Evaluation of a silicon-containing benzocyclobutene thermoset resin as a plasma etch stop

1990 ◽  
Vol 5 (8) ◽  
pp. 1733-1738 ◽  
Author(s):  
Stephen R. Cain ◽  
Luis J. Matienzo ◽  
David W. Wang
Keyword(s):  
Etch Rate ◽  
Laser Interferometry ◽  
Thermosetting Resin ◽  
Plasma Etch ◽  
Thermoset Resin ◽  
Etch Stop

An experimental silicon-containing benzocyclobutene thermosetting resin from DOW has been evaluated for use as a plasma etch stop in packaging applications. The thermal and etch properties of this particular resin (DOW UX-13005.02L) make it suitable for use as an etch stop. Further, a model for in situ laser interferometry is proposed. By applying the model to the laser interferogram, the initial etch rate and amount of material removed before etching ceases may be determined.

Low k Film Etch in Applied Materials eMxP+ Chamber

1998 ◽  
Vol 544 ◽  
Author(s):  
Melissa Yu ◽  
Hongching Shan ◽  
Ashley Taylor
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Process Conditions ◽  
Plasma Etch ◽  
Absolute Value ◽  
Lower Dielectric Constant ◽  
Profile Control ◽  
Etch Stop ◽  
Anisotropic Etch ◽  
Low K

ABSTRACTThe materials with lower dielectric constant ( low k ) have been attracting attention recently because the low k material has the potential to be used in place of SiO2 in ULSI. In this work, we focused on evaluating organic low k material performance with plasma etch in the Applied Material's eMxP+ anisotropic etch chamber. The films studied were Dow Chemical BCB and Silk, Allied Signal Flare 2.0, and Du Pont FPI. The feature sizes of the wafer s were 0.25 to 1 micron trenches. Du Pont FPI resulted in the highest achieved etch rate of more than lum/min, followed by BCB, and Flare. The microloading study indicated that the etch rate microloading is less than 10% between lum and 0.25 urn feature sizes, which suggests that the chance of etch stop for a high aspect ratio features will be small. The profile could vary from bowing to vertical, to tapering by using different process conditions, mainly by temperature. The FP1 profile was more tapered than those of BCB and Flare when the same process was used to etch the same type of patterned wafer having these three different low k films. The detailed study showed that the trend of etch rate and profile for BCB and Flare film etch were similar, but that the absolute value for profile, as well as the trend of etch rate uniformity and profile were somewhat different. In conclusion, low k materials can be etched in AMAT traditional dielectric chamber (eMxP+) with a good etch rate and profile control.

Comparison of the Effect of Boron and Phosphorus Impurities on Solid Phase Epitaxial Regrowth of Amorphous Silicon

1989 ◽  
Vol 157 ◽  
Author(s):  
Young-Jin Jeon ◽  
M.F. Becker ◽  
R.M. Walser
Keyword(s):  
Amorphous Silicon ◽  
Isothermal Annealing ◽  
Solid Phase ◽  
Laser Interferometry ◽  
Electron Pairs ◽  
Quadratic Equations ◽  
Low Concentrations ◽  
Fractional Ionization ◽  
Reported Data

ABSTRACTThis work was concerned with comparing the relative effects of boron and phosphorus impurities on the solid phase epitaxial (SPE) regrowth rate of self-ion amorphized layers in silicon wafers with (100) orientation. We used previously reported data measured by in situ, high precision, cw laser interferometry during isothermal annealing for temperatures from 450°C to 590°C, and concentrations in the range from 7.8×1018 cm-3 to 5×l020 cm-3 for boron (NB), and from 5×l017 cm-3 to 3×1020 cm-3 for phosphorus (Np) impurities. The basis for the comparison was a recently developed model that extends the Spaepen-Turnbull model for silicon recrystallization to include ionization enhanced processes.The experimental data for bom boron and phosphorus exhibited the linear variation in regrowth rate expected for low concentrations of implanted hydrogenic impurities having a concentration-independent fractional ionization in amorphous silicon. In the linear range the relative enhanced regrowth rate produced by these impurities can be expressed as a product of their, relative fractional ionizations, and the relative amount the rate constant for reconstruction is altered by localizing an electron, or a hole, at the reconstruction site. Assuming that a localized hole and electron equally softened the potential barrier for reconstruction, the experimental results indicated that boron had an ?40 meV lower barrier to ionization in amorphous silicon than phosphorus.The variations in the SPE regrowth rates with higher concentrations of both implanted boron and phosphorus were well fit by quadratic equations, but with different curvatures (+ and - for B and P respectively). This result was interpreted to indicate that SPE regrowth was further enhanced by localized hole pairs, but retarded by localized electron pairs.

