Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.336-338.567 ◽

2007 ◽

Vol 336-338 ◽

pp. 567-570

Author(s):

Chong Mu Lee ◽

Anna Park ◽

Young Joon Cho ◽

Hyoun Woo Kim ◽

Jae Gab Lee

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Films ◽

Zno Thin Film ◽

Zno Film ◽

Amorphous Sio2 ◽

Si Substrates

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

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Structure and properties of ZnO films grown on Si substrates with low temperature buffer layers

Applied Surface Science ◽

10.1016/j.apsusc.2006.05.042 ◽

2006 ◽

Vol 253 (5) ◽

pp. 2765-2769 ◽

Cited By ~ 17

Author(s):

Wei Zheng ◽

Yuan Liao ◽

Li Li ◽

Qingxuan Yu ◽

Guanzhong Wang ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layers ◽

Zno Films ◽

Structure And Properties ◽

Si Substrates

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Effect of Buffer Thickness on the Formation of ZnO Nanorods Grown by MOCVD

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.101 ◽

2007 ◽

Vol 124-126 ◽

pp. 101-104

Author(s):

Dong Chan Kim ◽

Bo Hyun Kong ◽

Young Yi Kim ◽

Hyung Koun Cho ◽

Jeong Yong Lee ◽

...

Keyword(s):

Large Scale ◽

Zno Nanorods ◽

Wide Band ◽

Buffer Layers ◽

Zno Films ◽

Wide Band Gap ◽

Si Substrates ◽

Potential Applications ◽

Zno Buffer Layer ◽

Zno Semiconductor

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at 400 °C and their effect on the formation of ZnO nanorods at 300 °C was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

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Effects of nitrogen impurity on zno crystal growth on Si substrates

MRS Advances ◽

10.1557/adv.2019.28 ◽

2019 ◽

Vol 4 (27) ◽

pp. 1557-1563

Author(s):

Soichiro Muraoka ◽

Lyu Jiahao ◽

Daisuke Yamashita ◽

Kunihiro Kamataki ◽

Kazunori Koga ◽

...

Keyword(s):

Crystal Growth ◽

Smooth Surface ◽

Buffer Layers ◽

Zno Films ◽

Secondary Nucleation ◽

Rocking Curve ◽

Si Substrates ◽

Nitrogen Impurity ◽

Adsorbed Nitrogen ◽

Zno Crystal

ABSTRACTEffects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

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Effects of the Gas Atmosphere of ZnO Buffer Layers in the ZnO films grown on Si Substrates by RF Magnetron Sputtering

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2005.18.7.656 ◽

2005 ◽

Vol 18 (7) ◽

pp. 656-661

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Films ◽

Si Substrates ◽

Gas Atmosphere

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MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ZNO FILMS ON SILICON SUBSTRATE WITH ITO BUFFER LAYER

International Journal of Modern Physics B ◽

10.1142/s0217979209061597 ◽

2009 ◽

Vol 23 (06n07) ◽

pp. 1764-1770 ◽

Cited By ~ 2

Author(s):

C.-W. ZOU ◽

W. GAO

Keyword(s):

Mechanical Properties ◽

Buffer Layer ◽

Mechanical Performance ◽

Lattice Mismatch ◽

Buffer Layers ◽

Zno Films ◽

Si Substrates ◽

Microstructure And Mechanical Properties ◽

Deformation Behaviors ◽

Continuous Stiffness Measurement

ZnO thin films were prepared by an unbalanced magnetron sputter on silicon substrates and glass slides. An ITO layer was applied on Si substrate as a buffer layer. Microstructure and mechanical deformation behaviors of the ZnO films were investigated by XRD, SEM and nanoindentation methods. Results showed that ITO buffer layer plays an important role for ZnO heteroepitaxy growth on Si substrates. The strains at the interface induced by the lattice mismatch of Si and ZnO are repressed. As a result, ZnO films with the buffer layers showed larger grain size and better crystallinity. The hardness and modulus of ZnO films with buffer layer decreased. Continuous stiffness measurement (CSM) technique was also used to investigate the effects of buffer layer and substrate materials on the mechanical performance of the prepared ZnO films. The relationship between microstructure and mechanical properties of ZnO films are discussed based on the experimental results.

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Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

MRS Proceedings ◽

10.1557/proc-91-99 ◽

1987 ◽

Vol 91 ◽

Cited By ~ 9

Author(s):

N. El-Masry ◽

N. Hamaguchi ◽

J.C.L. Tarn ◽

N. Karam ◽

T.P. Humphreys ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Buffer Layers ◽

Threading Dislocations ◽

Defect Reduction ◽

Strained Layer ◽

Si Substrates ◽

Density Of Dislocations ◽

Strained Layer Superlattice ◽

Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

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