Combined out-of-plane and in-plane texture control in thin films using ion beam assisted deposition

2001 ◽  
Vol 16 (1) ◽  
pp. 210-216 ◽  
Author(s):  
L. Dong ◽  
D. J. Srolovitz ◽  
G. S. Was ◽  
Q. Zhao ◽  
A. D. Rollett
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Ion Beam ◽  
Ion Beams ◽  
High Symmetry ◽  
Complete Control ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Out Of Plane

Complete control of the texture of a film during growth requires the ability to determine the in-plane and out-of-plane texture simultaneously. We present both computer simulation and experimental evidence for the simultaneous establishment of out-of-plane and in-plane texture during ion beam assisted deposition of aluminum. Channeling along 〈110〉 directions (60° from the normal) creates a {220} out-of-plane orientation rather than the thermodynamically preferred {111} orientation. The ion beam also aligned 〈220〉 directions within the plane of the film. Measured x-ray pole figures confirmed the presence of a strong out-of-plane texture and the presence of two main, twin-related, in-plane texture components. We theoretically demonstrated that it is impossible to completely control both the in-plane and out-of-plane texture with a single ion beam in high-symmetry crystals and two ion beams must be employed to ensure complete texture control.

High-Jc YBCO Conductors Fabricated By Magnetron Deposition

2000 ◽  
Vol 616 ◽  
Author(s):  
N. Savvides ◽  
S. Gnanarajan ◽  
J. Herrmann ◽  
A. Thorley ◽  
A. Katsaros ◽  
...  
Keyword(s):  
Ion Beam ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Similar Degree ◽  
Magnetron Deposition ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Pole Figures ◽  
Ybco Tapes ◽  
Biaxial Alignment

AbstractSuperconducting YBCO/YSZ/Hastelloy tapes or coated conductors were fabricated by combining ion beam assisted deposition (ILBAD) and magnetron sputtering techniques. The degree of biaxial alignment of the YSZ buffer layers and the epitaxial YBCO films was determined from x-ray pole figures and ø-scans. The best YSZ buffer layers had FWHFM δø= 7°- 10°. The corresponding YBCO tapes achieved a similar degree of biaxial alignment and high critical current density, Jc(77K,0T) = (0.9 – l.25)×106 A cm−2.

In-Plane Magnetic and Structural Anisotropies in NI and FE Films Produced by Ion-Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
W. A. Lewis ◽  
M. Farle ◽  
B. M. Clemens ◽  
R. L. White
Keyword(s):  
Ion Beam ◽  
Anisotropy Field ◽  
Angle Of Incidence ◽  
Induced Anisotropy ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Beam Sputtering

ABSTRACTWe report the results of our microstructural investigations into the origin of in-plane uniaxial magnetic anisotropies induced in Ni and Fe thin films by low energy ion beam assisted deposition. 1000 Å films were prepared by ion beam sputtering onto amorphous silica substrates under simultaneous bombardment by 100 eV Xe+ ions under an oblique angle of incidence. The induced anisotropy is studied as a function of ion-to-adsorbate atom arrival ratio, R, from values of 0 to 0.35. The maximum anisotropy field is 150 Oe for Ni and 80 Oe for Fe, but their hard axes are oriented orthogonal to each other. Asymmetric x-ray diffraction is employed to study both in-plane and out-of-plane lattice spacings and crystallographic orientation. In agreement with previous work, we find evidence of a anisotropic in-plane strain of magnitude 0.2-0.5%. In all films, the direction perpendicular to the ion bombardment is compressed relative to parallel. The uniaxial magnetic anisotropy is correlated with this in-plane anisotropic strain using a simple magnetoelastic model.

scholarly journals Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

2020 ◽  
Vol 11 ◽  
pp. 1693-1703
Author(s):  
Serguei Chiriaev ◽  
Luciana Tavares ◽  
Vadzim Adashkevich ◽  
Arkadiusz J Goszczak ◽  
Horst-Günter Rubahn
Keyword(s):  
Thin Films ◽  
Methyl Methacrylate ◽  
Plane Surface ◽  
Ion Beam ◽  
Mechanical Strain ◽  
Ion Beams ◽  
Polymer Substrate ◽  
Polymer Materials ◽  
Poly Methyl Methacrylate ◽  
Out Of Plane

This work explores a new technique for the out-of-plane patterning of metal thin films prefabricated on the surface of a polymer substrate. This technique is based on an ion-beam-induced material modification in the bulk of the polymer. Effects of subsurface and surface processes on the surface morphology have been studied for three polymer materials: poly(methyl methacrylate), polycarbonate, and polydimethylsiloxane, by using focused ion beam irradiation with He+, Ne+, and Ga+. Thin films of a Pt60Pd40 alloy and of pristine Au were used to compare the patterning of thin films with different microstructures. We show that the height of Pt60Pd40 thin films deposited onto poly(methyl methacrylate) and polycarbonate substrates can be patterned by He+ ion beams with ultrahigh precision (nanometers) while preserving in-plane features, at the nanoscale, of the pre-deposited films. Ion irradiation of the Au-coated samples results in delamination, bulging, and perforation of the Au film, which is attributed to the accumulation of gases from radiolysis at the film–substrate interface. The irradiation with Ne+ and Ga+ ions destroys the films and roughens the surface due to dominating sputtering processes. A very different behavior, resulting in the formation of complex, multiscale 3D patterns, is observed for polydimethylsiloxane samples. The roles of the metal film structure, elastic properties of the polymer substrate, and irradiation-induced mechanical strain in the patterning process are elaborated and discussed.