In-Situ, Time Resolved, Kinetics of Reactions in Co-Ge thin Films

1991 ◽  
Vol 237 ◽  
Author(s):  
R. M. Walser ◽  
Byung-Hak Lee ◽  
Alaka Valanju ◽  
Winston Win ◽  
M. F. Becker
Keyword(s):  
Depth Profiling ◽  
Laser Interferometry ◽  
Semiconductor Interface ◽  
Time Resolved ◽  
Interface Reactions ◽  
Valuable Adjunct ◽  
Diffusion Controlled ◽  
Sputter Deposited ◽  
Time Required

ABSTRACTWe report the first kinetic study of metal-semiconductor interface reactions using in-situ, time resolved, laser interferometry. Diffusion couples with Co/Ge thicknesses of 1500 Å/1500 Å were sputter deposited on silicon wafers, and vacuum-annealed at temperatures between 300°C-400°C. Under these conditions polycrystalline CoGe was expected to form [1]. Real time laser (HeNe 6328 Å) interferograms for each anneal were recorded in-situ. These data were supplemented by information from AES and X-ray.For temperatures below 400°C the diffusion controlled formation of CoGe was observed. The composition was confirmed by Auger depth profiling that showed uniform Co and Ge concentrations when the reaction went to completion. The well defined interferences fringes were formed by the dissolution of amorphous Ge. The activation energy = 1.6 eV for the formation of CoGe were determined with precision from the temperature dependence of the time required to anneal the fixed λ/4 distance between adjacent minima and maxima of the interferogram. We discuss the evidence for formation of an intermediate Co-rich compound following the initial diffusion of Co into Ge. The results of these experiments indicate that optical interferometry will be a valuable adjunct to other techniques used to study metal-semiconductor interface reactions.

Optimization of Wavelet-Filtered In-Situ Plasma Etch Data Using Neural Network and Genetic Algorithm

2011 ◽  
Vol 26 (3) ◽  
pp. 398-402 ◽  
Author(s):  
Byungwhan Kim ◽  
Daehyun Kim ◽  
Dongil Han ◽  
Nae-Il Lee
Keyword(s):  
Neural Network ◽  
Genetic Algorithm ◽  
Plasma Etch

Feature Size and Density Effects in Wet Selective Etching of GaAs/AlAs p-HEMT Structures with Organic Acid - Peroxide Solutions.

2003 ◽  
Vol 799 ◽  
Author(s):  
Vinay S. Kulkarni ◽  
Kanti Prasad ◽  
William Quinn ◽  
Frank Spooner ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Organic Acid ◽  
Etch Rate ◽  
Low Noise ◽  
Wet Etching ◽  
Low Noise Amplifiers ◽  
Etch Depth ◽  
Feature Size ◽  
Selective Etch ◽  
Etch Stop

ABSTRACTPseudomorphic HEMT (p-HEMT) devices are used in a number of wireless communication applications including power amplifiers in the 17–50 GHz range, low noise amplifiers and switches. Selective wet etching is often used to form the gate regions of these devices to avoid plasma damage associated with dry etching. We have investigated the wet etching of small (8μm to 0.5μm) features with organic acid - hydrogen peroxide solutions. Two acid solutions were used as a selective etchant for GaAs using AlAs etch stop layers in a p-HEMT structure grown by MBE. The etched features were characterized by AFM, SEM, and TEM techniques. The etch depth uniformity and reproducibility were found to depend on a number of factors including feature size, feature density, etching chemistry, agitation and surface tension. When features with a range of size and density were placed in close proximity in a layout we found that the etch rate of the different features was a function of density, size and most importantly the etch chemistry. One etchant solution exhibited a 12% difference in etch rate from the smallest feature to the largest, while another solution exhibited uniform etching of all features regardless of size or density. Both solutions produced specular etched surfaces in GaAs and AlGaAs. However, the AlAs etch stop showed a non-uniform surface morphology after etching. The surface morphology of the AlAs etch stop is one factor that limits the over etch which can be designed into the process. The most important factors to be considered in designing a selective etch process will be presented.

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