Thermal stability of ultra thin Zr-B-N films as diffusion barrier between Cu and Si

2020 ◽  
Vol 527 ◽  
pp. 146810
Author(s):  
Y. Meng ◽  
Z.X. Song ◽  
Y.H. Li ◽  
D. Qian ◽  
W. Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

scholarly journals Thermal stability of Mg/Co multilayer with B_4C, Mo or Zr diffusion barrier layers

2011 ◽  
Vol 19 (22) ◽  
pp. 21849 ◽  
Author(s):  
Jingtao Zhu ◽  
Sika Zhou ◽  
Haochuan Li ◽  
Zhanshan Wang ◽  
Philippe Jonnard ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Barrier Layers ◽  
Thermal Stability Of

Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1343-1351 ◽  
Author(s):  
Kow-Ming Chang ◽  
I-Chung Deng ◽  
Ta-Hsun Yeh ◽  
Kuen-Der Lain ◽  
Chao-Ming Fu
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Contact System ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

Thermal stability of AlCrTaTiZrMo-nitride high entropy film as a diffusion barrier for Cu metallization

2019 ◽  
Vol 773 ◽  
pp. 482-489 ◽  
Author(s):  
Rongbin Li ◽  
Minxu Li ◽  
Chunxia Jiang ◽  
Bangwei Qiao ◽  
Weiwei Zhang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
High Entropy ◽  
Cu Metallization ◽  
Thermal Stability Of

Diffusion barriers for CeFe4Sb12/Cu thermoelectric devices

2013 ◽  
Vol 1490 ◽  
pp. 197-202 ◽  
Author(s):  
Laetitia Boulat ◽  
Romain Viennois ◽  
Didier Ravot ◽  
Nicole Fréty
Keyword(s):  
Thermal Stability ◽  
Thermoelectric Material ◽  
Diffusion Barrier ◽  
Copper Electrode ◽  
Diffusion Barriers ◽  
Tantalum Nitride ◽  
Thermoelectric Devices ◽  
Microstructural Study ◽  
Copper Material ◽  
Thermal Stability Of

ABSTRACTThe efficiency of a tantalum nitride interlayer as a diffusion barrier for CeFe4Sb12 thermoelectric material against electrode copper material has been investigated. The thermal stability of CeFe4Sb12/TaN/Cu stackings has been investigated after annealing at 600°C from a microstructural study. CeFe4Sb12 and Cu appear to chemically react through the formation of CeCu2 and Cu2Sb phases whereas no reaction is observed for CeFe4Sb12 with TaN. This study showed that the TaN interlayer cannot inhibit the diffusion of Sb from the skutterudite substrate to the copper electrode but prevents the diffusion of Ce and consequently the formation of the CeCu2 phase.

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