Morphology and gas barrier properties of thin SiOxcoatings on polycarbonate: Correlations with plasma-enhanced chemical vapor deposition conditions

2000 ◽  
Vol 15 (3) ◽  
pp. 704-717 ◽  
Author(s):  
Ahmet G. Erlat ◽  
Bo-Chy Wang ◽  
Richard J. Spontak ◽  
Yelena Tropsha ◽  
Kevin D. Mar ◽  
...  

Plasma-enhanced chemical vapor deposition of SiOx coatings on thermoplastics provides a viable route for production of transparent composite materials with high fracture toughness and high gas barrier properties, which are important considerations in the food packaging and biomedical device industries. By examining several series of systematically varied SiOx/polycarbonate composites, we have identified design correlations between coating characteristics (thickness, density, surface roughness, and O2 transmission) and deposition conditions (time, power, pressure, and flow rates). Of particular interest is the observation that the thermal activation energy for O2 permeation through these composites increases (by up to 17 kJ/mol) as their barrier efficacy increases.

2019 ◽  
Vol 19 (1) ◽  
pp. 47 ◽  
Author(s):  
Myat Kyaw ◽  
Shinsuki Mori ◽  
Nathaniel Dugos ◽  
Susan Roces ◽  
Arnel Beltran ◽  
...  

Polyindene (PIn) membrane was fabricated onto a zeolite 5A substrate by using plasma-enhanced chemical vapor deposition (PECVD) at low temperature. Membrane characterization was done by taking Scanning Electron Microscopy (SEM) and FT-IR measurements and the new peak was found in the plasma-derived PIn film. Membrane performance was analyzed by checking permeability of pure gases (H2, N2, and CO2) through the membrane. PECVD-derived PIn membrane showed high gas barrier properties and selectivities of 8.2 and 4.0 for H2/CO2 and H2/N2, respectively, at room temperature


2011 ◽  
Vol 519 (14) ◽  
pp. 4479-4482 ◽  
Author(s):  
D.A. Spee ◽  
R. Bakker ◽  
C.H.M. van der Werf ◽  
M.J. van Steenbergen ◽  
J.K. Rath ◽  
...  

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.


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