Electrical Characteristics of TiW/ZnO Schottky contact with ALD and PLD

2014 ◽  
Vol 1635 ◽  
pp. 127-132 ◽  
Author(s):  
Mei Shen ◽  
Amir Afshar ◽  
Manisha Gupta ◽  
Gem Shoute ◽  
Ken Cadien ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Analytical Study ◽  
Breakdown Strength ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Atomic Layer ◽  
Barrier Heights ◽  
Schottky Rectifiers ◽  
Linear Behavior ◽  
Layer Deposition

ABSTRACTAn electrical and analytical study was carried out to investigate TiW/ZnO Schottky contacts with 30 nm ZnO thin film layers deposited by pulsed laser deposition (PLD), plasma enhanced atomic layer deposition (PEALD), and thermal atomic layer deposition (TALD). Devices with ZnO layer deposited by TALD exhibit approximately linear behavior in their I-V measurements. However, both devices with ZnO layers deposited by PEALD and PLD behaved like Schottky rectifiers with barrier heights between TiW and ZnO of 0.51 eV and 0.45 eV respectively and ideality factors of 2.0 and 2.3 respectively. The PEALD deposited ZnO Schotty diodes demonstrated an on/off rectifying ratio of about 25 at ±1 V. The leakage current values of the PLD deposited ZnO Schottky diodes are significantly larger than those of PEALD, leading to a poor on/off rectifying ratio of ∼4. Due to the small thickness, a critical breakdown strength of 1.3 MV/cm was estimated for PEALD-ZnO thin films.

Characteristics of Nanocomposite ZrO2/Al2O3 Films Deposited by Plasma-Enhanced Atomic Layer Deposition

2007 ◽  
Vol 7 (11) ◽  
pp. 4180-4184
Author(s):  
Sun Jin Yun ◽  
Jung Wook Lim ◽  
Hyun-Tak Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Composite Films ◽  
Atomic Layer ◽  
Nano Composite ◽  
Layer Deposition ◽  
Electrical Breakdown Strength ◽  
Film Characteristics ◽  
Al2o3 Films

Nanocomposite ZrO2/Al2O3 (ZAO) films were deposited on Si by plasma-enhanced atomic layer deposition and the film characteristics including interfacial oxide formation, dielectric constant (k), and electrical breakdown strength were investigated without post-annealing process. In both the mixed and nano-laminated ZAO films, the thickness of the interfacial oxide layer (TIL) was considerably reduced compared to ZrO2 and Al2O3 films. The TIL was 0.8 nm in nano-composite films prepared at a mixing ratio (ZrO2:Al2O3) of 1:1. The breakdown strength and the leakage current level were greatly improved by adding Al2O3 as little as 7.9% compared to that of ZrO2 and were enhanced more with increasing content of Al2O3. The k of ZrO2 and mixed ZAO (Al2O3 7.9%) films were 20.0 and 16.5, respectively. These results indicate that the addition of Al2O3 to ZrO2 greatly improves the electrical properties with less cost of k compared to the addition of SiO2.

Au/n-InP Schottky diodes using an Al2O3interfacial layer grown by atomic layer deposition

2017 ◽  
Vol 32 (2) ◽  
pp. 025011 ◽  
Author(s):  
Hogyoung Kim ◽  
Min Soo Kim ◽  
Seung Yu Yoon ◽  
Byung Joon Choi
Keyword(s):  
Atomic Layer Deposition ◽  
Schottky Diodes ◽  
Atomic Layer ◽  
Layer Deposition

Molybdenum carbonitride deposited by plasma atomic layer deposition as a Schottky contact to gallium nitride

2021 ◽  
Vol 119 (10) ◽  
pp. 102102
Author(s):  
Alex Molina ◽  
Ian E. Campbell ◽  
Timothy N. Walter ◽  
Ama D. Agyapong ◽  
Suzanne E. Mohney
Keyword(s):  
Gallium Nitride ◽  
Atomic Layer Deposition ◽  
Schottky Contact ◽  
Atomic Layer ◽  
Layer Deposition

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

2017 ◽  
Vol 64 (3) ◽  
pp. 1225-1230 ◽  
Author(s):  
Jidong Jin ◽  
Jacqueline S. Wrench ◽  
James T. Gibbon ◽  
David Hesp ◽  
Andrew Shaw ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Schottky Diodes ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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