Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions

2002 ◽  
Vol 243 (3-4) ◽  
pp. 439-443 ◽  
Author(s):  
Yuantao Zhang ◽  
Guotong Du ◽  
Dali Liu ◽  
Xinqiang Wang ◽  
Yan Ma ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Zno Films ◽  
Si Substrates

Effects of nitrogen impurity on zno crystal growth on Si substrates

MRS Advances ◽  
2019 ◽  
Vol 4 (27) ◽  
pp. 1557-1563
Author(s):  
Soichiro Muraoka ◽  
Lyu Jiahao ◽  
Daisuke Yamashita ◽  
Kunihiro Kamataki ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Smooth Surface ◽  
Buffer Layers ◽  
Zno Films ◽  
Secondary Nucleation ◽  
Rocking Curve ◽  
Si Substrates ◽  
Nitrogen Impurity ◽  
Adsorbed Nitrogen ◽  
Zno Crystal

ABSTRACTEffects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

scholarly journals Structural and optical properties of ZnO films obtained on mesoporous Si substrates by the method of HF magnetron sputtering

2020 ◽  
Vol 44 (1) ◽  
pp. 57-66
Author(s):  
Valeriy KIDALOV ◽  
Alena DYADENCHUK ◽  
Yuriy BACHERIKOV ◽  
Anton ZHUK ◽  
Tetyana GORBANIUK ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Zno Films ◽  
Structural And Optical Properties ◽  
Si Substrates

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

2013 ◽  
Vol 669 ◽  
pp. 181-184
Author(s):  
Nan Ding ◽  
Li Ming Xu ◽  
Bao Jia Wu ◽  
Guang Rui Gu
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Promising Candidate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Crystallite Structure

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

Microstructural investigation of ZnO films grown on (111) Si substrates by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 312 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Sang Mo Yang ◽  
Seok Kyu Han ◽  
Jae Wook Lee ◽  
Jung-Hyun Kim ◽  
Jae Goo Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Microstructural Investigation ◽  
Si Substrates

Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers

2009 ◽  
Vol 94 (12) ◽  
pp. 122107 ◽  
Author(s):  
W. Guo ◽  
M. B. Katz ◽  
C. T. Nelson ◽  
T. Heeg ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Zno Films ◽  
Si Substrates

GaAs/Ge Crystal Growth on Si and SiO2/Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Yoshiro Ohmachi ◽  
Yukinobu Shinoda ◽  
Satoshi Oku
Keyword(s):  
Crystal Growth ◽  
Interfacial Layer ◽  
Composite Layer ◽  
Antiphase Domain ◽  
Layer Growth ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Etch Pit ◽  
Thermal Etching ◽  
Homoepitaxial Layers

ABSTRACTAn approach to the composite layer growth of GaAs/Ge on Si(100) and insulator–coated Si(100) has been investigated. To overcome a problem of antiphase disorder of GaAs occurring along with epitaxial growth on Ge, thermal etching on Ge surfaces in hydrogen was introduced just prior to the growth. Antiphase–domain–free GaAs grown on a Ge(100) wafer exhibited mirror surfaces, photoluminescence characteristics comparable to those of homoepitaxial layers, and low etch–pit densities. The autodoping of Ge into GaAs induced a highly doped interfacial layer several thousand angstroms thick. The present study also involves heteroepitaxial growth of Ge on Si by vacuum deposition and Ge crystal growth on insulating layers over Si by LESS method.

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