Growth and Characterization of Pb-Based Ferroelectric Oxide Thin Films by Mocvd

1995 ◽  
Vol 401 ◽  
Author(s):  
Masaru Shimizu ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Memory Device ◽  
Initial Growth ◽  
Epitaxial Relationship ◽  
Pzt Thin Films ◽  
Atomic Force ◽  
Device Applications ◽  
Switching Characteristics ◽  
Plzt Thin Films ◽  
Relationship Of

AbstractUsing the MOCVD process to produce Pb(Zr, Ti)O3 (PZT) thin films, control of the film stoichiometry and crystalline phase was achieved. The PZT films obtained showed good step coverage, 67%. Uniform PZT and PLZT thin films with a variation of film thickness of less than ±1.5% were successfully obtained on a 6–8 inch silicon wafer. For the evaluation of the crystallinity and epitaxial relationship of the PZT thin films, the total reflection X-ray diffraction (TRXD) method was used for the first time. Using TRXD, the in-plane orientations of PZT and Pt in PZT/Pt/MgO were evaluated. The growth mechanism of PbTiO3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM). The switching characteristics of PZT capacitors using Ir and IrO2 electrodes for memory device applications were also investigated and a PZT capacitor with no fatigue up to a switching cycle of 1011 was obtained.

Preparation of epitaxial SrBi2Nb2O9 and SrBi2Ta2O9 thin films by the coating-pyrolysis process

1999 ◽  
Vol 14 (7) ◽  
pp. 3090-3095 ◽  
Author(s):  
T. Nagahama ◽  
T. Manabe ◽  
I. Yamaguchi ◽  
T. Kumagai ◽  
S. Mizuta ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Films ◽  
Yttria Stabilized Zirconia ◽  
Pyrolysis Process ◽  
Stabilized Zirconia ◽  
Epitaxial Relationship ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Relationship Of

Epitaxial and polycrystalline thin films of bismuth layer-structured ferroelectrics, SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT), were prepared on single-crystal SrTiO3(001) and polycrystalline yttria-stabilized zirconia substrates, respectively, by the coating-pyrolysis process. The epitaxial relationship of the films and substrates was SBN, SBT (001)//SrTiO3(001) and SBN, SBT [100]//SrTiO3[100],[010], where pseudotetragonal indices were adopted for SBN and SBT. The lattices of the epitaxial films were found to be slightly strained owing to stress from the substrate. Atomic force microscopy observations showed that the epitaxial films as well as polycrystalline films consisted of round-shaped, islandlike grains of submicrometer size.

MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

1994 ◽  
Vol 361 ◽  
Author(s):  
Masaru Shimizu ◽  
Tadashi Shiosaki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Crystalline Structure ◽  
Scaling Up ◽  
Memory Device ◽  
Processing Temperature ◽  
Pzt Films ◽  
Device Applications ◽  
Fatigue Characteristics ◽  
Plzt Thin Films

ABSTRACTThe advantages of MOCVD for the growth of Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were discussed, with emphasis on the controllability of film composition, crystalline structure and electrical properties. The possibilities of lowering the processing temperature and scaling up the process to commercial-based production were investigated. The preparation of PZT films and electrodes with a specific focus on improving the I-V and fatigue characteristics was also investigated.

High-resolution transmission electron microscopic investigations of molybdenum thin films on faceted α-Al2O3

2005 ◽  
Vol 38 (2) ◽  
pp. 260-265 ◽  
Author(s):  
Leonore Wiehl ◽  
Jens Oster ◽  
Michael Huth
Keyword(s):  
High Resolution ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Α Al2o3 ◽  
Relationship Of

Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundummsurface was determined.

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

Optical Waveguides Using Epitaxial Bi4Ti3O12 Thin Films on MgO with CeO2 Cladding Layers

1995 ◽  
Vol 401 ◽  
Author(s):  
William Jo ◽  
T. W. Noh ◽  
Y. T. Byun ◽  
S. H. Kim
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Near Field ◽  
Single Mode ◽  
Field Pattern ◽  
X Ray Diffraction ◽  
Ion Milling ◽  
Epitaxial Relationship ◽  
Relationship Of ◽  
Cladding Layers

AbstractCeO2 thin films were grown on MgO(001) single-crystal substrates by pulsed laser deposition. The CeO2 thin films were used as a cladding layer of a Bi4Ti3O12 thin film waveguide. Structural properties of the BTO/CeO2/MgO heterostructures were investigated using x-ray diffraction techniques. An epitaxial relationship of BTO(001)//CeO2(001)// MgO(001) and BTO[100]//CeO2[100]//MgO[001] was confirmed. From the epitaxial heterostructure, a ridge waveguide was fabricated by photolithographic and ion-milling techniques. An single-mode near-field pattern was observed using an end-fire coupling method.

Two conductive mechanisms in LaMnO3 thin film: Adiabatic and nonadiabatic small polaronic hopping

2021 ◽  
pp. 2150310
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Huan Zheng ◽  
Jing Wang ◽  
Hao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Theoretical Models ◽  
Magnetic Phase Transitions ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
Reciprocal Space Mapping ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane

We have presented the structural, surface morphology, magnetic and resistivity data for perovskite LaMnO3 epitaxial thin films which are fabricated on well-oriented (001) LaAlO3 substrates by pulsed laser deposition technique. X-ray diffraction [Formula: see text]–[Formula: see text] linear scans and reciprocal space mapping measurement confirm that the out-of-plane and in-plane epitaxial relationship are LMO(001)/LAO(001) and LMO(110)/LAO(110), respectively. Surface roughness determined by atomic force microscopy was no more than 0.3 nm. In the whole studied temperature range, all films only show a paramagnetic behavior instead of any magnetic phase transitions. Correspondingly, the electron transport behaviors always exhibit an insulting state as the temperature changes from high to low. However, we find that none of theoretical models can individually be used to understand their conductive mechanisms. Further studies indicated that charge carries of high and low temperature region obey adiabatic and nonadiabatic small polaronic hopping mechanisms, respectively. This finding offers new ways of exploiting the abnormal ferromagnetism in LaMnO3 multilayer thin films.

Piezoelectric PZT Thin Films on Flexible Copper-Coated Polymer Films

2010 ◽  
Vol 636-637 ◽  
pp. 392-397 ◽  
Author(s):  
Gunnar Suchaneck ◽  
O. Volkonskiy ◽  
Gerald Gerlach ◽  
Zdenek Hubička ◽  
A. Dejneka ◽  
...  
Keyword(s):  
Thin Films ◽  
Polymer Films ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Initial Growth ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Out Of Plane ◽  
Sputter Deposited

This work analyzes the processing of Pb(Zr,Ti)O3 (PZT) thin films directly on copper-coated polymer films. PZT thin film deposition was performed onto the metallized Kapton® films using a single RF plasma jet. In order to reduce the interaction of PZT and Cu during the initial growth stage, an ultrathin amorphous TiO2-x seeding layer was sputter-deposited prior to PZT deposition. The film texture was a mixture of (111)-oriented perovskite nanocrystals, rutile and pyrochlore. Topography and piezoelectric in-plane and out-of-plane response of the films were evaluated using a commercial AFM adapted for piezoforce measurements. The as-deposited films were self-polarized with polarization pointing at the surface of the sample. Polarization was switchable and a piezoelectric hysteresis was obtained.

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