Epitaxial Planarization Using Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Paul C. McIntyre ◽  
Michael J. Cima ◽  
Jonathan Z. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Pole Figure ◽  
Ion Beam ◽  
Normal Incidence ◽  
X Ray Diffraction ◽  
Deposition Rates ◽  
Atom Ratio ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Beam Parameters

ABSTRACTCeO2 thin films have been deposited on patterned (100) LaAlO3 substrates using ion beam assisted deposition (IBAD) with ion beam energies between 350 and 500eV. Deposition temperatures were varied between 400°C and 600°C and deposition rates from 0.2Å/s to 1.2Å/s. Both normal and off-normal incidence ion bombardment have been studied. A trend towards planarization is observed when the ion to atom ratio is adjusted to obtain the proper degree of etching. The planarization mechanism for normal incidence bombardment appears to be similar to that previously observed for bias sputtering. X-ray diffraction shows that an initial layer of evaporated epitaxial CeO2 is required for continued epitaxial development during IBAD processing. The extent of planarization via off-normal ion incidence can be related to the direction of the ion beam with respect to the patterned features. X-ray pole figure measurements show that these films possess an in-plane orientation that is directly related to the ion beam parameters.

Ion Beam Deposition of Boron-Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
J.H. Edgar ◽  
C.R. Eddy ◽  
J.A. Sprague ◽  
B.D. Sartwell
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Electron Spectroscopy ◽  
Boron Content ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Ion Beam Assisted Deposition ◽  
Beam Deposition

AbstractAnalysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.

scholarly journals Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

2020 ◽  
Author(s):  
Serguei Chiriaev ◽  
Luciana Tavares ◽  
Vadzim Adashkevich ◽  
Arkadiusz J Goszczak ◽  
Horst-Guenter Rubahn
Keyword(s):  
Thin Films ◽  
Plane Surface ◽  
Ion Beam ◽  
Mechanical Strain ◽  
Film Structure ◽  
Ion Beams ◽  
Polymer Substrate ◽  
Polymer Materials ◽  
Focused Ion Beams ◽  
Out Of Plane

Abstract This work explores a new technique for the out-of-plane patterning of nanostructures prefabricated on the surface of a polymer substrate. The technique is based on ion-beam-induced material modification in the bulk of a polymer. Effects of subsurface and surface processes on the surface morphology have been studied for three polymer materials (Polymethylmethacrylate, Polycarbonate and Polydimethylsiloxane) by using irradiations with He+, Ne+ and Ga+ focused ion beams. Thin films of a Pt60Pd40 -alloy and of pristine Au were used to mimic nanostructured thin films. We show that the height of thin Pt60Pd40 films deposited on Polymethylmethacrylate and Polycarbonate substrates can be patterned by He+ ion beam with nanometer precision while preserving nanometric features of the pre-deposited films. Ion irradiation of the Au-coated samples results in Au-film delamination, bulging and perforation, which is attributed to accumulation of radiolysis gases at the film-substrate interface. The irradiation with Ne+and Ga+ ions destroys the films and roughens the surface due to dominating sputtering processes. A very different behavior, resulting in the formation of complex, multiscale 3D- patterns, is observed for Polydimethylsiloxane samples. The roles of the metal film structure, elastic properties of the polymer substrate and irradiation-induced mechanical strain in the patterning process are elaborated and discussed.

Plasmonic properties of titanium nitride thin films prepared by ion beam assisted deposition

2016 ◽  
Vol 185 ◽  
pp. 295-298 ◽  
Author(s):  
Lin-Ao Zhang ◽  
Hao-Nan Liu ◽  
Xiao-Xia Suo ◽  
Shuo Tong ◽  
Ying-Lan Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Ion-Beam Assist Nano-Texturing of Films

2007 ◽  
Vol 1020 ◽  
Author(s):  
Vladimir Matias ◽  
Chris Sheehan ◽  
Alp T. Findikoglu
Keyword(s):  
Experimental Design ◽  
Single Crystal ◽  
Ion Beam ◽  
Fabrication Method ◽  
Polycrystalline Metal ◽  
Tape Transport ◽  
Homoepitaxial Growth ◽  
Ion Beam Assisted Deposition ◽  
High Throughput Experimentation ◽  
Out Of Plane

AbstractWe present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

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