High-resolution electron microscopy of dislocations of MgO

1994 ◽  
Vol 9 (11) ◽  
pp. 2953-2958 ◽  
Author(s):  
J. Ohta ◽  
K. Suzuki ◽  
T. Suzuki
Keyword(s):  
Electron Microscopy ◽  
Plastic Deformation ◽  
High Resolution ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Burgers Vector ◽  
Resolution Electron ◽  
Lattice Images ◽  
Simulated Images ◽  
Image Simulations

Dislocations in MgO introduced by ion irradiation and by plastic deformation are observed by HREM. Depending on the Burgers vector and the dislocation character, various types of lattice images are obtained. Image simulations are performed for the inclination of dislocations, as well as for dissociated dislocations. A comparison of observed and simulated images shows that inclination of nondissociated dislocations makes them appear as if they were dissociated; in reality a/2(110) dislocations in MgO are not dissociated.

HRTEM simulation of interfacial structure in amorphous multilayers

1989 ◽  
Vol 47 ◽  
pp. 466-467
Author(s):  
Margaret L. Sattler ◽  
Michael A. O'Keefe
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Cross Section ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Multilayer Sample ◽  
Resolution Electron ◽  
Multilayered Materials ◽  
Simulated Images

Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.

Atomic chemistry by HREM and image simulations?

1986 ◽  
Vol 44 ◽  
pp. 828-829
Author(s):  
J.M. Howe ◽  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Information ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Image Simulations

The technique of high-resolution electron microscopy (HREM) is invaluable to the materials scientist because it allows examination of microstructural features at levels of resolution that are unobtainable by most other methods. Although the structural information which can be determined by HREM and accompanying image simulations has been well documented in the literature, there have only been a few cases where this technique has been used to reveal the chemistry of individual columns or planes of atoms, as occur in segregated and ordered materials.

Atomic structure of YB56 studied by digital high-resolution electron microscopy and electron diffraction

2001 ◽  
Vol 16 (1) ◽  
pp. 101-107 ◽  
Author(s):  
Takeo Oku ◽  
Jan-Olov Bovin ◽  
Iwami Higashi ◽  
Takaho Tanaka ◽  
Yoshio Ishizawa
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
High Resolution Electron Microscopy ◽  
Charge Coupled Device ◽  
X Ray ◽  
Resolution Electron ◽  
High Resolution Images ◽  
Diffraction Patterns ◽  
Simulated Images

Atomic positions for Y atoms were determined by using high-resolution electron microscopy and electron diffraction. A slow-scan charge-coupled device camera which had high linearity and electron sensitivity was used to record high-resolution images and electron diffraction patterns digitally. Crystallographic image processing was applied for image analysis, which provided more accurate, averaged Y atom positions. In addition, atomic disordering positions in YB56 were detected from the differential images between observed and simulated images based on x-ray data, which were B24 clusters around the Y-holes. The present work indicates that the structure analysis combined with digital high-resolution electron microscopy, electron diffraction, and differential images is useful for the evaluation of atomic positions and disordering in the boron-based crystals.

High resolution electron microscopy of bismuth and thallium superconductors

1988 ◽  
Vol 46 ◽  
pp. 868-869
Author(s):  
J. P. Zhang ◽  
D. J. Li ◽  
H. Shibahara ◽  
L. D. Marks
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Shear Wave ◽  
High Resolution Electron Microscopy ◽  
Double Layers ◽  
Resolution Electron ◽  
New Frontier ◽  
Image Simulations

A new frontier has opened up in the field of superconductivity with the very recent discovery of compounds of bismuth and thallium which appear to superconduct above 100 K. Both of these compounds appear to be perovskite derivatives with intergrowth of the basic perovskite with bismuth double-layers and perhaps thallium double layers. The structure of these compounds, however, is not as yet completely established, particularly the thallium material which to date has only been produced in very small quantities due to the toxic nature of thallium.We have very recently been studying both the bismuth and thallium superconductors by high resolution electron microscopy. The bismuth material appears to be an intergrowth of a five layer perovskite with a buckling of the structure along the b axis (see Figure 1) which preliminary image simulations suggest is in the form of a shear wave of amplitude in the region of 0.25 Angstroms.

