Effect of SiO2 Cap Layer on Thermal Stability of Nickel and Nickel-Cobalt Silicide

2006 ◽  
Vol 321-323 ◽  
pp. 1322-1325
Author(s):  
Kil Jin Han ◽  
Yu Jeong Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Cobalt Silicide ◽  
Thermal Expansion Coefficients ◽  
Nickel Cobalt ◽  
Expansion Coefficients ◽  
The Difference ◽  
The Stability ◽  
Thermal Stability Of

We investigated the effect of SiOcap layer on the thermal stability of nickel and nickel-cobalt silicide by measuring its sheet resistance. The stability of nickel silicide was deteriorated as a function of annealing temperature, while that of nickel-cobalt silicide was not. In case of both silicides, the SiOcap layer improved the stability. Tensile stress from the difference of thermal expansion coefficients between SiO2 and nickel silicide may suppress the agglomeration of nickel silicide.

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

Effect of SiO2 Cap Layer on Thermal Stability of Nickel and Nickel-Cobalt Silicide

2006 ◽  
pp. 1322-1325
Author(s):  
Kil Jin Han ◽  
Yu Jeong Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Cap Layer ◽  
Thermal Stability Of

Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy

1999 ◽  
Vol 591 ◽  
Author(s):  
P. S. Lee ◽  
D. Mangelinck ◽  
K. L. Pey ◽  
J. Ding ◽  
T. Osipowicz ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Raman Spectroscopy ◽  
Raman Mapping ◽  
Silicide Formation ◽  
Nucleation Sites ◽  
The Difference ◽  
The Stability ◽  
Non Destructive ◽  
Thermal Stability Of

ABSTRACTThe formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 gtm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm−1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.

scholarly journals An Experimental Study on the Thermal Stability of Mg2Si/Ni Interface under Thermal Cycling

Materials ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3117
Author(s):  
Sung-Jae Joo ◽  
Ji Eun Lee ◽  
Bong-Seo Kim ◽  
Bok-Ki Min
Keyword(s):  
Thermal Stability ◽  
Electrical Contact ◽  
Phase Interface ◽  
Temperature Cycling ◽  
Interfacial Region ◽  
Ternary Compounds ◽  
Thermal Expansion Coefficients ◽  
Long Time ◽  
Expansion Coefficients ◽  
Thermal Stability Of

Mg2Si is a promising eco-friendly thermoelectric material, and Ni is suited for electrical contact on it. In this study, Bi-doped Mg2Si ingots with Ni contacts were fabricated by co-sintering, and thermal stability was investigated by long-time (500 h, 500 cycles) temperature cycling from 25 °C to a peak temperature (Th = 400 and 450 °C) in N2. The as-sintered Ni/Mg2Si interfacial region is a multilayer consisting of Mg3Bi2, a series of MgxSiyNiz ternary compounds (ω, ν, ζ, and η-phases), and MgNi2. In the complex microstructure, the MgNi2 / η-phase interface was vulnerable to stress-induced voiding at Th = 450 °C, which arises from the mismatch of the thermal expansion coefficients. Interfacial voiding was avoided by adding 10 mol% Ag in Ni, which is probably due to the suppression of vacancy migration by the Ag-containing 2nd phase formation at the MgNi2/η-phase interface.

Effect of lateral dimension scaling on thermal stability of thin CoSi2 layers on polysilicon implanted with Si

1998 ◽  
Vol 514 ◽  
Author(s):  
F. La Via ◽  
A. Alberti ◽  
M. G. Grimaldi ◽  
S. Ravesi
Keyword(s):  
Thermal Stability ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Geometric Constraints ◽  
Cobalt Silicide ◽  
Lateral Dimension ◽  
Temperature Range ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of patterned cobalt silicide layers grown on amorphous silicon has been studied in the temperature range between 850 and 1000 °C. The degradation of patterned CoSi2, detected by resistance measurements, occurs via grain agglomeration at a temperature ∼100 °C lower than in blanket film. The reduction of the stability window in patterned samples is due to geometric constraints,. which results in a greater growth rate of the median grains with respect to lateral grains.

scholarly journals Discussion on the Peak Shift of Α-Ti Phase in Tio2 Nanostructured Coatings on Ti-6Al-4V Alloy

2018 ◽  
Author(s):  
Linh Nguyen ◽  
Zhong-Tao Jiang ◽  
Jaegyu Kim ◽  
Seungbum Hong ◽  
Kwangsoo No
Keyword(s):  
Annealing Temperature ◽  
Rf Sputtering ◽  
Peak Shift ◽  
Nanostructured Coatings ◽  
Ti Alloy ◽  
Thermal Expansion Coefficients ◽  
H2o2 Oxidation ◽  
Expansion Coefficients ◽  
The Difference ◽  
Hcp Structure

