Microstructures of a-axis oriented YBCO films made by hybrid plasma sputtering

1995 ◽  
Vol 10 (4) ◽  
pp. 803-809 ◽  
Author(s):  
W. Ito ◽  
A. Oishi ◽  
S. Mahajan ◽  
Y. Yoshida ◽  
T. Morishita
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Anisotropic Growth ◽  
Plan View ◽  
Plasma Sputtering ◽  
Transmission Electron ◽  
Hybrid Plasma ◽  
Tilt Boundaries ◽  
Symmetrical Tilt ◽  
Twist Boundaries

Microstructures of a-axis oriented YBa2Cu3O7−x films made by newly developed de 100 MHz hybrid plasma sputtering were investigated using transmission electron microscopy (TEM). The films deposited on (110) NdGaO3 and (100) SrTiO3 substrates were found to grow in a perfect epitaxial fashion and with clear interface. The plan view of the TEM image showed that both films were comprised of two kinds of grains having the c axis aligning along two perpendicular directions in the plane with equal probability. The structures of the grain boundary, however, were found to be very different for the two films from the plan views. The film on NdGaO3 showed a lot of twist boundaries, while the film on SrTiO3 consisted of many symmetrical tilt boundaries and basal-plane-faced tilt boundaries. The type of grain boundary is determined by the anisotropic growth rates of the film between c direction and a-b direction.

Preparation of a-axis YBa2Cu3Ox epitaxial films using direct current-95 MHz hybrid plasma sputtering

1995 ◽  
Vol 10 (9) ◽  
pp. 2216-2234 ◽  
Author(s):  
Wataru Ito
Keyword(s):  
Substrate Surface ◽  
Tilt Boundary ◽  
Boundary Structure ◽  
Ion Density ◽  
Ybco Films ◽  
Plasma Sputtering ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Hybrid Plasma ◽  
Symmetrical Tilt

The dc-95 MHz hybrid plasma magnetron sputtering has been newly developed for obtaining a-axis oriented YBa2Cu3Ox (YBCO) films with an excellent crystallinity. The crystallinity was found to be the best among the films reported so far: the full width at half maximum value of 0.027°in the rocking curve measurement through the film (200) diffraction peak and Xmin of 2% estimated from the barium signal behind the surface peak in Rutherford backscattering (RBS) measurement using a 1 MeV He+ ion. The success in the excellent crystallinity was explained from the ion acceleration model at the ion sheath formed near the substrate surface considering the high ion density, which was revealed to be a characteristic of hybrid plasma. Almost perfect epitaxial growth was also confirmed by transmission electron microscopy. A characteristic grain boundary structure depending on the substrate was observed for the films on NdGaO3 and SrTiO3 substrates. Twist boundary is dominant for the film on NdGaO3, while symmetrical tilt boundary and basal-plane-faced tilt boundary exclusively exist for the film on SrTiO3. The microstructure of the film on SrTiO3 is very resistive against film relaxation. Strain relief was observed by RBS channeling spectra for the relatively high superconducting films. The results of Raman spectroscopy and RBS oxygen resonant measurements indicated that the oxygen content is not a critical parameter for determining the superconductivity of the a-axis oriented YBCO films, but oxygen ordering in the plane of the Cu-O chain and relief of the film strain are important for the improvement of Tc.

Structure and Dissociation of 15° Tilt Boundaries in Germanium

1983 ◽  
Vol 25 ◽  
Author(s):  
W. Skrotzki ◽  
H. Wendt ◽  
C. B. Carter ◽  
D. L. Kohlstedt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Czochralski Method ◽  
Boundary Plane ◽  
First Order ◽  
Grain Boundary Plane ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Tilt Boundaries

ABSTRACTThe structure and dissociation of grain boundaries in Ge bicrystals, grown by the Czochralski method, have been analyzed by visible light and transmission electron microscopy. The seed crystals were oriented to yield either a symmetric or an asymmetric grain boundary plane with a 15° rotation about a common <110> direction. The asymmetric boundary, with a {111} boundary plane, dissociated along most of its length into a first order twin boundary (Σ 3) and a symmetric 55° grain boundary (Σ 41c). The symmetric 15° boundary is composed of an array of Lomer dislocations. Contrary to theoretical predictions, this boundary is stable.

