The observation of various grain boundary atomic structures in Au by high-resolution electron microscopy

1986 ◽  
Vol 1 (1) ◽  
pp. 47-59 ◽  
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Grain Orientations ◽  
Tilt Boundaries ◽  
Au Thin Films ◽  
Special Case

A number of grain boudary structures prepared from evaporated Au thin films have been investigated using very high-resolution electron microscopy. Particular emphasis has been placed on analyzing [110] tilt boundaries with both low- and high-angle misorientations. Observations of the atomic positions at dislocation cores and close-packed polyhedral shapes at the interface have been made. Symmetric boundaries have been observed as well as interfacial regions where the grain orientations deviate from perfect coincidence and hence the boundary structure exhibits perturbations to the regular polyhedron stacking. The special case of “plane coalescence” has also been observed, as well as the boundary splitting near a hole. The fabrication and observation of a generalized boundary, which cannot be classified as a tilt structure, will also be demonstrated.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

High Resolution Electron Microscopy and Computer Simulation Studies of the Atomic Structure of Tilt Boundaries in TiO2

1994 ◽  
Vol 357 ◽  
Author(s):  
Yaping Liu ◽  
Imtiaz Majid ◽  
John B. Vander Sande
Keyword(s):  
Electron Microscopy ◽  
Computer Simulation ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Symmetric Plane ◽  
Tilt Boundaries ◽  
Computer Simulation Studies ◽  
Simulated Images

AbstractThe atomic structure of [001] tilt grain boundaries of Σ25 (210), Σ5 (310), Σ213 (320) and Σ217 (410) in TiO2 (rutile) were studied using high resolution electron microscopy and computer simulation. Regularly separated small steps (1/2 [120] high) and big steps (3/2 [120] high) which contain secondary dislocations were found in the (210) boundary as a result of deviation from the exact Σ5 misorientation and (210) symmetric plane. Similar steps were also found in (310) and (320) boundaries. Flat segments between the steps were found to have very accurate misorientation of their, Σ's and a nearly symmetric boundary plane. Their rigid body translation, volume expansion and relaxed structures were determined by comparing HRTEM images with computer calculated structures and simulated images. An irregular core structure was found in the (410) boundary when its misorientation deviated 2° from the exact Σ17 misorientation.

Grain boundary structure in TiO2-excess barium titanate

1998 ◽  
Vol 13 (12) ◽  
pp. 3449-3452 ◽  
Author(s):  
Takahisa Yamamoto ◽  
Yuichi Ikuhara ◽  
Katsuro Hayashi ◽  
Taketo Sakuma
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
High Resolution Electron Microscopy ◽  
Growth Behavior ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Resolution Electron ◽  
Grain Growth Behavior ◽  
Electron Energy Loss

Grain boundary structure was examined in 0.1 mol% TiO2-excess BaTiO3 by high-resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Their grain boundaries were mostly faceted with {210} type habit. The faceted boundaries were characterized to be associated with an extra Ti–O2 bond with the rutile-like structure. The grain growth behavior in a small TiO2-excess BaTiO3 is discussed from the viewpoint of grain boundary structure.

Observations of grain boundary structure in submicrometer-grained Cu and Ni using high-resolution electron microscopy

1998 ◽  
Vol 13 (2) ◽  
pp. 446-450 ◽  
Author(s):  
Zenji Horita ◽  
David J. Smith ◽  
Minoru Nemoto ◽  
Ruslan Z. Valiev ◽  
Terence G. Langdon
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Nonequilibrium State ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Typical Feature ◽  
Boundary Structure ◽  
Grain Boundary Structure ◽  
Resolution Electron

Submicrometer-grained (SMG) structures were produced in Cu and Ni using an intense plastic straining technique, and the grain boundaries and their vicinities were observed by high-resolution electron microscopy. The grain boundaries exhibited zigzag configurations with irregular arrangements of facets and steps, and thus they were found to be in a high-energy nonequilibrium state. A similar conclusion was reached earlier for SMG Al–Mg solid solution alloys which have much lower melting points than Cu and Ni, suggesting that nonequilibrium grain boundaries are a typical feature of metals processed by intense plastic straining.

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