Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Tantalum Pentoxide Metal-Insulator-Metal (MIM) Capacitors

2008 ◽  
Author(s):  
Vincent Martinez ◽  
Carine Besset ◽  
Frederic Monsieur ◽  
Laurent Montes ◽  
Gerard Ghibaudo
Keyword(s):  
Leakage Current ◽  
Oxygen Vacancies ◽  
Tantalum Pentoxide ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Current Instability ◽  
Fringe Effect ◽  
Mim Capacitors

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications

2011 ◽  
Vol 284-286 ◽  
pp. 893-899
Author(s):  
Hui Xu ◽  
Li Feng Zhang ◽  
Qiu Xiang Zhang ◽  
Shi Jin Ding ◽  
David Wei Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Bonds ◽  
Metal Insulator ◽  
Capacitance Density ◽  
X Ray ◽  
Voltage Coefficient ◽  
Metal Insulator Metal ◽  
Si Content ◽  
Mim Capacitors

The reactively sputtered HfO2 and HfSixOy dielectrics have been investigated comparatively for metal-insulator-metal (MIM) capacitor applications. X-ray photoelectron spectroscopy analyses reveal the presence of Hf-O, Hf-O-Si and Si-O chemical bonds in the HfSixOy films as well as lots of oxygen vacancies. The relative concentrations of Hf-O-Si and Si-O bonds increase with an increment of the power applied to the Si target. Further, it is found that the quadratic voltage coefficient of MIM capacitor decreases with increasing the Si content in the HfSixOy dielectric in despite of a decrease in the resulting capacitance density. The HfSixOy dielectric MIM capacitors with a capacitance density of ~8.4fF/μm2 exhibit a quadratic voltage coefficient of 1840 ppm/V2 at 100kHz, which is much smaller than 2750 ppm/V2 for the HfO2 dielectric MIM capacitors with a density of ~11.8fF/μm2.

Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation

2007 ◽  
Vol 91 (13) ◽  
pp. 132907 ◽  
Author(s):  
J.-P. Manceau ◽  
S. Bruyere ◽  
S. Jeannot ◽  
A. Sylvestre ◽  
P. Gonon
Keyword(s):  
Oxygen Vacancies ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Current Instability

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

2014 ◽  
Vol 61 (8) ◽  
pp. 2619-2627 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
Sung-Kyu Kwon ◽  
Kwang-Seok Jeong ◽  
Sung-Kwen Oh ◽  
Sun-Ho Oh ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Oxygen Vacancies ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

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