  
J. A. Roth
Keyword(s):  
Epitaxial Films ◽  
Buffer Layers ◽  
Structural Quality ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Composite Substrates ◽  
Surface Morphologies ◽  
Spectroscopy Optical

ABSTRACTEpitaxial films of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0-8 degrees towards the [011] direction. The films were characterized with x ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Through use of ZnTe buffer layers, single crystal CdZnTe(100) films have been demonstrated on both 4° and 8° misoriented Si with structural quality comparable to that obtained with GaAs/Si composite substrates. X ray rocking curves for ZnTe(400) with FWHM less than 300 arcseconds and for CdZnTe(400) with FWHM less than 160 arcseconds have been obtained for as-grown films. The observed surface morphologies are superior to those obtained on GaAs/Si composite substrates. HgCdTe(100) films with x ray FWHM as low as 55 arcseconds and average etch pit densities of 5 x 106 cm−2 have been deposited by liquid phase epitaxy on these MBE CdZnTe/ZnTe/Si substrates.

Phase Transition and Formation of TiSi2 Codeposited on Atomically Clean Si(111).

1993 ◽  
Vol 311 ◽  
Author(s):  
Hyeongtag Jeon ◽  
Y. S. Cho ◽  
E. Y. Kang ◽  
J. W. Park ◽  
R.R. Nemanich
Keyword(s):  
Phase Transition ◽  
Phase Transformation ◽  
High Temperature ◽  
Rough Surface ◽  
Smooth Surface ◽  
Elevated Temperatures ◽  
Titanium Silicide ◽  
Surface And Interface ◽  
Si Substrates ◽  
Si Films

ABSTRACTIn this study, the phase transformation and the surface and interface morphologies of TiSi2 formed on atomically clean Si substrates are investigated. 200Å Ti and 400A Si films on Si(111) have been co-deposited at elevated temperatures (400°C - 800°C) in ultrahigh vacuum. The phase transition of TiSi2 is characterized with using XRD. The results distinguish the formation of the C49 and C54 crystalline titanium silicides. The surface and interface morphologies of titanium silicides have been examined with SEM and TEM. A relatively smooth surface is observed for the C49 phase while a rough surface and interface are observed for the C54 phase. The islanding of the C54 phase becomes severe at high temperature (800°C). Islands of TiSi2 have been observed at temperatures above 700°C but no islands are observed at temperatures below 600°C. For films deposited at 400TC and 500°C, weak XRD peaks corresponding to TiSi were observed and TEM micrographs exhibited small crystalline regions of titanium silicide at the interface.

Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
S. J. Rosner ◽  
S. M. Koch ◽  
J. S. Harris
Keyword(s):  
Molecular Beam ◽  
Current Practice ◽  
State Of The Art ◽  
Compound Semiconductors ◽  
Nucleation Density ◽  
Si Substrates ◽  
The Past ◽  
Gaas On Si ◽  
Step Growth

ABSTRACTThe technology of heteroepitaxially growing compound semiconductors, particularly GaAs, on Si has attracted an increasing volume of attention in the past 3–5 years. In the past two years there have been few major advances in the growth recipes, which all include a high temperature Si preheat, a two-step growth temperature profile, and the use of misoriented substrates. The need for mechanistic understanding of the effect of these parameters is crucial to advancing the state of the art beyond this current practice. This work focusses on the effect of the misorientation in inducing asymmetry in early stages of the molecular beam epitaxy of GaAs on Si substrates. The strain in the films is found to have greatly different rates of relaxation in the plane of the film when measured in the two orthogonal <220> directions. This asymmetry persists to greater than 30 nm film thickness at 400°C. The nucleation morphology was also examined as a function of substrate misorientation. At low substrate tilts, nucleation density was sparse and there was not substantial ordering of the nuclei. As the tilt was increased, a distinct habit emerged where collections of nuclei were quite coherent along the steps for several 100 nm, with dimensions of the order of 10's of nm perpendicular to the steps. The density of steps with nuclei was also substantially less than that predicted by the widely accepted “array of double-height steps” used to explain the curious lack of anti-phase disorder in these films.

Effects of nitrogen impurity on zno crystal growth on Si substrates

MRS Advances ◽  
2019 ◽  
Vol 4 (27) ◽  
pp. 1557-1563
Author(s):  
Soichiro Muraoka ◽  
Lyu Jiahao ◽  
Daisuke Yamashita ◽  
Kunihiro Kamataki ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Smooth Surface ◽  
Buffer Layers ◽  
Zno Films ◽  
Secondary Nucleation ◽  
Rocking Curve ◽  
Si Substrates ◽  
Nitrogen Impurity ◽  
Adsorbed Nitrogen ◽  
Zno Crystal

ABSTRACTEffects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

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