Tensile Creep Behavior in Lutetia-doped Silicon Nitride Ceramics

2005 ◽  
Vol 20 (8) ◽  
pp. 2213-2217 ◽  
Author(s):  
Toshiyuki Nishimura ◽  
Naoto Hirosaki ◽  
Yoshinobu Yamamoto ◽  
Yorinobu Takigawa ◽  
Jian-Wu Cao
Keyword(s):  
Silicon Nitride ◽  
Strain Rate ◽  
Applied Stress ◽  
Creep Behavior ◽  
Stress Rupture ◽  
Tensile Creep ◽  
Time To Failure ◽  
Transmission Electron ◽  
Nitride Ceramics ◽  
Minimum Strain Rate

We studied tensile creep behavior in two silicon nitride ceramics, i.e., 4.8 mol% Lu2O3 (SN48) and 1.2 mol% Lu2O3 (SN12), at 1400–1500 °C under applied stress of 137–300 MPa. Time to failure of SN48 increased with decreasing applied stress and minimum strain rate. The stress–rupture parameter was 10.7 at 1400 °C and 11.4 at 1500 °C. Pore formation was confirmed in a creep-tested specimen of SN48 by transmission electron microscopy. These results suggest that SN48 was fractured by creep rupture. The minimum strain rate of SN12 was almost below the measurement system limitation at temperatures below 1500 °C. Time to failure tended to increase with decreasing applied stress. The stress–rupture parameter was 41 at 1400 °C and 73 at 1500 °C. These results suggest that SN12 was fractured by subcritical crack growth.

Microstructure and microanalysis of silicon nitride ceramics in the Y-Si-Al-O-N and Y-Si-O-N systems

1990 ◽  
Vol 48 (4) ◽  
pp. 1072-1073
Author(s):  
Michael K. Cinibulk
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
Grain Boundary Sliding ◽  
Liquid Phase Sintering ◽  
Boundary Phase ◽  
Full Density ◽  
High Temperature Strength ◽  
Transmission Electron ◽  
Structural Applications ◽  
Nitride Ceramics

Silicon nitride ceramics are among the leading candidate materials for use in structural applications at high temperatures. Due to the highly covalent nature of the Si-N bond and therefore low self-diffusivity, processing Si3N4 to full density requires the use of additives to provide a medium for liquid-phase sintering. When exposed to temperatures above ∼1000°C the resulting amorphous grain-boundary phases soften, leading to grain-boundary sliding and the eventual failure of the ceramic. The objectives of this work were to modify the grain-boundary phase composition and then attempt to devitrify the resulting intergranular phase to a refractory crystalline phase, producing a sintered Si3N4 with improved high-temperature strength and oxidation resistance. Transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy (EDS) were used to characterize these materials. This paper describes these results.

Improved creep resistance in anisotropic silicon nitride

2001 ◽  
Vol 16 (8) ◽  
pp. 2182-2185 ◽  
Author(s):  
Naoki Kondo ◽  
Yoshikazu Suzuki ◽  
Manuel E. Brito ◽  
Tatsuki Ohji
Keyword(s):  
Silicon Nitride ◽  
Creep Rate ◽  
Tensile Stress ◽  
Creep Behavior ◽  
Creep Resistance ◽  
Elevated Temperatures ◽  
Tensile Creep ◽  
Grain Alignment ◽  
Remarkable Improvement ◽  
Order Of Magnitude

Tensile creep behavior of silicon nitride with aligned rodlike grains (anisotropic silicon nitride), fabricated by superplastic forging, was investigated at elevated temperatures. Creep rate of the anisotropic silicon nitride was about 1 order of magnitude lower than that of the isotropic one (without forging). The stress sensitivities for the isotropic and anisotropic specimens at 1200 °C were 2.1 and 2.6, respectively, and that for the anisotropic specimen at 1250 °C was 3.6. The grain alignment should cause a remarkable improvement in the creep resistance when a tensile stress is applied along the alignment direction.

Influence of Grain Size on the Tensile Creep Behavior of Ytterbium-Containing Silicon Nitride

2004 ◽  
Vol 87 (3) ◽  
pp. 421-430 ◽  
Author(s):  
Sheldon M. Wiederhorn ◽  
Antonio R. Arellano Lopez ◽  
William E. Luecke ◽  
Michael J. Hoffmann ◽  
Bernard J. Hockey ◽  
...  
Keyword(s):  
Grain Size ◽  
Silicon Nitride ◽  
Creep Behavior ◽  
Tensile Creep

Creep Behavior of Improved High Temperature Silicon Nitride

2005 ◽  
Vol 287 ◽  
pp. 381-392 ◽  
Author(s):  
Sheldon M. Wiederhorn ◽  
Ralph F. Krause ◽  
František Lofaj ◽  
U. Täffner
Keyword(s):  
Silicon Nitride ◽  
Stress Exponent ◽  
Creep Behavior ◽  
Secondary Phase ◽  
Creep Mechanism ◽  
Tensile Creep ◽  
Confidence Limits ◽  
Silicon Nitrides ◽  
Critical Limit ◽  
Consistent Picture

New data are presented on the tensile creep behavior of silicon nitride sintered with Lu2O3. The data are compared with two earlier sets of data collected on the same material. The older sets gave results that are difficult to explain theoretically: a high value for the stress exponent, n=5.33, and no cavitation. The new set of data also gave no cavitation, but gave a stress exponent, n=1.81, that can be rationalized theoretically in terms of solution-precipitation creep of the silicon nitride grains. An analysis of variance showed that one of the earlier sets of data was statistically consistent with the newer set, whereas the other set of data was not. Combining the two sets of data that agreed statistically yields a consistent picture of creep with a low value of the stress exponent and no cavitation. The stress exponent for the combined set of data is n=1.87±0.48 (95 % confidence limits). The tensile creep mechanism of the silicon nitride containing Lu2O3, solution-precipitation, differs from those of other silicon nitrides, for which tensile creep has been attributed to cavitation. Enhancement of the creep resistance of the silicon nitride sintered with Lu2O3 may be a consequence of the fact that Lu2O3 produces a more deformation resistant amorphous phase at the two grain junctions, than do Y2O3 or Yb2O3. In parallel, reducing the amount of secondary phase below a critical limit, or increasing the viscosity of the two grain boundaries relative to three-grain junctions reduces the ability of the material to cavitate during creep, and forces the creep mechanism to change from cavitation to solution-precipitation.

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