In this study, TiO2 nanostructured coatings on Ti-6A-4V alloys were fabricated by two methods: H2O2 oxidation and RF sputtering. In the annealing temperature range of 25 C - 500 C, there were the peaks at 35, 37, 40 and 52 corresponding to {100}, {002}, {101} and {102} crystal planes of hcp structure of α-Ti. At the annealing temperature of 600 C, there was the presence of peaks corresponding to crystal planes of anatase and rutile TiO2. The relative intensities of anatase and rutile phases of the sample fabricated by RF sputtering were 3.62 and 10.25 %, respectively; while those of the sample fabricated by H2O2 oxidation were 21.27 and 3.20 %, respectively (The relative intensity of α-Ti phase was 100 %). The results investigated the peak shift of α-Ti phase in TiO2/Ti-6Al-4V nanostructured coatings fabricated by the two methods which was reasonably explained from the difference in the thermal expansion coefficients of Ti alloy and TiO2 components, as well as the difference in the ratio of anatase to rutile phases.

Thermal Stability of Nickel Silicide Films

1996 ◽  
Vol 427 ◽  
Author(s):  
S. R. Das ◽  
D.-X. XU ◽  
M. Nournia ◽  
L. Lebrun ◽  
A. Naem
Keyword(s):  
Thermal Stability ◽  
Film Thickness ◽  
Potential Application ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Ex Situ ◽  
Process Window ◽  
Nisi Phase ◽  
Sputter Deposited ◽  
Thermal Stability Of

AbstractIn view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness.

Influence of Magnetoelastic Anisotropy on Properties of Nanostructured Microwires

2013 ◽  
Vol 646 ◽  
pp. 59-66 ◽  
Author(s):  
Arcady Zhukov ◽  
Margarita Churyukanova ◽  
Lorena Gonzalez-Legarreta ◽  
Ahmed Talaat ◽  
Valentina Zhukova ◽  
...  
Keyword(s):  
Heat Capacity ◽  
Hysteresis Loops ◽  
Magnetic Behaviour ◽  
Soft Magnetic ◽  
Magnetoelastic Anisotropy ◽  
Thermal Expansion Coefficients ◽  
Magnetoelastic Energy ◽  
Expansion Coefficients ◽  
The Difference ◽  
Magneto Resistance

We studied the effect ofthe magnetoelastic ansitropy on properties of nanostructured glass-coated microwires with soft magnetic behaviour (Finemet-type microwires of Fe70.8Cu1Nb3.1Si14.5B10.6, Fe71.8Cu1Nb3.1Si15B9.1 and Fe73.8Cu1Nb3.1Si13B9.1 compositions) and with granular structure (Cu based Co-Cu microwires). The magnetoelastic energy originated from the difference in thermal expansion coefficients of the glass and metallic alloy during the microwires fabrication, affected the hysteresis loops, coercivity and heat capacity of Finemet-type microwires. Hysteresis loops of all as-prepared microwires showed rectangular shape, typical for Fe-rich microwires. As expected, coercivity, HC, of as-prepared microwires increases with decreasing of the ratio ρ defined as the ratio between the metallic nucleus diameter, d to total microwire diameter, D. On the other hand we observed change of heat capacity in microwires with different ratio ρ. In the case of Co-Cu microwires ρ- ratio affected the structure and the giant magneto-resistance of obtained microwires.

The improvement of thermal stability of nickel silicide by adding a thin Zr interlayer

2006 ◽  
Vol 83 (2) ◽  
pp. 345-350 ◽  
Author(s):  
Wei Huang ◽  
Li-Chun Zhang ◽  
Yu-Zhi Gao ◽  
Han-Yan Jin
Keyword(s):  
Thermal Stability ◽  
Nickel Silicide ◽  
Thermal Stability Of

Intrinsic Thermal Stability of Anisotropic Thin-Film Superconductors

1990 ◽  
Vol 112 (1) ◽  
pp. 10-15 ◽  
Author(s):  
M. I. Flik ◽  
C. L. Tien
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Stability Criterion ◽  
High Temperature Superconductors ◽  
Stability Criteria ◽  
Anisotropic Thermal Conductivity ◽  
Operating Current ◽  
Released Energy ◽  
The Stability ◽  
Thermal Stability Of

Intrinsic thermal stability denotes a situation where a superconductor can carry the operating current without resistance at all times after the occurrence of a localized release of thermal energy. This novel stability criterion is different from the cryogenic stability criteria for magnets and has particular relevance to thin-film superconductors. Crystals of ceramic high-temperature superconductors are likely to exhibit anisotropic thermal conductivity. The resultant anisotropy of highly oriented films of superconductors greatly influences their thermal stability. This work presents an analysis for the maximum operating current density that ensures intrinsic stability. The stability criterion depends on the amount of released energy, the Biot number, the aspect ratio, and the ratio of the thermal conductivities in the plane of the film and normal to it.

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