New approach to depositing yttria-stabilized zirconia buffer layers for coated conductors

2003 ◽  
Vol 18 (4) ◽  
pp. 919-928 ◽  
Author(s):  
S. Sambasivan ◽  
I. Kim ◽  
S. Barnett ◽  
M. A. Zurbuchen ◽  
J. Ji ◽  
...  
Keyword(s):  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Significant Advance ◽  
Nitride Film ◽  
Stabilized Zirconia ◽  
New Approach ◽  
Biaxial Texture ◽  
Current Densities ◽  
Sputter Deposited

A new approach for the production of yttria-stabilized zirconia (YSZ) oxide buffer layers directly on metal rolling-assisted biaxially textured substrates (RABiTS) is described in this paper. This represents a significant advance over existing techniques and avoids the need for complicated steps to avoid substrate oxidation during direct deposition of oxides. Current densities of about 1 MA/cm2 have been achieved for YBa2Cu3O7-δ layers on the YSZ buffer, with an intermediate CeO2 layer. The process consists of reactive sputtering of a YxZr1−xN film directly on the RABiTS, which adopts its biaxial texture. This nitride film is then converted to YSZ via a thermal oxidation step. The YSZ films retain the texture of the nitride film (and of the RABiTS) through local syntaxy. In many cases, YSZ films exhibit improved biaxial texture over that of the RABiTS substrate. Nitrides can be sputter deposited at much higher rates relative to oxides, making the approach industrially scalable and economical.

The microstructure of continuously processed Yba2Cu3Oy coated conductors with underlying CeO2 and ion-beam-assisted yttria-stabilized zirconia buffer layers

2000 ◽  
Vol 15 (5) ◽  
pp. 1110-1119 ◽  
Author(s):  
T. G. Holesinger ◽  
S. R. Foltyn ◽  
P. N. Arendt ◽  
H. Kung ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Ion Beam ◽  
Misfit Strain ◽  
Critical Currents ◽  
Coated Conductors ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Inconel 625 ◽  
Microstructural Development ◽  
Stabilized Zirconia

The microstructural development of YBa2Cu3Oy (Y-123) coated conductors based on the ion-beam-assisted deposition (IBAD) of yttria-stabilized zirconia (YSZ) to produce a biaxially textured template is presented. The architecture of the conductors was Y-123/CeO2/IBAD YSZ/Inconel 625. A continuous and passivating Cr2O3 layer forms between the YSZ layer and the Inconel substrate. CeO2 and Y-123 are closely lattice-matched, and misfit strain is accommodated at the YSZ/CeO2 interface. Localized reactions between the Y-123 film and the CeO2 buffer layer result in the formation of BaCeO3, YCuO2, and CuO. The positive volume change that occurs from the interfacial reaction may act as a kinetic barrier that limits the extent of the reaction. Excess copper and yttrium generated by the interfacial reaction appear to diffuse along grain boundaries and intercalate into Y-123 grains as single layers of the Y-247, Y-248, or Y-224 phases. The interfacial reactions do not preclude the attainment of high critical currents (Ic) and current densities (Jc) in these films nor do they affect to any appreciable extent the nucleation and alignment of the Y-123 film.

Biaxially textured yttria stabilized zirconia buffer layers on rotating cylindrical surfaces

1997 ◽  
Vol 12 (3) ◽  
pp. 593-595 ◽  
Author(s):  
J. Hoffmann ◽  
J. Dzick ◽  
J. Wiesmann ◽  
K. Heinemann ◽  
F. Garcia-Moreno ◽  
...  
Keyword(s):  
Full Width Half Maximum ◽  
Ion Beam ◽  
Large Fraction ◽  
Rotation Velocity ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Cylinder Surface ◽  
Stabilized Zirconia ◽  
Ion Beam Assisted Deposition ◽  
Current Densities

Biaxially textured yttria stabilized zirconia (YSZ) buffer layers are prepared on rotating cylindrical surfaces by an ion-beam-assisted deposition (IBAD) process. A large fraction of the cylinder surface can be coated at the same time, resulting in an effective deposition rate of 40 nm/h for the whole tube circumference (diameter of the tube 12 mm). The in-plane alignment depends on the total film thickness and the rotation velocity. The best in-plane textures achieved so far with a full width half maximum (FWHM) value of 27° are sufficient for the preparation of YbaCuO films with critical current densities above 105 A cm−2 at 77 K and self-fields.

Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on (100)Si Using Textured YBa2Cu3O7−δ and Yttria-Stabilized Zirconia Buffer Layers by Laser Physical Vapor Deposition Technique

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
A. Morimoto ◽  
V.N. Shukla ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Processing Parameters ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Vapor Deposition Technique ◽  
Pzt Films ◽  
Physical Vapor Deposition Technique

ABSTRACTWe have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 nanoseconds). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using X-ray diffraction, high-resolution transmission electron microscopy and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9X10−4 torr) at 775°C on (001)Si substrate having <001>YSZ// <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mtorr) at 650°C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4–0.6 torr, respectively. The laser fluence to deposit this multistructure was 2.5–5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coersive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

The RABiTS Approach: Using Rolling-Assisted Biaxially Textured Substrates for High-Performance YBCO Superconductors

MRS Bulletin ◽  
2004 ◽  
Vol 29 (8) ◽  
pp. 552-561 ◽  
Author(s):  
Amit Goyal ◽  
M. Parans Paranthaman ◽  
U. Schoop
Keyword(s):  
Critical Current ◽  
High Performance ◽  
Thermomechanical Processing ◽  
Cost Effective ◽  
Epitaxial Films ◽  
Buffer Layers ◽  
Ybco Films ◽  
Biaxial Texture ◽  
Ybco Superconductors ◽  
Current Densities

AbstractThis article provides an overview of the fabrication of epitaxial, biaxially aligned buffer layers on rolling-assisted biaxially textured substrates (RABiTS) as templates for YBCO films carrying high critical current densities.The RABiTS technique uses standard thermomechanical processing to obtain long lengths of flexible, biaxially oriented substrates with smooth surfaces.The strong biaxial texture of the metal is conferred to the superconductor by the deposition of intermediate metal and/or oxide layers that serve both as a chemical and a structural buffer.Epitaxial YBCO films with critical current densities exceeding 3 106A/cm2at 77K in self-field have been grown on RABiTS using a variety of techniques and demonstrate magnetic-field-dependent critical current values that are similar to those of epitaxial films on single-crystal ceramic substrates.The RABiTS architecture most commonly used consists of a CeO2 (sputtered)/YSZ (sputtered)/Y203 (e-beam)/Ni-W alloy.The desired texture of the base metal has been achieved in 100 m lengths and 10cm widths.Scaleable and cost-effective techniques are also being pursued to deposit the epitaxial multilayers.The results discussed here demonstrate that this technique is a viable route for the fabrication of long lengths of high-critical-current-density wire capable of carrying high currents in magnetic fields and at temperatures accessible by cooling with relatively inexpensive liquid nitrogen (up through the 77K range).

YBa2Cu3O7thin films grown on sapphire with epitaxial yttria‐stabilized zirconia buffer layers

1992 ◽  
Vol 61 (20) ◽  
pp. 2412-2413 ◽  
Author(s):  
L. F. Chen ◽  
P. F. Chen ◽  
L. Li ◽  
S. L. Li ◽  
X. N. Jing ◽  
...  
Keyword(s):  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia
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