Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

Study of scalable IBS nanopatterning mechanisms for III-V semiconductors using in-situ surface characterization

2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Surface Characterization ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Self Organization ◽  
Beam Parameter ◽  
Ion Beam Sputtering

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.

Maskless selective growth and in situ beryllium-doping of GaAs grown by low-energy focused ion beam

2005 ◽  
Vol 275 (1-2) ◽  
pp. e989-e993 ◽  
Author(s):  
E.M. Kim ◽  
T. Nishiyama ◽  
K. Numata ◽  
S. Itoh ◽  
T. Gotoh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Selective Growth ◽  
Low Energy ◽  
Beryllium Doping

In-situ maskless selective area epitaxy of GaAs using a low-energy Ga focused ion beam

1994 ◽  
Vol 140 (1-2) ◽  
pp. 244-247 ◽  
Author(s):  
Kangsa Pak ◽  
Isao Saitoh ◽  
Naoki Ohshima ◽  
Hiroo Yonezu
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Selective Area Epitaxy ◽  
Selective Area

Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

1994 ◽  
Vol 354 ◽  
Author(s):  
J. Yanagisawa ◽  
A. Nozawa ◽  
Y. Yuba ◽  
S. Takaoka ◽  
K. Murase ◽  
...  
Keyword(s):  
Carrier Density ◽  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Sample Surface ◽  
Low Energy ◽  
Hall Resistance ◽  
Irradiation Effect ◽  
Before And After ◽  
Ar Gas

AbstractEffects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on the sample surface at several ion doses (1011 - 1013 cm-2). Carrier density and electron mobility of the 2DEG formed at about 90 nm below the GaAs/AlGaAs heterostructure surface were estimated at 1.5 K by Hall resistance and longitudinal resistance measurements before and after annealing at 400°C for 10 min in an Ar gas ambient. The temperature dependence of those values was also measured for as-grown and for 1013 cm-2 ion irradiated and subsequently annealed samples. Typical results show that carrier density and mobility are not degraded severely by Ar ion irradiation at doses of 1013 cm-2 and suggest the possibility to fabricate buried structures in GaAs/AlGaAs heterostructures using low energy Si focused ion beam (FIB) irradiation and subsequent in situ overlayer growth by MBE.

A study on in-situ maskless selective epitaxy of GaAs by a low-energy Ga focused ion beam with an As4 molecular beam

1995 ◽  
Vol 146 (1-4) ◽  
pp. 359-362 ◽  
Author(s):  
Isao Saitoh ◽  
Kangsa Pak ◽  
Yuichiroh Inoue ◽  
Naoki Ohshima ◽  
Hiroo Yonezu
Keyword(s):  
Molecular Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Selective Epitaxy

Electron and ion irradiation-induced dissolution of mechanical twins in the intermetalic U3Si: An in situ HVEM study

1989 ◽  
Vol 47 ◽  
pp. 652-653
Author(s):  
Charles W. Allen ◽  
Robert C. Birtcher
Keyword(s):  
Elevated Temperatures ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
High Energy ◽  
Mechanical Twinning ◽  
In Situ Experiments

The uranium silicides, including U3Si, are under study as candidate low enrichment nuclear fuels. Ion beam simulations of the in-reactor behavior of such materials are performed because a similar damage structure can be produced in hours by energetic heavy ions which requires years in actual reactor tests. This contribution treats one aspect of the microstructural behavior of U3Si under high energy electron irradiation and low dose energetic heavy ion irradiation and is based on in situ experiments, performed at the HVEM-Tandem User Facility at Argonne National Laboratory. This Facility interfaces a 2 MV Tandem ion accelerator and a 0.6 MV ion implanter to a 1.2 MeV AEI high voltage electron microscope, which allows a wide variety of in situ ion beam experiments to be performed with simultaneous irradiation and electron microscopy or diffraction.At elevated temperatures, U3Si exhibits the ordered AuCu3 structure. On cooling below 1058 K, the intermetallic transforms, evidently martensitically, to a body-centered tetragonal structure (alternatively, the structure may be described as face-centered tetragonal, which would be fcc except for a 1 pet tetragonal distortion). Mechanical twinning accompanies the transformation; however, diferences between electron diffraction patterns from twinned and non-twinned martensite plates could not be distinguished.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

scholarly journals Cyclic Deformation of Microcantilevers Using In-Situ Micromanipulation

2021 ◽  
Author(s):  
A. H. S. Iyer ◽  
M. H. Colliander
Keyword(s):  
Degrees Of Freedom ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Structural Components ◽  
Cyclic Testing ◽  
Phase Boundaries ◽  
Bulk Specimen ◽  
Arbitrary Position ◽  
Three Degrees Of Freedom

Abstract Background The trend in miniaturisation of structural components and continuous development of more advanced crystal plasticity models point towards the need for understanding cyclic properties of engineering materials at the microscale. Though the technology of focused ion beam milling enables the preparation of micron-sized samples for mechanical testing using nanoindenters, much of the focus has been on monotonic testing since the limited 1D motion of nanoindenters imposes restrictions on both sample preparation and cyclic testing. Objective/Methods In this work, we present an approach for cyclic microcantilever bending using a micromanipulator setup having three degrees of freedom, thereby offering more flexibility. Results The method has been demonstrated and validated by cyclic bending of Alloy 718plus microcantilevers prepared on a bulk specimen. The experiments reveal that this method is reliable and produces results that are comparable to a nanoindenter setup. Conclusions Due to the flexibility of the method, it offers straightforward testing of cantilevers manufactured at arbitrary position on bulk samples with fully reversed plastic deformation. Specific microstructural features, e.g., selected orientations, grain boundaries, phase boundaries etc., can therefore be easily targeted.

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