Structural, optical and magnetic properties of highly oriented transition metal (Mn/Co/Ni/Cu) doped ZnO thin films prepared by PLD

2012 ◽  
Vol 1454 ◽  
pp. 239-244 ◽  
Author(s):  
Arun Aravind ◽  
M.K. Jayaraj ◽  
Mukesh Kumar ◽  
Ramesh Chandra
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Room Temperature Ferromagnetism ◽  
Visible Region ◽  
Band Edge ◽  
Zno Films ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Axis Orientation ◽  
Doped Zno

ABSTRACTZnO doped with transition metal (TM) thin films were grown by pulsed laser deposition. XRD pattern reveals that all the ZnTMO films have c-axis orientation normal to the substrate. The reciprocal space mapping shows that the crystallinity of ZnTMO film deteriorates at higher doping of TM. All the TM doped ZnO films have transmittance greater than 75% in the visible region. The band gap of the ZnTMO thin films shows red shift on doping with Ni and Cu where as blue shift is observed for Co and Mn which increases with TM concentration. The copper doped ZnO thin film shows green PL emission at 542 nm along with the band edge emission at 385 nm. But other TM doping shows only band edge emission (385nm) and its intensity decreases at higher doping percentage. The presence of non-polar E2high and E2lowRaman modes in thin films indicates that ‘TM’ doping do not alter the wurtzite structure of ZnO. The magnetic studies of the TM doped ZnO shows room temperature ferromagnetism

scholarly journals Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

2017 ◽  
Vol 7 (8) ◽  
pp. 3041 ◽  
Author(s):  
C. L. Heng ◽  
W. Xiang ◽  
W. Y. Su ◽  
H. C. Wu ◽  
Y. K. Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
High Temperature Annealing ◽  
Edge Emission ◽  
Doped Zno ◽  
Co Doped

Blueshift of near band edge emission in Mg doped ZnO thin films and aging

2004 ◽  
Vol 95 (9) ◽  
pp. 4772-4776 ◽  
Author(s):  
F. K. Shan ◽  
B. I. Kim ◽  
G. X. Liu ◽  
Z. F. Liu ◽  
J. Y. Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Doped Zno ◽  
Mg Doped

Structural, Electrical and Optical Properties of Li-Doped ZnO Thin Films Influenced by Annealing Oxygen Pressure

2011 ◽  
Vol 299-300 ◽  
pp. 530-533
Author(s):  
Li Dan Tang ◽  
Bing Wang ◽  
Jian Zhong Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Surface Optical ◽  
Doped Zno

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and In-situ annealing. The structural, electrical and optical properties of Li-doped ZnO films strongly depend on the annealing oxygen pressure. XRD and AFM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (~85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with a Hall mobility of 5.0 cm2/Vs, resistivity of 0.97Ωcm and carrier concentration of 1.60×1017cm-3when annealing oxygen pressure is 1Pa.

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

2010 ◽  
Vol 19 (2) ◽  
pp. 027202 ◽  
Author(s):  
Long Xue ◽  
Li Xaing ◽  
Lin Peng-Ting ◽  
Cheng Xing-Wang ◽  
Liu Ying ◽  
...  
Keyword(s):  
Band Edge ◽  
Zno Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Full Width ◽  
Half Maximum ◽  
Edge Emission ◽  
Mg Doping ◽  
Doped Zno ◽  
Mg Doped

Band-edge emission, defects, morphology and structure of in-doped ZnO nanocrystal films

2019 ◽  
Vol 89 ◽  
pp. 322-328 ◽  
Author(s):  
B. El Filali ◽  
J.A. Jaramillo Gomez ◽  
T.V. Torchynska ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Morphology And Structure ◽  
Nanocrystal Films ◽  
Doped Zno ◽  
Zno Nanocrystal

Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO3 substrates

2015 ◽  
Vol 121 (1) ◽  
pp. 17-21 ◽  
Author(s):  
Guangheng Wu ◽  
Xiang Li ◽  
Meifeng Liu ◽  
Zhibo. Yan ◽  
Jun-Ming Liu
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

scholarly journals Growth of Zn1−x CdxO nanocrystalline thin films by sol-gel method and their characterization for optoelectronic applications

2014 ◽  
Vol 32 (4) ◽  
pp. 688-695 ◽  
Author(s):  
Munirah Munirah ◽  
Ziaul Khan ◽  
Mohd. Khan ◽  
Anver Aziz
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cd Doping ◽  
Vis Spectroscopy ◽  
Doped Zno

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.

Deposition of Zinc Oxide Thin Films Using a Surface Reaction on Platinum Nanoparticles

2011 ◽  
Vol 1315 ◽  
Author(s):  
Kanji Yasui ◽  
Hitoshi Miura ◽  
Hiroshi Nishiyama
Keyword(s):  
Free Exciton ◽  
Exothermic Reaction ◽  
Chemical Vapor ◽  
Band Edge ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Neutral Donor ◽  
Pl Spectra

ABSTRACTA new chemical vapor deposition method for the growth of ZnO films using the reaction between dimethylzinc (DMZn) and thermally excited H2O produced by a Pt-catalyzed H2–O2 reaction was investigated. The thermally excited H2O molecules formed by the exothermic reaction of H2 and O2 on the catalyst were ejected from a fine nozzle into the reaction zone and allowed to collide with DMZn ejected from another fine nozzle. The ZnO films were grown directly on a-plane (11-20) sapphire substrates at substrate temperatures of 773-873 K with no buffer layer. X-ray diffraction patterns exhibited intense (0002) and (0004) peaks from the ZnO(0001) index plane. The smallest full width at half maximum (FWHM) value of the ω- rocking curve of ZnO(0002) was less than 0.1º. The largest Hall mobility and the smallest residual carrier concentration of the ZnO films were 169 cm2V−1s−1 and 1.7×1017 cm−3, respectively. Photoluminescence (PL) spectra at room temperature exhibited a band edge emission at 3.29 eV, with a FWHM of 104 meV. Green luminescence from deeper levels was generally about 1.5% of the band edge emission intensity. PL spectra at 5 K showed a strong emission peak at 3.3603 eV, attributed to the neutral donor-bound exciton Dºx. The FWHM was as low as 1.0 meV. Free exciton emissions also appeared at 3.3757 eV (FXA, n=1) and 3.4221 eV (FXA, n=2).

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