Development of New Fullerene-based Electron Acceptors for Efficient Organic Photovoltaic Cells

2012 ◽  
Vol 1390 ◽  
Author(s):  
Yutaka Matsuo
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Fullerene Derivative ◽  
High Electron ◽  
Organic Thin Film ◽  
Photovoltaic Devices

ABSTRACTThis article describes design of fullerene-based electron-accepting materials to obtain high performance in organic thin-film photovoltaic devices. A 1,4-bis(dimethylphenylsilylmethyl)[60]fullerene gives higher open circuit voltage than 1,2-diadduct because of smaller π-conjugated systems, and enables columnar fullerene-core array for high electron mobility and thermal crystallization for ideal phase separation with electron-donor materials. A 56π-electron fullerene derivative possessing the dihydromethano group as the smallest carbon addend does not disrupt fullerene-fullerene contact in solid state, giving high open-circuit voltage without decreasing of short-circuit current density and fill factor.

Development of fullerene derivatives with high LUMO level through changes in π-conjugated system shape

2012 ◽  
Vol 84 (4) ◽  
pp. 945-952 ◽  
Author(s):  
Yutaka Matsuo
Keyword(s):  
Solid State ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Fullerene Derivative ◽  
Supramolecular Organization ◽  
High Electron ◽  
Organic Thin Film

This article describes a concept for designing fullerene-based electron-accepting materials to obtain high open-circuit voltage (VOC) in organic thin-film photovoltaic devices without an accompanying decrease in short-circuit current density. The keys to this concept are (1) reducing the size of the fullerene π-conjugated system to realize high VOC and (2) shortening the inter-fullerene distance in the solid-state packing structure to achieve high short-circuit current density (JSC), which is made possible by well-designed supramolecular organization or a small organic addend. In this article, two representative examples are discussed. One is 1,4-bis(silylmethyl)[60]fullerene (SIMEF), which forms a columnar fullerene-core array for high electron mobility and undergoes thermal crystallization for good phase separation with the electron-donating material. The other is a 56π-electron fullerene derivative bearing a dihydromethano group, the smallest carbon addend, which does not disrupt fullerene–fullerene contact in the solid state.

A naphthodithiophene-based nonfullerene acceptor for high-performance polymer solar cells with a small energy loss

2020 ◽  
Vol 8 (19) ◽  
pp. 6513-6520 ◽  
Author(s):  
Xingliang Dong ◽  
Qing Guo ◽  
Qi Liu ◽  
Lei Zhu ◽  
Xia Guo ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Small Energy ◽  
High Performance Polymer ◽  
Nonfullerene Acceptor

A new non-fullerene acceptor named NTO-4F is developed. The optimal PSC based on PM6:NTO-4F achieves a PCE of 11.5% with simultaneously high open-circuit voltage of 0.99 V and short-circuit current density of 19.1 mA cm−2.

scholarly journals Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Kaixin Guo ◽  
Xu Wang ◽  
Rongfen Zhang ◽  
Zhao Fu ◽  
Liangyu Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Short Circuit ◽  
Double Perovskite ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Black Silicon ◽  
Photovoltaic Devices ◽  
Photovoltaic Properties ◽  
Carrier Separation

AbstractMultiferroics are being studied increasingly in applications of photovoltaic devices for the carrier separation driven by polarization and magnetization. In this work, textured black silicon photovoltaic devices are fabricated with Bi6Fe1.6Co0.2Ni0.2Ti3O18/Bi2FeCrO6 (BFCNT/BFCO) multiferroic heterojunction as an absorber and graphene as an anode. The structural and optical analyses showed that the bandgap of Aurivillius-typed BFCNT and double perovskite BFCO are 1.62 ± 0.04 eV and 1.74 ± 0.04 eV respectively, meeting the requirements for the active layer in solar cells. Under the simulated AM 1.5 G illumination, the black silicon photovoltaic devices delivered a photoconversion efficiency (η) of 3.9% with open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.75 V, 10.8 mA cm−2, and 48.3%, respectively. Analyses of modulation of an applied electric and magnetic field on the photovoltaic properties revealed that both polarization and magnetization of multiferroics play an important role in tuning the built-in electric field and the transport mechanisms of charge carriers, thus providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.

Statistical analysis of properties of non-fullerene acceptors for organic photovoltaics

2022 ◽  
Author(s):  
Naoya Yamaguchi ◽  
Hiroaki Sano ◽  
Hikaru Sawahata ◽  
Masahiro Nakano ◽  
Tetsuya TAIMA ◽  
...  
Keyword(s):  
Organic Photovoltaics ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Power Conversion ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Performance Parameters ◽  
Chemical Structures

Abstract From ~1500 published journal papers on organic photovoltaics (OPVs), we extracted OPV performance parameters of power conversion efficiency (PCE), open circuit voltage (VOC) and short circuit current density (JSC) and chemical structures of photovoltaic layer materials to investigate the relation between the extracted data of OPVs accompanied by non-fullerene acceptors (NFAs). Our analysis indicated that there was a suitable range of VOC for high PCE or JSC in NFAs. We also investigated the correlation between the performance parameters and chemical structures of small molecule NFAs. Our approach may enable us to provide new design strategy for high performance OPVs.

