Preparation of ZnO by a nearby vaporizing chemical vapor deposition method

2003 ◽  
Vol 18 (9) ◽  
pp. 2029-2032 ◽  
Author(s):  
Junichi Nishino ◽  
Yoshio Nosaka
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Source Material ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Source Surface ◽  
Deposition Method ◽  
Zno Film

Zinc oxide (ZnO) films were prepared by a nearby vaporizing chemical vapor deposition method using bis(2,4-pentanedionato)zinc as a source material. The deposition rate increased exponentially from 0.58 to 147 nm min−1 with increasing substrate temperature (Ts). The highest preferred orientation to the c axis was obtained under the conditions that the distance between substrate and source surface was 5.0 mm, and the Ts was 300 °C. When we used a sapphire (0001) substrate, an epitaxial ZnO film could be deposited on this condition.

Tin Dioxide Films Prepared by a Rapid Chemical Vapor Deposition Method

1994 ◽  
Vol 363 ◽  
Author(s):  
Junichi Nishino ◽  
Shigeo Ohshio ◽  
Hidetoshi Saitoh ◽  
Kiichiro Kamata
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Tin Dioxide ◽  
Chemical Vapor ◽  
Source Material ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Si Substrates ◽  
Xrd Patterns

AbstractA rapid chemical vapor deposition method was studied for the preparation of tin dioxide films. The films were prepared under atmospheric-pressure on fused quartz and Si substrates at 200° to 600°C using bis(2,4-pentanedionato)tin as a source material. SnO2 films obtained at 300° to 600°C had polycrystalline rutile structures, while the film deposited at 200°C was amorphous judging from the XRD patterns. The deposition rate of SnO2 increased with increasing substrate temperature and vaporization temperature of the source material. The maximum deposition rate was 440 nm min−1. The transmittance of SnO2, deposited at Ts = 600°C, was more than 70% in the wavelength range 400–800 nm.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

Lasing of CdSe/SiO2 nanocables synthesized by the facile chemical vapor deposition method

Nanoscale ◽  
2011 ◽  
Vol 3 (8) ◽  
pp. 3072 ◽  
Author(s):  
Yu Ye ◽  
Yaoguang Ma ◽  
Song Yue ◽  
Lun Dai ◽  
Hu Meng ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method
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