Electron microscopic studies of internal gettering of nickel in silicon
1990 ◽
Vol 5
(5)
◽
pp. 1013-1016
◽
Keyword(s):
The internal gettering of nickel in (100) silicon wafers implanted with 2.5 ⊠ 1015 argon-ions/cm2 at 280 keV has been studied by electron microscopy. Nickel deposited on the back surface is gettered by forming a discontinuous layer of nickel silicide, NiSi2, in the argon-implanted region near the front surface. Electron microdiffraction and high-resolution electron microscopy indicate that the layers of nickel silicide probably grow epitaxially on the undamaged silicon surrounding the silicide.
1967 ◽
Vol 33
(3)
◽
pp. 679-708
◽
1975 ◽
Vol 33
◽
pp. 624-625
1996 ◽
Vol 15
(22)
◽
pp. 2000-2001
◽
1990 ◽
Vol 48
(4)
◽
pp. 786-787
1995 ◽
Vol 71
(5)
◽
pp. 1109-1123
◽
1989 ◽
Vol 47
◽
pp. 260-261
1978 ◽
Vol 36
(3)
◽
pp. 470-482
◽
1971 ◽
Vol 29
◽
pp. 166-167
1983 ◽
Vol 41
◽
pp. 738-739
1983 ◽
Vol 41
◽
pp. 730-731