Novel epitaxial growth of barium titanate thin films by electrodeposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2583-2586 ◽  
Author(s):  
Jun Tamaki ◽  
Gregory K. L. Goh ◽  
Fred F. Lange
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Counter Electrode ◽  
Epitaxial Films ◽  
Buffer Layers

Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.

scholarly journals Epitaxial Growth of Co Thin Films on SrTiO3 Single-Crystal Substrates

2010 ◽  
Vol 34 (2) ◽  
pp. 78-91 ◽  
Author(s):  
O. Yabuhara ◽  
Y. Nukaga ◽  
M. Ohtake ◽  
F. Kirino ◽  
M. Futamoto
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth

Single-crystal barium titanate thin films by ion slicing

2003 ◽  
Vol 82 (4) ◽  
pp. 616-618 ◽  
Author(s):  
T. Izuhara ◽  
I.-L. Gheorma ◽  
R. M. Osgood ◽  
A. N. Roy ◽  
H. Bakhru ◽  
...  
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Single Crystal

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Epitaxial growth of graphene thin films on single crystal metal surfaces

2011 ◽  
pp. 228-255 ◽  
Author(s):  
J. Coraux ◽  
A.T. N’Diaye ◽  
C. Busse ◽  
T. Michely
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Metal Surfaces

Two-step epitaxial growth of NbON (100) thin films on rutile-type TiO2 (101) substrates and reduction of residual carrier concentration by RF reactive sputtering

CrystEngComm ◽  
2019 ◽  
Vol 21 (23) ◽  
pp. 3552-3556 ◽  
Author(s):  
Ryosuke Kikuchi ◽  
Toru Nakamura ◽  
Yasushi Kaneko ◽  
Kazuhito Hato
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Reactive Sputtering ◽  
Epitaxial Films ◽  
Step Growth

Two-step growth makes it possible to grow NbON epitaxial films and minimize anion-related defects in the NbON films.

Epitaxial growth of Cu-Ni Single Crystal Alloys and Multilayers by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Substrate Material ◽  
High Reactivity ◽  
Lattice Match ◽  
Single Crystal Films ◽  
Crystal Films

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.

scholarly journals Epitaxial growth and magnetic/transport properties of La0.7Sr0.3MnO3 thin films grown on SrTiO3 with optimized growth conditions

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31327-31332 ◽  
Author(s):  
K. Wang ◽  
M. H. Tang ◽  
Y. Xiong ◽  
G. Li ◽  
Y. G. Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Colossal Magnetoresistive ◽  
Magnetic Transport

Epitaxial growth of colossal magnetoresistive thin films of La0.7Sr0.3MnO3 (LSMO) has been achieved on TiO2-terminated (001) SrTiO3 (STO) single-crystal substrates using PLD (pulsed laser deposition).

Epitaxial Growth of Metastable hcp-Ni and hcp-NiFe Thin Films on Au(100)$_{\text{fcc}}$ Single-Crystal Underlayers and Their Structure Characterization

2011 ◽  
Vol 50 (10) ◽  
pp. 103001 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Yoichi Sato ◽  
Jumpei Higuchi ◽  
Takahiro Tanaka ◽  
Fumiyoshi Kirino ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Structure Characterization
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