Electrochemical Oxidation of Phenol in Water Solutions Using Nanocrystalline Boron-Doped Diamond Film Anode

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jorge Arturo Lara Viera ◽  
Manoj K. Ram ◽  
Pedro Villalba ◽  
Mikhail Ladanov ◽  
Ashok Kumar
Keyword(s):  
Electrochemical Oxidation ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Water Solution ◽  
Chemical Vapor ◽  
Test Sample ◽  
Sample Solution ◽  
Boron Doped Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped

ABSTRACTThe present paper reports the utilization of a boron-doped nanocrystalline diamond film (BDD) in electrochemical oxidization (ECO) process of organic phenol compound in 0.1 M H2SO4 water solution. The nano BDD films were synthesized by microwave plasma chemical vapor deposition (MWPCVD), and then characterized by Raman spectroscopy and SEM before and after the electrochemical oxidation treatment. For the ECO treatment performed to the test sample solution, an observation of the first and the last voltammetric plots exhibited a qualitatively differences between the two plots where the first one represent the initial concentration and the last one the signal produced by the organic solution after treatment. UV-Vis analysis through the application of a standard calibration curve, quantitatively confirmed the composition of phenol remaining in the sample solution subdued to the ECO treatment.

Nano-Crystalline Diamond Films Deposited on Copper Substrate by MPCVD Method

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang
Keyword(s):  
Diamond Film ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Copper Substrate ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Adhesive Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Nano Crystalline

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

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