Wet forming, sintering behavior, and dielectric properties of BaTi0.8Zr0.2O3

1996 ◽  
Vol 11 (12) ◽  
pp. 3071-3076 ◽  
Author(s):  
Yoshihiro Hirata ◽  
Takahiro Kawazoe
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Lattice Parameter ◽  
Sintering Behavior ◽  
Ferroelectric State ◽  
Uniform Microstructure ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Diffuse Phase

Density, grain size, lattice parameter, and dielectric properties were measured on BaTi0.8Zr0.2O3 sintered at 1100–1600 °C. The hydrothermally prepared BaTi0.8Zr0.2O3 particles of 128 nm diameter were consolidated by filtration of 2-methoxyethanol suspensions and subsequently compressed by isostatic pressing under a pressure of 294 MPa to form a uniform microstructure of high density (52% of the theoretical density). These green compacts were sintered to a relative density of above 99% in the temperature range from 1350 to 1600 °C where rapid grain growth to above 30 μm occurred. Increase of sintering temperature was accompanied by the increase of lattice parameter and dielectric constant of BaTi0.8Zr0.2O3 at room temperature. The sintered BaTi0.8Zr0.2O3 showed a diffuse phase transition from paraelectric (higher temperature) to ferroelectric state (lower temperature) at 32 °C.

Effect of Sintering Temperature on Structure and Dielectric Properties of Lead Free K0.5Na0.5NbO3 Prepared via Hot Isostatic Pressing

2017 ◽  
Vol 888 ◽  
pp. 42-46 ◽  
Author(s):  
Fatin Khairah Bahanurdin ◽  
Julie Juliewatty Mohamed ◽  
Zainal Arifin Ahmad
Keyword(s):  
Grain Size ◽  
Dielectric Properties ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Hot Isostatic Pressing ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Tangent Loss ◽  
Isostatic Pressing ◽  
Tan Δ

In this research, alkaline niobate known as K0.5Na0.5NbO3 (KNN) lead-free piezoelectric ceramic was synthesis by solid state reaction method which pressing at different sintering temperatures (1000 °C and 1080 °C) prepared via hot isostatic pressing (HIP)). The effect of sintering temperature on structure and dielectric properties was studied. The optimum sintering temperature (at 1080 °C for 30 minutes) using hot isostatic pressing (HIP) was successfully increase the density, enlarge the particle grain size in the range of 0.3 µm – 2.5 µm and improves the dielectric properties of K0.5Na0.5NbO3 ceramics. The larger grain size and higher density ceramics body will contribute the good dielectric properties. At room temperature, the excellent relative permittivity and tangent loss recorded at 1 MHz (ɛr = 5517.35 and tan δ = 0.954), respectively for KNN1080HIP sample. The KNN1080HIP sample is also exhibits highest relative density which is 4.485 g/cm3. The ɛr depends upon density and in this work, the density increase as the sintering temperature increase, which resulting the corresponding ɛr value also increases.

Electrical and Magnetic Studies of (La0.5-xPrxBa0.5)(Mn0.5Ti0.5)O3 as Multiferroic Material

2012 ◽  
Vol 545 ◽  
pp. 269-274
Author(s):  
Nor Hayati Alias ◽  
Abdul Halim Shaari ◽  
Wan Mohamad Daud Wan Yusoff ◽  
Che Seman Mahmood
Keyword(s):  
Magnetic Properties ◽  
Dielectric Properties ◽  
Solid State ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Multiferroic Material ◽  
Magnetic Studies ◽  
State Technique ◽  
Magnetic And Dielectric Properties ◽  
Synthesized Materials

A new perovskite based titano-manganite (La0.5-xPrxBa0.5)(Mn0.5Ti0.5)O3 at x concentration 0, 0.01, 0.03, 0.05, 0.07 and 0.09 has been successfully prepared by ceramic solid-state technique at sintering temperature of 1300 °C. Dielectric electrical properties of the synthesized materials at frequency ranging from 5 Hz to 1 MHz and magnetic properties have been studied at room temperature. Analyses have been carried out to determine the structural, magnetic and dielectric properties of the synthesized material as a candidate of multiferroic material.

