Low-temperature metalorganic chemical vapor deposition of Al2O3 for advanced complementary metal-oxide semiconductor gate dielectric applications

2003 ◽  
Vol 18 (8) ◽  
pp. 1868-1876 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Guillermo Nuesca ◽  
John J. Sullivan ◽  
Eric T. Eisenbraun ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Nuclear Reaction Analysis ◽  
X Ray ◽  
Metalorganic Chemical

A low-temperature metalorganic chemical vapor deposition process was developed and optimized, using a design of experiments approach, for the growth of ultrathin aluminum oxide (Al2O3) as a potential gate dielectric in emerging semiconductor device applications. The process used the aluminum β-diketonate metalorganic precursor [aluminum(III) 2,4-pentanedionate] and water as, respectively, the metal and oxygen source reactants to grow Al2O3 films over a temperature range from 250 to 450 °C. The resulting films were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction measurements, Rutherford backscattering spectrometry, nuclear-reaction analysis for hydrogen profiling, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The as-deposited Al2O3 phase was amorphous and dense and exhibited carbon and hydrogen incorporation of, respectively, 1 and 10 at.%. Postannealing at 600 °C led to a reduction in hydrogen concentration to 1 at.%, while maintaining an amorphous Al2O3 matrix.

Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process

1995 ◽  
Vol 406 ◽  
Author(s):  
M. S. Gaffneyt ◽  
C. M. Reavesl ◽  
A. L Holmes ◽  
R. S. Smith ◽  
S. P. DenBaars
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Normal Operation ◽  
Growth Monitoring ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metalorganic Chemical

AbstractMetalorganic chemical vapor deposition (MOCVD) is a process used to manufacture electronic and optoelectronic devices that has traditionally lacked real-time growth monitoring and control. We have developed control strategies that incorporate monitors as real-time control sensors to improve MOCVD growth. An analog control system with an ultrasonic concentration monitor was used to reject bubbler concentration disturbances which exist under normal operation, during the growth of a four-period GaInAs/InP superlattice. Using X-ray diffraction, it was determined that the normally occurring concentration variations led to a wider GaInAs peak in the uncompensated growths as compared to the compensated growths, indicating that closed loop control improved GaInAs composition regulation. In further analysis of the X-ray diffraction curves, superlattice peaks were used as a measure of high crystalline quality. The compensated curve clearly displayed eight orders of satellite peaks, whereas the uncompensated curve shows little evidence of satellite peaks.

Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
D.L. Kaiser ◽  
M.D. Vaudin ◽  
L.D. Rotter ◽  
Z.L. Wang ◽  
J.P. Cline ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electron Diffraction ◽  
Harmonic Generation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Second Harmonic ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

Nanocrystalline ZrO2thin films on silicon fabricated by pulsed-pressure metalorganic chemical vapor deposition (PP-MOCVD)

2008 ◽  
Vol 23 (8) ◽  
pp. 2202-2211 ◽  
Author(s):  
L. Ramirez ◽  
M.L. Mecartney ◽  
S.P. Krumdieck
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Tetragonal Zirconia ◽  
Chemical Vapor ◽  
Optimal Growth ◽  
Stages Of Growth ◽  
Average Grain Size ◽  
Metalorganic Chemical

ZrO2films deposited on silicon (100) substrates using pulsed-pressure metalorganic chemical vapor deposition (PP-MOCVD) with zirconium n-propoxide (ZnP) Zr(OC3H7)4were dense and fully crystalline for substrate temperatures of 500 to 700 °C. Film thicknesses were 40 to 815 nm thick, measured after growth using ellipsometry and scanning electron microscopy (SEM). The growth rate was between 0.1 μm/h at 500 °C and 1 μm/h at 700 °C. Transmission electron microscopy (TEM) and x-ray diffraction (XRD) indicated an average grain size of 10 to 20 nm. There was a random orientation of cubic/tetragonal zirconia at the highest experimental temperature of 700 °C. SEM and atomic force microscopy (AFM) was used to characterize island height of discontinuous films in the initial stages of growth where defects in the substrate caused preferred nucleation of isolated particles. At later stages of growth, the average surface roughness of continuous films was 30 nm, which revealed a more uniform growth had developed. A growth model is proposed, and optimal growth conditions are suggested for targeted microstructures of ZrO2films.

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