Hrem Investigation of Ai-MgO Interface

1993 ◽  
Vol 319 ◽  
Author(s):  
W.P. Vellinga ◽  
M. Verwerft ◽  
J.Th.M. De Hosson ◽  
Tj. Hibma
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Metal Ceramic ◽  
Mgo Substrate ◽  
Image Simulations

AbstractA metal-ceramic interface was produced by depositing Al on a {100} MgO substrate in a MBE system. The interface was studied with High Resolution Electron Microscopy. Results of some image simulations are shown, raising the question if effects of ionicity and charging should be taken into account.

High-Resolution Electron Microscopy of Olivine-Magnetite Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
Stuart Mckernan ◽  
C. Barry Carter ◽  
Daniel Ricoult ◽  
A. G. Cullis
Keyword(s):  
Electron Microscopy ◽  
Phase Transitions ◽  
High Resolution ◽  
Mass Transport ◽  
High Resolution Electron Microscopy ◽  
Model System ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
Lattice Images

ABSTRACTThe oxidation of iron-rich olivine to produce magnetite is a model system for the study of phase transitions involving mass transport. High-resolution lattice images of have been obtained from magnetite precipitates in naturally modified iron-rich olivines. The magnetite/olivine interface is shown to be extremely sharp. Steps and misfit dislocations are present at the interface.

Dissolution of Copper Precipitates in An Fe−1·3Wt%Cu Alloy Under Fe+ Ion Irradiation

1998 ◽  
Vol 540 ◽  
Author(s):  
A. C. Nicol ◽  
M. L. Jenkins ◽  
N. Wanderka ◽  
C. Abromeit
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Room Temperature ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Cu Alloy ◽  
Transmission Electron ◽  
Resolution Electron ◽  
The Stability

AbstractThe stability of Cu precipitates in an Fe-1.3wt%Cu alloy under 300 keV Fe+ion irradiation has been investigated using transmission electron microscopy and high-resolution electron microscopy. The irradiations were carried out between room temperature and 550°C at displacement rates of 103 to 10−2 dpa(s)−1 to fluences of up to 30 dpa. Copper precipitates were found to keep their shape but decrease in size under all irradiation conditions. The results are discussed within the framework of a competitive process between irradiation induced ballistic destruction of precipitates by cascades and irradiation-enhanced precipitation.

Characterization of Cross-Sections of Tibacacuo Thin Films on Ceramic Substrates by Analytical and High Resolution Electron Microscopy

1989 ◽  
Vol 169 ◽  
Author(s):  
J. Mayer ◽  
M. Lanham ◽  
T.W. James ◽  
A.G. Evans ◽  
M. RÜHle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Cross Sections ◽  
High Resolution Electron Microscopy ◽  
Amorphous Layer ◽  
Superconducting Film ◽  
Ceramic Substrates ◽  
Resolution Electron ◽  
Lattice Images

AbstractCross-sectioned TEM specimens of thin TIBaCaCuO superconducting films on MgO and LaAlO3 substrates have been obtained using special ceramic holders. The superconductor/substrate interface as well as grain boundaries and defects in the superconductor have been characterized by means of analytical and high-resolution electron microscopy. EDX analysis and lattice images confirm that interdiffusion and the formation of an amorphous layer takes place at the interface between the LaA1O3 substrate and the superconducting film, while no indication for such reactions has been found in the case of the MgO substrates. The presence of intergrowth and defects in the superconducting film have been demonstrated by high-resolution electron microscopy. The chemical nature of such defects has been determined by a quantitative evaluation of high-resolution micrographs.

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