Cu/GDC Cermet Anodes by Sintering via Surface Modification with MgO Sol

2007 ◽  
Vol 544-545 ◽  
pp. 953-956
Author(s):  
Kyoung Ran Han ◽  
Youn Ji Jeong ◽  
Chang Sam Kim ◽  
Hai Won Lee
Keyword(s):  
Surface Modification ◽  
Copper Oxide ◽  
Composite Powder ◽  
Sintering Temperature ◽  
Electronic Conductivity ◽  
Molten Copper ◽  
Uniform Microstructure ◽  
Fabrication Procedure ◽  
Lower Temperature ◽  
Oxide Melts

CuO/GDC composite powder with 50 wt% of CuO was prepared by surface modification of ~60 nm GDC powder with Cu precursors. Since copper oxide melts at lower temperature than GDC sintering temperature, fabrication procedure was modified by inducing infiltration of molten copper oxide via capillary force and then followed by heat treatment at ~1000. Surface modification was carried out with a MgO sol to suppress agglomeration of GDC. Such prepared Cu/GDC cermets showed uniform microstructure and excellent electronic conductivity of ~8500 S/cm for the Cu/GDC cermet and ~10200 S/cm for the modified one at 800.

Low Temperature Sintering and Microwave Dielectric Properties of Zinc Titanate Ceramics for LTCC Applications

2008 ◽  
Vol 368-372 ◽  
pp. 179-182
Author(s):  
Zong Chi Liu ◽  
Dong Xiang Zhou ◽  
Shu Ping Gong
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Solid State Method ◽  
Zinc Titanate ◽  
Microwave Dielectric ◽  
Conventional Solid State Method ◽  
State Method ◽  
Titanate Ceramics

The effects of CuO-MoO3 addition on the sintering behavior and microwave dielectric properties of ZnO-TiO2 ceramics were investigated. ZnO-TiO2 ceramics were prepared with conventional solid-state method and sintered at temperatures from 850 to 1050 °C. The sintering temperature of ZnO-TiO2 ceramics with CuO-MoO3 addition could be effectively reduced to 950 °C due to the liquid phase effects resulting from the additives. A proper amount of CuO-MoO3 addition could effectively improve the densification and microwave dielectric properties of ZnO-TiO2 ceramics. ZnO-TiO2 ceramics with 3 wt% addition sintered at 950 °C for 4 h exhibited better microwave dielectric properties as follows: εr of 26.8, a Q×f value of 16780 GHz at 5.42 GHz, and a τ f value of +34.7 ppm/°C.

Low Temperature Sintering of (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 Microwave Dielectric Ceramics

2010 ◽  
Vol 663-665 ◽  
pp. 1028-1031
Author(s):  
Yue Ming Li ◽  
Hua Zhang ◽  
Zhu Mei Wang ◽  
Yan Hong ◽  
Zong Yang Shen
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Low Temperature Sintering ◽  
Microwave Dielectric Ceramics ◽  
Microwave Dielectric ◽  
Dielectric Ceramics

The sintering behavior and microwave dielectric properties of the (Ca0.9375Sr0.0625)0.25(Li0.5Sm0.5)0.75TiO3 (CSLST) ceramics doped with different amounts of Li2O-B2O3-SiO2-CaO-Al2O3 (LBSCA) glass were investigated. The sintering temperature of the CSLST ceramics can be effectively reduced over 200oC due to the addition of LBSCA glass. For the 5 wt% LBSCA-doped CSLST ceramics, which are sintered at only 1000 oC for 5 h, show optimum microwave dielectric properties as follows: εr=84.74, Qf=2446 GHz and τf=-12.48 ppm/oC.

Investigation on the Effect of Mn on the Dielectric Properties of Ba0.4Sr0.6TiO3/MgAl2O4/MgO Composite Ceramics

2009 ◽  
Vol 421-422 ◽  
pp. 65-68
Author(s):  
Jing Ji Zhang ◽  
Ji Wei Zhai ◽  
Ming Wei Zhang ◽  
Xi Yao
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Solid State Reactions ◽  
Composite Ceramics ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Three Phases

xMnCO3–(1–x)[70wt% (10wt% MgO–90wt% Ba0.4Sr0.6TiO3)–30wt% MgAl2O4] (where x=0.0, 0.5, 1.0, 2.0, 5.0 and 10.0wt%) composite ceramics have been prepared through the solid-state reactions. Three phases, corresponding to the Ba0.4Sr0.6TiO3(BST), MgAl2O4(MA) and MgO phases, are clearly visible in the composite ceramics. The permittivity peak is initially enhanced and shifted toward a higher temperature and then suppressed, shifted toward a lower temperature. Meanwhile, the tunability (calculated by [ε(E0)−ε(E)]/ε(E0)) is also initially improved and then decreased by doping MnCO3.

scholarly journals Sintering Behavior of BST Nanoparticles at Low Temperature and Electrical Properties of their Ceramics