Diffusion, Migration and the Atomic Structure of some Grain Boundaries

1985 ◽  
Vol 57 ◽  
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Atomic Structure ◽  
Boundary Diffusion ◽  
Transmission Electron ◽  
Diffusion Migration ◽  
Tilt Boundaries ◽  
And Migration

AbstractThe atomic structure of representative tilt boundaries in gold has been determined by high resolution transmission electron microscopy. Characteristic and varying regions of decreased density and coordination have been identified and related to mechanisms of grain boundary diffusion and migration

TEM Study of Secondary Grain Boundary Dislocations in Near-∑13, Near-∑17 and Near-∑29 [001] Twist Boundaries in Gold

1985 ◽  
Vol 43 ◽  
pp. 244-245
Author(s):  
S.E. Babcock
Keyword(s):  
Electron Microscopy ◽  
Grain Boundary ◽  
Boundary Structure ◽  
Ordered Structure ◽  
Boundary Dislocation ◽  
High Angle ◽  
Extensive Search ◽  
Grain Boundary Structure ◽  
Transmission Electron ◽  
Twist Boundaries

In 1970, an extensive search by transmission electron microscopy (TEM) for evidence of ordered structure in high-angle [001] twist boundaries helped to establish the credibility of the DSC/CSL description of grain boundary structure. In this work, square grids of line contrast were found in boundaries for which the twist misorientation (Θ) was very near the special Σ5+ Σ13 and Σ17 Θ. The lines ran parallel to the primitive translation vectors (b(1) and b(2)) of the appropriate low-Σ DSC lattice, and their spacing correlated well with the spacing predicted by Frank's formula for dislocations with Burgers vectors b(1) and b(2). The images were interpreted as secondary grain boundary dislocation (SGBD) networks. Only for the near-Σ5 case was g•b analysis carried out to show that the line contrast was characteristic of b= 1/10 <310> type screw SGBD's.

Investigation of the low angle grain boundaries in highly oriented diamond films via transmission electron microscopy

1994 ◽  
Vol 9 (10) ◽  
pp. 2487-2489 ◽  
Author(s):  
F.R. Sivazlian ◽  
J.T. Glass ◽  
B.R. Stoner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Plan View ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Defect Densities

Highly oriented diamond thin films grown on silicon via microwave plasma chemical vapor deposition were examined by transmission electron microscopy. In the plan view, defects appearing at the grain boundary were easily observed. (100) faceted grains that appeared to have coalesced were connected at their interfaces by dislocations characteristic of a low angle grain boundary. From Burgers vector calculations and electron diffraction patterns, the azimuthal rotation between grains was measured to be between 0 and 6°. The defect densities of these films are compared to reports from (100) textured randomly oriented films, and the relative improvement due to the reduction of misorientation and grain boundary angles is discussed.

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

High-resolution microscopy of twin boundaries in gold

1987 ◽  
Vol 45 ◽  
pp. 260-261
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
High Resolution ◽  
Specimen Preparation ◽  
Gold Films ◽  
Boundary Area ◽  
Transmission Electron ◽  
Recent Developments ◽  
Tilt Boundaries ◽  
High Resolution Microscopy ◽  
Twist Boundaries

Recent developments in specimen preparation, imaging and image analysis together permit the experimental determination of the atomic structure of certain, simple grain boundaries in metals such as gold. Single crystal, ∼125Å thick, (110) oriented gold films are vapor deposited onto ∼3000Å of epitaxial silver on (110) oriented cut and polished rock salt substrates. Bicrystal gold films are then made by first removing the silver coated substrate and placing in contact two suitably misoriented pieces of the gold film on a gold grid. Controlled heating in a hot stage first produces twist boundaries which then migrate, so reducing the grain boundary area, to give mixed boundaries and finally tilt boundaries perpendicular to the foil. These specimens are well suited to investigation by high resolution transmission electron microscopy.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Structural Investigation ◽  
Amorphous Material ◽  
Porous Si ◽  
Plan View ◽  
Mesh Structure ◽  
Transmission Electron ◽  
Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

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