In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

Direct UHV-TEM Observation of Palladium Clusters on a Silicon Surface

2004 ◽  
Vol 10 (1) ◽  
pp. 134-138 ◽  
Author(s):  
Masaki Takeguchi ◽  
Kazutaka Mitsuishi ◽  
Miyoko Tanaka ◽  
Kazuo Furuya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Silicon Surface ◽  
Lattice Structure ◽  
Plan View ◽  
Palladium Clusters ◽  
Transmission Electron ◽  
Pd Clusters

About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed byin situplan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.

In situ silicification of an Icelandic hot spring microbial mat: implications for microfossil formation

1995 ◽  
Vol 32 (12) ◽  
pp. 2021-2026 ◽  
Author(s):  
S. Schultze-Lam ◽  
F. G. Ferris ◽  
K. O. Konhauser ◽  
R. G. Wiese
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Hot Spring ◽  
Microbial Mat ◽  
Chloroflexus Aurantiacus ◽  
X Ray ◽  
Exceptional Preservation ◽  
Transmission Electron ◽  
Nucleation Sites

Transmission electron microscopy and energy-dispersive x-ray analysis revealed that filamentous phototrophic bacteria resembling Chloroflexus aurantiacus underwent rapid silicification in an Icelandic hot spring microbial mat. The mineralization associated with the cells occurred both extracellularly, within and on the external sheaths of the bacteria, and intracellularly, within the cytoplasm. The exceptional preservation of the bacterial sheaths is due to the presence of distinct mineral nucleation sites. This results in the production of silica casts of the bacteria, which bear a striking resemblance to microbial remains in ancient microfossil assemblages.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

Progress in environmental high-voltage transmission electron microscopy for nanomaterials

2020 ◽  
Vol 378 (2186) ◽  
pp. 20190602
Author(s):  
Nobuo Tanaka ◽  
Takeshi Fujita ◽  
Yoshimasa Takahashi ◽  
Jun Yamasaki ◽  
Kazuyoshi Murata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Voltage ◽  
High Energy ◽  
Transmission Electron ◽  
Recent Developments ◽  
In Situ Observations ◽  
High Voltage Transmission ◽  
And Function

A new environmental high-voltage transmission electron microscope (E-HVEM) was developed by Nagoya University in collaboration with JEOL Ltd. An open-type environmental cell was employed to enable in-situ observations of chemical reactions on catalyst particles as well as mechanical deformation in gaseous conditions. One of the reasons for success was the application of high-voltage transmission electron microscopy to environmental (in-situ) observations in the gas atmosphere because of high transmission of electrons through gas layers and thick samples. Knock-on damages to samples by high-energy electrons were carefully considered. In this paper, we describe the detailed design of the E-HVEM, recent developments and various applications. This article is part of a discussion meeting issue ‘Dynamic in situ microscopy relating structure and function'.

In-Situannealing Transmission Electron Microscopy(Tem) Study of the Ti/GaAs Interfacial Reactions

1989 ◽  
Vol 148 ◽  
Author(s):  
Ki-Bum Kim ◽  
Robert Sinclair
Keyword(s):  
Electron Microscopy ◽  
Gaas Substrate ◽  
Metal Film ◽  
Interfacial Reactions ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Initial Stage ◽  
Random Manner

ABSTRACTIn-situ annealing TEM experiments were performed on the Ti/GaAs system in order to study the dynamic behavior of interfacial reactions. Both plan-view and cross-sectional samples were investigated in either diffraction and imaging (both conventional and high resolution) modes. During experiments, we observed the following: (a) At the initial stage of reaction, the TiAs phase formed at the original Ti/GaAs interface with a distinct orientation with respect to the substrate; (b) as the reaction proceeded, the TiAs phase formed in a random manner; (c) finally, the liberated Ga species from the GaAs diffused out to the metal film and formed TiGa2 phase in the plan-view sample similar to the furnace-annealed case. For the cross-sectional sample, however, we did not observe any Ti:Ga phase formation. Instead, we observed the formation of voids both in the Ti film and in the GaAs substrate. The formation of different microstructure between in-situ and furnace annealed cases is explained by the sample geometry during annealing.

Nucleation Dynamics of Water Nanodroplets

2014 ◽  
Vol 20 (2) ◽  
pp. 407-415 ◽  
Author(s):  
Dipanjan Bhattacharya ◽  
Michel Bosman ◽  
Venkata R.S.S. Mokkapati ◽  
Fong Yew Leong ◽  
Utkur Mirsaidov
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gold Nanoparticles ◽  
Heterogeneous Nucleation ◽  
Flat Surface ◽  
Nucleation And Growth ◽  
Length Scale ◽  
Transmission Electron ◽  
Nucleation Sites

AbstractThe origin of the condensation of water begins at the nanoscale, a length-scale that is challenging to probe for liquids. In this work we directly image heterogeneous nucleation of water nanodroplets by in situ transmission electron microscopy. Using gold nanoparticles bound to a flat surface as heterogeneous nucleation sites, we observe nucleation and growth of water nanodroplets. The growth of nanodroplet radii follows the power law: R(t)~(t−t0)β, where β~0.2−0.3.

Epitaxial Growth and Stability of C49 TiSi2 ON Si(111).

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyeongtag Jeon ◽  
J. W. Honeycutt ◽  
C. A. Sukow ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Metastable Phase ◽  
Plan View ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
The Individual ◽  
Relationship Of

ABSTRACTEpitaxial TiSi2 films have been grown by molecular beam epitaxy (MBE) on atomically clean Si(111)-orientated substrates. The growth procedure involves the ambient temperature deposition of Ti films of 50Å thickness and annealing to 800°C. In situ low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) techniques have been used to monitor the TiSi2 formation process. The epitaxial films have been identified as the C49 metastable phase by both Raman spectroscopy and electron diffraction. Plan view transmission electron microscopy shows three different connected island morphologies. The individual island structures are single crystal and are grown epitaxially with different crystallographic orientations. The orientational relationship of the largest islands is given by [3 1 1] C49 TiSi2//[112]Si and (130) C49 TiSi2//(l1 1)Si. High resolution transmission electron microscopy (HRTEM) cross-section shows a coherent interface extending over several hundred angstroms.

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