EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Effect of Pb Excess Content on Microstructure and Electrical Properties of Sol Gel Derived PZT Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhan-jie Wang ◽  
Ryutaro Maeda ◽  
Kaoru Kikuchi
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Starting Solution ◽  
Pzt Films

AbstractLead zirconate titanate (PZT) thin films were fabricated by a three-step heat-treatment process which involves the addition of -10, 0 and 10 mol% excess Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron probe microanalysis (EPMA), respectively. The well-crystallized perovskite phase and the (100) preferred orientation were obtained by adding 10% excess Pb to the starting solution. It was found that PZT films to which 10% excess Pb was added had better electric properties. The remanent polarization and the coercive field of this film were 34.8 μC/cm2 and 41.7 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1600 and 0.04, respectively. Dielectric and ferroelectric properties were correlated to the microstructure of the films.

scholarly journals Local Fatigue Evaluation in PZT Thin Films with Nanoparticles by Piezoresponse Force Microscopy

2012 ◽  
Vol 2012 ◽  
pp. 1-9
Author(s):  
B. S. Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Grain Morphology ◽  
Piezoresponse Force Microscopy ◽  
Lead Zirconate ◽  
Fatigue Performance ◽  
Pzt Thin Films

Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarization behavior during fatigue in PZT films with and without nanoparticles by using very recent developed scanning piezoelectric microscopy (SPM). We show that the local fatigue performance, which is characterized by variations of local piezoloop with electric cycles, is significantly improved by adding some nanoseeds. It has been verified by scanning electron microscope (SEM) that the film grain morphology changes from columnar to granular structure with the addition of the nanoseeds. On the other hand, the existence of PtxPb transition phase, which existed in interface at early crystallization stage of pure PZT thin film, deteriorates the property of the interface. These microstructures and the interfaces of these films significantly affect the electrons injection occurred on the interfaces. The domain wall pinning induced by injected electrons and the succeeding penetration into the films is discussed to explain the fatigue performance.

The Role of Processing Parameters in Variation of Microstruture of Sol-Gel Derived Lead Zirconate Titanate Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
Chang Jung Kim ◽  
Tae-Young Kim ◽  
Ilsub Chung ◽  
In Kyung Yoo
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Secondary Phase ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Test System ◽  
Pzt Thin Films ◽  
Force Microscopy

AbstractThe PZT thin films were fabricated to investigate the effect of sol-gel processing parameters on the physical and the electrical properties. The films were made with different amount of excess Pb precursors and drying temperatures, and then annealed in various ambients. The physical properties of the films such as crystallinity and microstructure were evaluated using x-ray diffraction, scanning electron microscopy and atomic force microscopy. The ferroelectric properties and current density characteristics of the films were investigated using a standarized feiroelectric test system and pA meter, respectively. It is found that the drying temperature was playing a key role in the formation of the secondary phase on the PZT thin films. In addition, it turned out that the use of nitrogen as an annealing ambient promoted overall ferroelectric properties, when compared to oxygen ambients.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 613-616
Author(s):  
Dae Jin Yang ◽  
Seong Je Cho ◽  
Jong Oh Kim ◽  
Won Youl Choi
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Reactive Sputtering ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Films

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

Raman analysis of microcircuits with lead zirconate titanate (PZT) films

1992 ◽  
Vol 50 (2) ◽  
pp. 1688-1689
Author(s):  
D. R. Tallant ◽  
R. W. Schwartz ◽  
B. A. Tuttle ◽  
S. C. Everist ◽  
B. C. Tafoya
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Solution Chemistry ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
High Temperature Processing

Certain compositions and structural forms of lead zirconate titanate (PZT) materials have potential applications in microelectronics because of their ferroelectric properties. One such application is in the development of new types of non-volatile memories. PZT films are integrated into microcircuit components using sol-gel deposition techniques. The solution chemistry effects attendant to different sol-gel preparation procedures have been investigated by several researchers.We have used Raman spectroscopy both to characterize the metallo-organic species initially laid down on macroscopic platinum substrates during sol-gel processing and to follow the evolution of Pb-Zr-Ti oxide species through high temperature processing. The high temperature processing removes residual organics and creates Pb-Zr-Ti oxide structures that have ferroelectric properties. Low temperature pyrochlore structures, which are not ferroelectric, can be distinguished by Raman spectroscopy from tetragonal and pseudo-cubic/rhombohedral perovskite structures, which are usefully ferroelectric (Top Figure). In addition Raman spectroscopy has identified lead and titanium oxides that form as intermediates in the high temperature crystallization of ferroelectric PZT structures.

Antiferroelectric Thin Films for Decoupling Capacitor and Microactuator Applications

1997 ◽  
Vol 493 ◽  
Author(s):  
Baomin Xu ◽  
Neelesh G. Pai ◽  
Paul Moses ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Strain Level ◽  
Decoupling Capacitor ◽  
Niobium Doped ◽  
Maximum Current

ABSTRACTLanthanum-doped or niobium-doped lead zirconate titanate stannate antiferroelectric thin films with the thickness of about 0.4 μm have been prepared from acetic acid-based or 2-methoxyethanol-based sol-gel method. All the films have the maximum polarization larger than 30 μC/cm2 and show zero remanent polarization. By choosing appropriate compositions, we can make the films have “square” hysteresis loops with very sharp phase transition or “slanted” hysteresis loops with very small hysteresis. The properties that are important for decoupling capacitor and microactuator applications are characterized. For decoupling capacitor applications, films having square hysteresis loops with energy storage density of up to 7 J/cm3 can be made, which release more than half of their stored charge in 10 ns with a maximum current density of more than 9400 A/cm2. For microactuator applications, the films can either have a strain level of 0.32% with very small hysteresis or have a strain level of 0.42% with moderate hysteresis.

(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

1999 ◽  
Vol 596 ◽  
Author(s):  
Zhenshan Zhang ◽  
Jeong Hwan Park ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Metallic Oxide ◽  
Working Pressure ◽  
Si Substrates ◽  
Oxide Electrodes ◽  
Pzt Films ◽  
Deposited Films

AbstractIn this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

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