Characterization on the Electrical Properties of PDMS Nanocomposites by Conducting Polymer Nanowires

2011 ◽  
Vol 1312 ◽  
Author(s):  
Ping Du ◽  
Xi Lin ◽  
Xin Zhang
Keyword(s):  
Electrical Properties ◽  
Dielectric Relaxation ◽  
Conducting Polymer ◽  
Percolation Theory ◽  
Volume Fraction ◽  
Dielectric Constants ◽  
Template Method ◽  
Impedance Measurements ◽  
Dielectric Relaxation Behavior ◽  
Polymer Nanowires

ABSTRACTPolydimethylsiloxane (PDMS) is one of the most used materials in bio-applications. However, previous works were mainly focus on the mechanical aspect. In this paper we presented a practical and efficient approach to enhance the electrical properties of PDMS by using conducting polymer nanowires (CPNWs). The nanowires were synthesized using template method and added in PDMS to form nanocomposites. The dielectric constants of the composites were characterized by impedance measurements, and the dielectric relaxation behavior and the volume fraction of CPNWs was investigated. Based on the percolation theory a much lower threshold (5.3 vol%) was achieved.

Electrical properties and dielectric relaxation behavior of zirconium vanadate

2018 ◽  
Vol 44 (17) ◽  
pp. 21621-21625 ◽  
Author(s):  
Baohe Yuan ◽  
Xiaoke He ◽  
Lulu Chen ◽  
Weishu Wang ◽  
Tao Cheng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Dielectric Relaxation ◽  
Relaxation Behavior ◽  
Dielectric Relaxation Behavior ◽  
Zirconium Vanadate

High dielectric constants in BaTiO3 doped 90V2O5−10Bi2O3 oxide glasses obeying Debye-type dielectric relaxation behavior

1994 ◽  
Vol 9 (8) ◽  
pp. 1932-1935 ◽  
Author(s):  
Sahana Chakraborty ◽  
A.K. Bera ◽  
S. Mollah ◽  
B.K. Chaudhuri
Keyword(s):  
Dielectric Constant ◽  
Dielectric Relaxation ◽  
Dilution Effect ◽  
Dielectric Behavior ◽  
Dielectric Constants ◽  
Relaxation Behavior ◽  
Oxide Glasses ◽  
Base Glass ◽  
Dielectric Relaxation Behavior ◽  
High Dielectric

BaTiO3 doped 90V2O5−10Bi2O3 (VB) oxide glasses show a larger dielectric constant (102-104) compared to that of the base glass VB (∼102). The VB glass with 15 wt.% BaTiO3 shows the largest dielectric constant, and all the glasses show a Debye-type dielectric relaxation behavior. The increase in dielectric constant appears to be mainly due to the formation of microcrystalline clusters of BaTiO3 (1.8–8 μm, depending on the BaTiO3 concentration present in the base glass). Other than the dilution effect with BaTiO3, the glass-former oxide Bi2O3 also influences the dielectric behavior of BaTiO3 doped VB glasses.

Dielectric relaxation behavior in co-precipitation derived ferrite (Zn1−xNix)Fe2O4 (0.2 ≤ x ≤ 0.5) ceramics

2016 ◽  
Vol 30 (02) ◽  
pp. 1550277 ◽  
Author(s):  
Y. P. Jiang ◽  
R. Li ◽  
X. G. Tang ◽  
Q. X. Liu ◽  
D. G. Chen
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Dielectric Relaxation ◽  
Arrhenius Equation ◽  
Complex Impedance ◽  
Impedance Spectra ◽  
Nickel Doping ◽  
Dielectric Relaxation Behavior ◽  
Co Precipitation ◽  
Complex Impedance Spectra

The influence of nickel doping on the electrical properties and dielectric relaxation in Zn[Formula: see text]Ni[Formula: see text]Fe2O4 (ZNFO, [Formula: see text]) ceramics has been investigated via the dielectric and complex impedance spectra measurements. According to the modified Curie–Weiss law, the diffusivity factor of the ZNFO ceramics from 1.69 to 2.02 with [Formula: see text] increasing from 0.2 to 0.5, respectively. Two relaxation peaks are observed in the nickel doped samples, by employing the modified Arrhenius equation, two activation energy values of different sintering temperatures were calculated and analyzed in combination with oxygen vacancy. The Cole–Cole plots showed that the semicircular arcs which are nonideal Debye type, and the grain boundaries resistance increases with increasing Ni concentration.

Ionic Conductivities of Doped CeO2 Thin Films as Related to Their Microstructure

1995 ◽  
Vol 411 ◽  
Author(s):  
Chunyan Tian ◽  
Siu-Wai Chan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ionic Conductivities ◽  
Dielectric Constants ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
Fine Grain ◽  
Brick Layer Model ◽  
Columnar Grain ◽  
Beam Deposition

ABSTRACTThin films of 4% Y2O3 doped CeO2/Pd film/(001)LaA103 with a very low pinhole density were successfully prepared using electron-beam deposition technique. The microstructure of the films was characterized by x-ray diffraction and the electrical properties were studied as a function of temperature with AC impedance spectroscopy. A brick layer model was adopted to correlate the electrical properties to the microstructure of the films, which can be simplified as either a series or a parallel equivalent circuit associated with either a fine grain or a columnar grain structure, respectively. The conductivities of the films fell between the conductivities derived from the two circuit models, suggesting that the films are of a mixed fine grain and columnar grain structure. The measured dielectric constants of the films were found smaller than that of the bulk.

Nonmonotonic dielectric relaxation behavior of thermochromic epoxy composite

2022 ◽  
pp. 131678
Author(s):  
Jian Gao ◽  
Yiwei Long ◽  
Kangning Wu ◽  
Jianying Li ◽  
Guilai Yin
Keyword(s):  
Dielectric Relaxation ◽  
Epoxy Composite ◽  
Relaxation Behavior ◽  
Dielectric Relaxation Behavior

Chitosan-Bentonite Crosslinked Film As Indicator for Copper (II) Ions Adsorption

2021 ◽  
Author(s):  
Nurul Huda Osman ◽  
Nurul Najiha Mazu ◽  
Josephine Liew Ying Chyi ◽  
Muhammad Mahyiddin Ramli ◽  
Mohammad Abdull Halim Mohd Abdull Majid ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Adsorption Capacity ◽  
Contact Time ◽  
Dc Conductivity ◽  
Dielectric Constants ◽  
Peak Amplitude ◽  
Electrical Parameters ◽  
Before And After

This paper reports on chitosan/bentonite crosslinked (ChB-ECH) film for removal of Cu (II). The effects of chitosan/bentonite ratio on the removal percentage were studied along with the effect of different Cu (II) concentration and the contact time on the film adsorption capacity, qt. The electrical properties of the film are studied, before and after the adsorption occurred, by using impedance spectroscopy for different parameters such as DC conductivity, the complex dielectric constants (ε’ and ε”) and complex electrical modulas (M’ and M’’). The results showed that the chitosan/bentonite ratio of 3:1 produces highest removal percentage at 29 %, while the contact time of 120 minutes was found to be optimum. An increment in the DC conductivity of the ChB-ECH film’s was observed up to 10-7 S/cm as the removal percentage of film increased. The film with the highest Cu (II) adsorb also showed the highest value for ε’ and ε” while exhibiting non-Derby behavior. Shifting of peak amplitude of the M” towards the higher frequency was also observed as the Cu (II) adsorption in the film increased. The results showed that all the electrical parameters can be utilized to determine the amount of adsorbed copper (II) in chitosan/bentonite film.

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