Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method

1998 ◽  
Vol 13 (12) ◽  
pp. 3436-3441 ◽  
Author(s):  
Tae Song Kim ◽  
Dong Joo Kim ◽  
Jeon Kook Leea ◽  
Hyung Jin Jung
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Lead Zirconate ◽  
Hysteresis Curve ◽  
Grown Film

Well-crystallized Pb(Zr0.52Ti0.48)O3 thin films (4000 Å thickness) can be synthesized on Pt/Ti/SiO2/Si(100) substrate at a temperature as low as 520 °C. The polycrystalline lead zirconate titanate (PZT) perovskite phase formation was confirmed with x-ray diffraction (XRD) analysis, and growth morphologies were studied with a scanning electron microscope (SEM). The electrical properties of PZT thin films were characterized through P-E hysteresis curve, dielectric constant, and loss, fatigue, and leakage current measurements. Remanent polarization (Pr) and coercive field (Ec) of as-grown film were 8–30 μC/cm2 and 24–64 kV/cm with the variation of applied voltage (5–15 V). The post-annealing enhances the electrical properties even at 500 °C, which is below the as-grown temperatures (520 °C). The average polarization loss after applying rectangular pulse (Vp-p = 10 V) up to 1011 cycles was 40.9% for a 300 μm small dot and 22% for a 500 μm large dot, which are relatively improved values for platinum electrode. The values of dielectric constant (ε′) and tan δ measured with small signal sign wave (1 V, 10 kHz) were 1207 and 0.066 in the case of as-grown film.

Compositional and Structural Properties of Sputtered Plzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
P.J. Borrelli ◽  
P.H. Ballentine ◽  
A.M. Kadin
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Target Surface ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Ferroelectric Capacitor ◽  
Target Composition ◽  
Loose Powder

AbstractThin films of lanthanum-modified lead zirconate-titanate (PLZT) were prepared by rf magnetron sputtering from a single oxide target onto a heated substrate. The target consisted of Pbl-xLaxZryTi1-yO3 with composition close to x=8% and y= 65%, either as a loose powder or a solid sintered disk. Under appropriate conditions, the desired perovskite phase formed in situ without any subsequent post-anneal. Film composition and structure were correlated with deposition parameters, including substrate temperature, target composition, gas pressures, and target aging. For deposition onto MgO or A12O3 crystalline substrates, perovskite PLZT films formed if there was sufficient Pb at the target surface, sufficient oxygen in the sputter gas (≈ 50%), and a substrate temperature >≈600°C. Target heating led to excessive Pb loss from the loose powder target; this was much less significant for the solid target. In addition, it was found that deposition onto an epitaxial perovskite substrate promoted formation of the perovskite phase, leading to an epitaxial film. A prototype ferroelectric capacitor was fabricated by depositing a conducting perovskite film (the high-Tc superconductor YBa2 Cu3O7 ) on a perovskite substrate, sputtering PLZT on top, with Ag for a top electrode. Measurements indicate a remanent polarization of 5 μC/cm2 and a coercive field of 900 V/cm.

Pb(Zr0.52Ti0.48)O3 Ceramics Synthesized Using Planetary Ball Mill

2012 ◽  
Vol 620 ◽  
pp. 486-490
Author(s):  
Shafiza Afzan Sharif ◽  
Julie Juliewatty Mohamed ◽  
W.A.W. Yusoff
Keyword(s):  
Lead Zirconate Titanate ◽  
Ball Mill ◽  
Single Phase ◽  
Perovskite Phase ◽  
Xrd Analysis ◽  
Lead Zirconate ◽  
Planetary Ball Mill ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Pzt Ceramics

Lead zirconate titanate Pb (Zr0.52Ti0.48)O3, (PZT) ceramic was successfully prepared from the mixture of commercial PbO, TiO2and ZrO2powders using planetary ball mill at room temperature. The phase formation and microstructure of the milled powders were characterized using X-ray diffraction (XRD) and Scanning Electron Microscope (SEM). XRD results indicated that the perovskite phase of PZT was formed from the mixture of starting materials after milling for 40 h. The grain sizes of the powders have been estimated from the SEM images to be ~200 nm. The compacted PZT samples were then sintered at 950 °C for 1 h. The samples were characterized by XRD and SEM, meanwhile the density was measured by Archimedes principle. XRD analysis on the sintered samples revealed the formation of single phase Pb (Zr0.52Ti0.48)O3ceramics while the SEM images estimated the grain size to be ~2 µm. The relative density of the obtained sintered PZT ceramics was measured to be approximately 99.93 % of the theoretical density. The results hence indicate that planetary ball mill is an effective preparatory technique to improve the sinterability of PZT ceramics.

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

Structure and Characterization of Sputtered Thin Films Based on Lead Titanate.

1991 ◽  
Vol 230 ◽  
Author(s):  
A. Pignolet ◽  
P. E. Schmid ◽  
L. Wang ◽  
F. Lévy
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Pyroelectric Coefficient ◽  
Amorphous Films ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

AbstractPure and doped lead-titanate (PT) and lead-zirconate-titanate (PZT) thin films have been deposited on platinum-coated silicon by rf-magnetron sputtering from pressed powder targets. The films have been deposited without substrate heating. The amorphous films were then annealed in an oxygen flow. The structure of the films is tetragonal or rhombohedral depending on composition. The electrical resistivity, dielectric permittivity, ferroelectric hysteresis and pyroelectric coefficient are reported.

Epitaxial Growth and Electrical Characterization of PBZT Thin Films by RF Magnetron Sputtering Deposition

2007 ◽  
Vol 336-338 ◽  
pp. 173-176
Author(s):  
Hui Qing Fan ◽  
Lai Jun Liu ◽  
Xiu Li Chen ◽  
Jie Zhang ◽  
Wei Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Pyrochlore Phase ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Sputtering Deposition ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Barium modified lead zirconate titanate (PBZT) thin films were grown epitaxially on Pt/Ti/SiO2/Si substrates by radio-frequency magnetron sputtering deposition and characterized by X-ray diffraction and scanning electron microscopy. Depending on the growth condition, a wide variation of crystal structure and morphology was evolved in PBZT thin films. The formation of phase structure and pyrochlore phase was strongly dependent on the oxygen partial pressure and re-evaporation of lead from the films during the deposition. Perovskite films were obtained by optimizing the deposition conditions and analyzed by the ferroelectric hysteresis (P~E).

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