Preparation of epitaxial SrBi2Nb2O9 and SrBi2Ta2O9 thin films by the coating-pyrolysis process

1999 ◽  
Vol 14 (7) ◽  
pp. 3090-3095 ◽  
Author(s):  
T. Nagahama ◽  
T. Manabe ◽  
I. Yamaguchi ◽  
T. Kumagai ◽  
S. Mizuta ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Films ◽  
Yttria Stabilized Zirconia ◽  
Pyrolysis Process ◽  
Stabilized Zirconia ◽  
Epitaxial Relationship ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Relationship Of

Epitaxial and polycrystalline thin films of bismuth layer-structured ferroelectrics, SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT), were prepared on single-crystal SrTiO3(001) and polycrystalline yttria-stabilized zirconia substrates, respectively, by the coating-pyrolysis process. The epitaxial relationship of the films and substrates was SBN, SBT (001)//SrTiO3(001) and SBN, SBT [100]//SrTiO3[100],[010], where pseudotetragonal indices were adopted for SBN and SBT. The lattices of the epitaxial films were found to be slightly strained owing to stress from the substrate. Atomic force microscopy observations showed that the epitaxial films as well as polycrystalline films consisted of round-shaped, islandlike grains of submicrometer size.

High-resolution transmission electron microscopic investigations of molybdenum thin films on faceted α-Al2O3

2005 ◽  
Vol 38 (2) ◽  
pp. 260-265 ◽  
Author(s):  
Leonore Wiehl ◽  
Jens Oster ◽  
Michael Huth
Keyword(s):  
High Resolution ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Α Al2o3 ◽  
Relationship Of

Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundummsurface was determined.

scholarly journals Laser Ablation Ceramic Target for 8YSZ High-k Dielectric Electrolyte thin Films Precessed by PLD on Si(100) and Pt/Si(111)

2020 ◽  
Vol 71 (7) ◽  
pp. 272-277
Author(s):  
Rovena Veronica Pascu
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
High K ◽  
Potential Applications ◽  
Electrochemical Devices ◽  
High K Dielectric

The cubic structure 8YSZ (8%Yttria-Stabilized Zirconia) thin films deposited by PLD(Pulsed Laser Deposition) on substrates Si (100) and Pt/Si (111) by identical control parameters have potential applications as electrolytes for planar micro electrochemical devices like Lambda oxygen sensors and IT-�SOFC. It appearance differences in polycrystalline structural and optical characterization by XRD (X-ray Diffraction), SEM (Scanning Electron Microscope), AFM (Atomic Force Microscopy) and V- VASE (Variable Angle Spectroscopic Ellipsometry. The differences are relating on crystalline dimensions, lattice parameters; surface roughness measured by V- VASE and AFM are presented synthetic to evidence the differences generated by substrates.

Two conductive mechanisms in LaMnO3 thin film: Adiabatic and nonadiabatic small polaronic hopping

2021 ◽  
pp. 2150310
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Huan Zheng ◽  
Jing Wang ◽  
Hao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Theoretical Models ◽  
Magnetic Phase Transitions ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Reciprocal Space Mapping ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane

We have presented the structural, surface morphology, magnetic and resistivity data for perovskite LaMnO3 epitaxial thin films which are fabricated on well-oriented (001) LaAlO3 substrates by pulsed laser deposition technique. X-ray diffraction [Formula: see text]–[Formula: see text] linear scans and reciprocal space mapping measurement confirm that the out-of-plane and in-plane epitaxial relationship are LMO(001)/LAO(001) and LMO(110)/LAO(110), respectively. Surface roughness determined by atomic force microscopy was no more than 0.3 nm. In the whole studied temperature range, all films only show a paramagnetic behavior instead of any magnetic phase transitions. Correspondingly, the electron transport behaviors always exhibit an insulting state as the temperature changes from high to low. However, we find that none of theoretical models can individually be used to understand their conductive mechanisms. Further studies indicated that charge carries of high and low temperature region obey adiabatic and nonadiabatic small polaronic hopping mechanisms, respectively. This finding offers new ways of exploiting the abnormal ferromagnetism in LaMnO3 multilayer thin films.

Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd

1995 ◽  
Vol 401 ◽  
Author(s):  
Masaru Shimizu ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Memory Device ◽  
Initial Growth ◽  
Epitaxial Relationship ◽  
Pzt Thin Films ◽  
Atomic Force ◽  
Device Applications ◽  
Switching Characteristics ◽  
Plzt Thin Films ◽  
Relationship Of

AbstractUsing the MOCVD process to produce Pb(Zr, Ti)O3 (PZT) thin films, control of the film stoichiometry and crystalline phase was achieved. The PZT films obtained showed good step coverage, 67%. Uniform PZT and PLZT thin films with a variation of film thickness of less than ±1.5% were successfully obtained on a 6–8 inch silicon wafer. For the evaluation of the crystallinity and epitaxial relationship of the PZT thin films, the total reflection X-ray diffraction (TRXD) method was used for the first time. Using TRXD, the in-plane orientations of PZT and Pt in PZT/Pt/MgO were evaluated. The growth mechanism of PbTiO3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM). The switching characteristics of PZT capacitors using Ir and IrO2 electrodes for memory device applications were also investigated and a PZT capacitor with no fatigue up to a switching cycle of 1011 was obtained.

scholarly journals Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Oleg Gorshkov ◽  
Dmitry Filatov ◽  
Dmitry Antonov ◽  
Ivan Antonov
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Oscillation Loop ◽  
In Series

The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation.

Probing local electrochemical activity within yttria-stabilized-zirconia via in situ high-temperature atomic force microscopy

2014 ◽  
Vol 30 (3) ◽  
pp. 357-363 ◽  
Author(s):  
Jiaxin Zhu ◽  
Carlos R. Pérez ◽  
Tae-Sik Oh ◽  
Rainer Küngas ◽  
John M. Vohs ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Electrochemical Activity ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Force Microscopy ◽  
Atomic Force ◽  
Image Position

Abstract

Preparation of Epitaxial and Polycrystalline La0.8Sr0.2MnO3 Films by Dipping-Pyrolysis Process

1997 ◽  
Vol 474 ◽  
Author(s):  
T. Manabe ◽  
T. Fujimoto ◽  
K-S. Hwang ◽  
I. Yamaguchhi ◽  
W. Kondo ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Yttria Stabilized Zirconia ◽  
The Other ◽  
Pyrolysis Process ◽  
Polycrystalline Films ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Grain Alignment ◽  
X Ray ◽  
Heat Treated

ABSTRACTThe films of La0.8Sr0.2MnO3 (LSMO) were prepared on single-crystal SrTiO3(100) and polycrystalline yttria-stabilized zirconia (YSZ) substrates by dipping-pyrolysis process using metal naphthenates as starting materials. The crystallinity, grain alignment, morphology and electric properties of the films were compared. Epitaxial films were found to grow on SrTiO3, heat-treated at 1200°C, by x-ray diffraction, and to exhibit very smooth surfaces by SEM and AFM observations. On the other hand, the surfaces of the polycrystalline films grown on YSZ consisted of round-shaped LSMO grains. The resistivity of the epitaxial films was about two orders of magnitude lower than that of the polycrystalline films prepared under the same conditions. Preparation of epitaxial LSMO films on SrTiO3(110) is also presented.

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