Epitaxial Planarization Using Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Paul C. McIntyre ◽  
Michael J. Cima ◽  
Jonathan Z. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Pole Figure ◽  
Ion Beam ◽  
Normal Incidence ◽  
X Ray Diffraction ◽  
Deposition Rates ◽  
Atom Ratio ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Beam Parameters

ABSTRACTCeO2 thin films have been deposited on patterned (100) LaAlO3 substrates using ion beam assisted deposition (IBAD) with ion beam energies between 350 and 500eV. Deposition temperatures were varied between 400°C and 600°C and deposition rates from 0.2Å/s to 1.2Å/s. Both normal and off-normal incidence ion bombardment have been studied. A trend towards planarization is observed when the ion to atom ratio is adjusted to obtain the proper degree of etching. The planarization mechanism for normal incidence bombardment appears to be similar to that previously observed for bias sputtering. X-ray diffraction shows that an initial layer of evaporated epitaxial CeO2 is required for continued epitaxial development during IBAD processing. The extent of planarization via off-normal ion incidence can be related to the direction of the ion beam with respect to the patterned features. X-ray pole figure measurements show that these films possess an in-plane orientation that is directly related to the ion beam parameters.

Ion Beam Deposition of Boron-Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
J.H. Edgar ◽  
C.R. Eddy ◽  
J.A. Sprague ◽  
B.D. Sartwell
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Electron Spectroscopy ◽  
Boron Content ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Ion Beam Assisted Deposition ◽  
Beam Deposition

AbstractAnalysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Roughening of Au(111) Surfaces During Ion Beam Erosion: A Scanning Tunneling Microscope and X-Ray Diffraction Study

1999 ◽  
Vol 570 ◽  
Author(s):  
A. Judy ◽  
M.V. Ramana Murty ◽  
E. Butler ◽  
J. Pomeroy ◽  
B.H. Cooper ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Normal Incidence ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Tunneling Microscopy ◽  
X Ray ◽  
Glancing Angle

ABSTRACTUsing Scanning Tunneling Microscopy(STM) and X-ray diffraction(XRD), we have studied the development of surface roughness on Au(111) during 500eV Ar+ ion irradiation at different angles. During normal incidence erosion the surface roughens and pattern formation occurs. The surface morphology is a mixture of mounds and pits superimposed onto a larger structure of channels and valleys. The characteristic spacing between features grows with a power law behavior t27, where t is the amount of time the sample was irradiated, in agreement with previous measurements[l]. At glancing angles, erosion proceeds smoothly, but not in layer-by-layer fashion. Finally, a combination of glancing angle and normal incidence erosion is used to create a rippled morphology

In-Plane Magnetic and Structural Anisotropies in NI and FE Films Produced by Ion-Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
W. A. Lewis ◽  
M. Farle ◽  
B. M. Clemens ◽  
R. L. White
Keyword(s):  
Ion Beam ◽  
Anisotropy Field ◽  
Angle Of Incidence ◽  
Induced Anisotropy ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Beam Sputtering

ABSTRACTWe report the results of our microstructural investigations into the origin of in-plane uniaxial magnetic anisotropies induced in Ni and Fe thin films by low energy ion beam assisted deposition. 1000 Å films were prepared by ion beam sputtering onto amorphous silica substrates under simultaneous bombardment by 100 eV Xe+ ions under an oblique angle of incidence. The induced anisotropy is studied as a function of ion-to-adsorbate atom arrival ratio, R, from values of 0 to 0.35. The maximum anisotropy field is 150 Oe for Ni and 80 Oe for Fe, but their hard axes are oriented orthogonal to each other. Asymmetric x-ray diffraction is employed to study both in-plane and out-of-plane lattice spacings and crystallographic orientation. In agreement with previous work, we find evidence of a anisotropic in-plane strain of magnitude 0.2-0.5%. In all films, the direction perpendicular to the ion bombardment is compressed relative to parallel. The uniaxial magnetic anisotropy is correlated with this in-plane anisotropic strain using a simple magnetoelastic model.

Processing Effects on the Contact Resistance of Ion Beam Sputtered Silver on Highly Oriented C-Axis and A-Axis YBCO Films

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Narbutovskih ◽  
J. Rosner ◽  
P. Merchant ◽  
R. D. Jacowitz
Keyword(s):  
Thin Films ◽  
Contact Resistance ◽  
Ion Beam ◽  
Substrate Surface ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Ion Beam Etching ◽  
X Ray ◽  
Processing Effects

ABSTRACTThis paper reports on the processes used to achieve low resistance silver contacts to YBCO thin films that have either c-axis or a-axis orientation. Characterization by x-ray diffraction and TEM verified that these films are highly oriented with either the a or the c axis oriented perpendicular to the substrate surface. TEM examination of some of the Ag/YBCO interfaces reveals the presence of an amorphous layer. We will describe the effects of ion beam etching and RTA alloying on the contact resistivity for both orientations.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

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