Make Carbon nanotube-polymer composite thin: application to water quality

2011 ◽  
Vol 1346 ◽  
Author(s):  
C. Villeneuve ◽  
S. Pacchini ◽  
M. Dilhan ◽  
D. Colin ◽  
A. Brouzes ◽  
...  
Keyword(s):  
Composite Film ◽  
Plasma Treatment ◽  
Inner Core ◽  
Etching Rate ◽  
Water Molecules ◽  
Technology Process ◽  
Aligned Carbon Nanotubes ◽  
Internal Radius ◽  
High Etching Rate ◽  
Membrane Roughness

ABSTRACTThis paper reviews our works about the development of thin composite film based on aligned carbon nanotubes (CNT) forest, embedded in epoxy or PMMA polymer matrix, in order to fabricate membranes dedicated to water purification issue. Indeed, the small internal radius of nanotubes, the smoothness of their inner core and the hydrophobic properties of its interna surface induce remarkable flowing properties for water molecules. In this article, thinnin technology process is investigated to obtain composite film with opened CNT. Different etching techniques as grinding, Chemical Mechanical Polishing (CMP) and isotropic plasma O2ar investigated in term of etching rate and membrane roughness, using AFM and SEM characterizations. Results show CMP process in lapping configuration permits to obtain agreement between high etching rate and membrane roughness. Moreover, to improve water flowing through membrane, O2plasma treatment is used to remove polymer residue spread over CNT. Joint use of lapping and plasma treatment permits to obtain 35μm-thick nanoporous membrane with well-opened protruding nanotubes.

Plasma Coating and Enhanced Dispersion of Carbon Nanotubes

2003 ◽  
Vol 791 ◽  
Author(s):  
Peng He ◽  
Jie Lian ◽  
Donglu Shi ◽  
Lumin Wang ◽  
Wim van Ooij ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Plasma Treatment ◽  
Polymer Films ◽  
Plasma Polymerization ◽  
Plasma Coating ◽  
Experimental Results ◽  
Multi Wall Carbon Nanotubes ◽  
Aligned Carbon Nanotubes ◽  
Ultrathin Polymer Films

ABSTRACTUltrathin polymer films have been deposited on both multi-wall and aligned carbon nanotubes using a plasma polymerization treatment. TEM experimental results showed that a thin film of polystyrene layer (several nanometers) was uniformly deposited on the surfaces of the nanotubes including inner wall surfaces of the multi-wall nanotubes. The coated multi-wall nanotubes were mixed in polymer solutions for studying the effects of plasma coating on dispersion. It was found that the dispersion of multi-wall carbon nanotubes in polystyrene composite was significantly improved. The deposition mechanisms and the effects of plasma treatment parameters are discussed.

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

2013 ◽  
Vol 2 (9) ◽  
pp. P380-P383 ◽  
Author(s):  
L. Liu ◽  
F. Lin ◽  
M. Heinrich ◽  
A. G. Aberle ◽  
B. Hoex
Keyword(s):  
Hydrofluoric Acid ◽  
Crystalline Silicon ◽  
Etching Rate ◽  
High Etching Rate

scholarly journals 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

2018 ◽  
Vol 924 ◽  
pp. 369-372 ◽  
Author(s):  
Shogo Okuyama ◽  
Keisuke Kurashima ◽  
Ken Nakagomi ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Concentric Circle ◽  
Wafer Surface ◽  
Deep Etching ◽  
Gas Distributor ◽  
High Etching Rate ◽  
Hole Arrays ◽  
Rate Profile ◽  
Gas Supply

In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

scholarly journals A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

2016 ◽  
Vol 67 (3) ◽  
pp. 212-216 ◽  
Author(s):  
Jingning Han ◽  
Zhifu Yin ◽  
Helin Zou ◽  
Wenqiang Wang ◽  
Jianbo Feng
Keyword(s):  
Etching Rate ◽  
Chamber Pressure ◽  
Gas Mixture ◽  
Substrate Holder ◽  
Rf Power ◽  
Gas Concentration ◽  
High Etching Rate ◽  
Mems Device ◽  
The Cross ◽  
Difficult Issue

Abstract Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O2 mixture contains about 5%CF4 by volume, the etching rate can be reached at 5.2 μm/min.

Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Brian J. Thibeault ◽  
Larry A. Coldren
Keyword(s):  
Etching Rate ◽  
Reactive Ion Etching ◽  
Single Step ◽  
Gas Mixture ◽  
Optical Performance ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
High Etching Rate ◽  
Sidewall Angle ◽  
Nanopillar Arrays

AbstractA simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.

High etching rate of GaN films by KrF excimer laser

2001 ◽  
Vol 82 (1-3) ◽  
pp. 42-44 ◽  
Author(s):  
Chen-Fu Chu ◽  
C.K Lee ◽  
C.C Yu ◽  
Y.K Wang ◽  
J.Y Tasi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Etching Rate ◽  
High Etching Rate ◽  
Krf Excimer Laser

Study and modeling of fabric hydric behavior to improve wearer comfort

2018 ◽  
Vol 89 (17) ◽  
pp. 3632-3652
Author(s):  
A Marolleau ◽  
F Salaün ◽  
D Dupont ◽  
H Gidik ◽  
S Ducept
Keyword(s):  
Water Vapor ◽  
Chemical Nature ◽  
Inner Core ◽  
Water Molecules ◽  
Vapor Sorption ◽  
Dynamic Vapor Sorption ◽  
Hydrophobic Materials ◽  
Desorption Isotherms ◽  
Sorption Mechanisms ◽  
Hydrophilic Materials

In this study, the sorption and desorption isotherms from the dynamic vapor sorption test are modeled by using six different models, that is, the (i) BET (Brunauer–Emmett–Teller), (ii) modified BET, (iii) GAB (Guggenheim–Anderson–Boer), (iv) PEK (parallel exponential kinetics), (v) HH (Hailwood–Horrobin), and (vi) Nelson and Young models. The application principle of each model is explained and a comparison is done between these models, based on the understanding of sorption mechanisms on or into the textile substrates. They mainly depend on the chemical nature of the fibers used to manufacture the samples. Thus, the presence of various sorption/desorption sites on the surface and/or in the inner core of hydrophilic materials promotes the formation of more hydrogen bonds with water vapor molecules than for hydrophobic materials. Among these previous used models, the PEK, HH, and Nelson and Young models were studied to analyze the water molecule diffusion into the structures, while the GAB and BET models were selected to gain information on the water uptaken as the monolayer and energies of interactions between fibers and water molecules. By understanding the hydric behavior of fabrics during sorption/desorption processes, the fiber blends can be modified for improving the wearer comfort.

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