IMPROVING STABILITY OF CHLOROPHYLL AS NATURAL DYE FOR DYE-SENSITIZED SOLAR CELLS

2017 ◽  
Vol 80 (1) ◽  
Author(s):  
Zainal Arifin ◽  
Sudjito Soeparman ◽  
Denny Widhiyanuriyawan ◽  
Suyitno Suyitno ◽  
Argatya Tara Setyaji
Keyword(s):  
Current Density ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Natural Dyes ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Natural dyes have attracted much researcher’s attention due to their low-cost production, simple synthesis processes and high natural abundance. However the dye-sensitized solar cells (DSSCs) based natural dyes have higher tendency to degradation. This article reports on the enhancement of performance and stability of dye-sensitized solar cells (DSSCs) using natural dyes. The natural dyes were extracted from papaya leaves by ethanol solvent at a temperature of 50 °C. Then the extracted dyes were isolated and modified into Mg-chlorophyll using column chromatography. Mg-chlorophyll was then synthesized into Fe-chlorophyll to improve stability. The natural dyes were characterized using ultraviolet-visible spectrometry, Fourier transform infrared spectroscopy, and cyclic voltammetry. The performance of DSSCs was tested using a solar simulator. The results showed the open-circuit voltage, the short-circuit current density, and the efficiency of the extracted papaya leaves-based DSSCs to be 325 mV, 0.36 mA/cm2, and 0.07%, respectively. Furthermore, the DSSCs with purified chlorophyll provide high open-circuit voltage of 425 mV and short-circuit current density of 0.45 mA/cm2. The use of Fe-chlorophyll for sensitizing the DSSCs increases the efficiency up to 2.5 times and the stability up to two times. The DSSCs with Fe-chlorophyll dyes provide open-circuit voltage, short-circuit current density, and efficiency of 500 mV, 0.62 mA/cm2, and 0.16%, respectively. Further studies to improve the current density and stability of natural dye-based DSSCs along with an improvement in the anchor between dyes and semiconducting layers are required.

Metal/Porous Silicon Schottky Diode Structures as Sensors

2006 ◽  
Vol 915 ◽  
Author(s):  
Tayyar Dzhafarov ◽  
Cigdem Oruc Lus ◽  
Sureyya AYDIN ◽  
Emel Cingi
Keyword(s):  
Porous Silicon ◽  
Schottky Diode ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Schottky Type ◽  
Capacitance Characteristics

AbstractIn this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells

Science ◽  
2017 ◽  
Vol 356 (6345) ◽  
pp. 1376-1379 ◽  
Author(s):  
Woon Seok Yang ◽  
Byung-Wook Park ◽  
Eui Hyuk Jung ◽  
Nam Joong Jeon ◽  
Young Chan Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Deep Level ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Small Cells ◽  
Iodide Ions

The formation of a dense and uniform thin layer on the substrates is crucial for the fabrication of high-performance perovskite solar cells (PSCs) containing formamidinium with multiple cations and mixed halide anions. The concentration of defect states, which reduce a cell’s performance by decreasing the open-circuit voltage and short-circuit current density, needs to be as low as possible. We show that the introduction of additional iodide ions into the organic cation solution, which are used to form the perovskite layers through an intramolecular exchanging process, decreases the concentration of deep-level defects. The defect-engineered thin perovskite layers enable the fabrication of PSCs with a certified power conversion efficiency of 22.1% in small cells and 19.7% in 1-square-centimeter cells.

scholarly journals A Study on the Effects of Selenization Temperature on the Properties of Na-Doped Cu2ZnSn(S,Se)4 Thin Film and Its Correlation with the Performance of Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2434
Author(s):  
Zhanwu Wang ◽  
Dongyue Jiang ◽  
Fancong Zeng ◽  
Yingrui Sui
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Sol Gel ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Post Annealing ◽  
Different Temperatures ◽  
Selenization Temperature

In this study, we prepared Na-doped Cu2ZnSn(S,Se)4 [noted as (Na0.1Cu0.9)2ZnSn(S,Se)4] films on the Mo substrate using a simple and cheap sol–gel method together with the post-annealing technique. The effects of selenization temperature on the properties of Na-doped Cu2ZnSn(S,Se)4 were surveyed. The results indicated that some sulfur atoms in the films were substituted by selenium atoms by increasing the selenization temperature, and all films selenized at different temperatures had a kesterite structure. As the selenization temperature increased from 520 to 560 °C, the band gaps of the film can be tuned from 1.03 to 1 eV. The film with better morphology and opto-electrical properties can be obtained at an intermediate selenization temperature range (e.g., 540 °C), which had the lowest resistivity of 47.7 Ω cm, Hall mobility of 4.63 × 10−1 cm2/Vs, and carrier concentration of 2.93 × 1017 cm−3. Finally, the best power conversion efficiency (PCE) of 4.82% was achieved with an open circuit voltage (Voc) of 338 mV, a short circuit current density (Jsc) of 27.16 mA/cm2 and a fill factor (FF) of 52.59% when the selenization temperature was 540 °C.

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