2020 ◽  
Author(s):  
Jianquan Qi ◽  
Yan Li ◽  
Mengyin Li ◽  
Jiahui Xie ◽  
Tianchi Yu ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Dielectric Constant ◽  
Alkaline Earth ◽  
Room Temperature ◽  
Sintering Temperature ◽  
Sintering Behavior ◽  
Sintering Aids ◽  
Bst Ceramics ◽  
Related Compounds ◽  
Alkaline Earth Cations

Abstract The powders of the Ba0.75Sr0.25TiO3 (BST) nanoparticles were directly synthesized by milling of Ba(OH)2·8H2O, Sr(OH)2·8H2O and Ti(BuO)4 in ethanol at room temperature. They have homogenous grains of ~15 nm and the high sintering activity. The dense ceramics with the density >90% can be obtained at a sintering temperature of ≤950 oC by them with adding 3 wt% sintering aids of Bi2O3 and Li2CO3. The sintering behavior of the BST nanoparticles by adding the aids of Bi2O3 and Li2CO3 is studied carefully. Several Bi-related compounds are involved in the sintering procedure at a different temperature. They enhance the mass transfer and promote the sintering densification. These compounds such as Ba2BiO4 and SrBiO4 appear at 800 oC, LiBa4Bi3O11 and Sr1.2Bi0.8O3 appear over 830 oC, and Bi8.11Ba0.89O13.05 appears at 950 oC. The cation Bi in the ceramics has mixture valences of 3+ and 5+. It makes the ceramics as semiconducting state with the dark gray color and decreases the ceramics resistivities. With the sintering temperature increase, especially at 950 oC, the cation Bi tends back to single valence of +3 in the ceramics. The most of alkaline earth cations in Bi-related compounds will release and resorb into the lattice of BST and drive the densification of the nanoparticles. The BST ceramics can have a peak dielectric constant >6500 at 53 oC, loss <0.025, and resistivity >1012 W·cm when sintered at a temperature of ≥900 oC with 3 wt% sintering aids. They have a potential application for multiple layer ceramic capacitors (MLCC) with silver inner-electrodes.

Application of La2O3-B2O3-TiO2 Glass-Ceramic for Low Temperature Co-Fired Ceramic (LTCC) Materials

2004 ◽  
Vol 449-452 ◽  
pp. 729-732 ◽  
Author(s):  
Byung Hae Jung ◽  
Seong Jin Hwang ◽  
Hyung Sun Kim
Keyword(s):  
Rare Earth ◽  
Dielectric Properties ◽  
Low Temperature ◽  
Borate Glass ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Microwave Dielectric ◽  
Good Potential ◽  
Phase Evaluation

A low-temperature co-fired composition with sintering temperature of <900 °C was developed using rare earth derived borate glass (La2O3-B2O3-TiO2) and a conventional BNT (BaONd2O3-TiO2) ceramic. The sintering behavior, phase evaluation, sintered morphology, and microwave dielectric properties were investigated. It was found that increasing the sintering temperature from 750 to 850°C leads to increases in shrinkage, densities and microwave dielectric properties (≈ 20 for εr and >8000 for Q*f0). However, after 850 °C , the values of these properties decreased. It is suggested therefore that this new composite has good potential as a new candidate for low temperature co-fired ceramic (LTCC) materials.

Low-Temperature Firing and Microwave Dielectric Properties of Zn3Nb2O8 Ceramics with CuO-V2O5-Bi2O3

2010 ◽  
Vol 434-435 ◽  
pp. 224-227
Author(s):  
Xu Ping Lin ◽  
Jing Tao Ma ◽  
Bao Qing Zhang ◽  
Ji Zhou
Keyword(s):  
Dielectric Constant ◽  
Phase Composition ◽  
Dielectric Properties ◽  
Relative Density ◽  
Sintering Temperature ◽  
Microwave Dielectric Properties ◽  
Sintering Behavior ◽  
Co Doping ◽  
Microwave Dielectric ◽  
Quality Factor Q

The influence of CuO-V2O5-Bi2O3 addition on the sintering behavior, phase composition, microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated. The co- doping of CuO, V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1150°C to 900°C. The Zn3Nb2O8-0.5wt% CuO-0.5wt% V2O5-2.0wt% Bi2O3 ceramic sintered at 900°C showed a relative density of 97.1%, a dielectric constant (εr) of 18.2, and a quality factor (Q×f) of 36781 GHz. The dielectric properties in this system exhibited a significant dependence on the relative density, content of additives and sintering temperature. The relative density and dielectric constant (εr) of Zn3Nb2O8 ceramics increased with increasing CuO-V2O5-Bi2O3 additions. And also the relative density and dielectric constant of Zn3Nb2O8 ceramics increased by the augment of the sintering temperature.

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