Effect of SiO2 Cap Layer on Thermal Stability of Nickel and Nickel-Cobalt Silicide

2006 ◽  
pp. 1322-1325
Author(s):  
Kil Jin Han ◽  
Yu Jeong Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Cap Layer ◽  
Thermal Stability Of

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

Effect of SiO2 Cap Layer on Thermal Stability of Nickel and Nickel-Cobalt Silicide

2006 ◽  
Vol 321-323 ◽  
pp. 1322-1325
Author(s):  
Kil Jin Han ◽  
Yu Jeong Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Annealing Temperature ◽  
Nickel Silicide ◽  
Cobalt Silicide ◽  
Thermal Expansion Coefficients ◽  
Nickel Cobalt ◽  
Expansion Coefficients ◽  
The Difference ◽  
The Stability ◽  
Thermal Stability Of

We investigated the effect of SiOcap layer on the thermal stability of nickel and nickel-cobalt silicide by measuring its sheet resistance. The stability of nickel silicide was deteriorated as a function of annealing temperature, while that of nickel-cobalt silicide was not. In case of both silicides, the SiOcap layer improved the stability. Tensile stress from the difference of thermal expansion coefficients between SiO2 and nickel silicide may suppress the agglomeration of nickel silicide.

Void formation during silicidation and its influence on the thermal stability of cobalt silicide

2002 ◽  
Vol 20 (4) ◽  
pp. 1171-1176 ◽  
Author(s):  
Nam-Sik Kim ◽  
Han-Seob Cha ◽  
Nag-Kyun Sung ◽  
Hyuk-Hyun Ryu ◽  
Ki-Seog Youn ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Void Formation ◽  
Cobalt Silicide ◽  
Thermal Stability Of

Impact of nitrogen (N/sub 2//sup +/) implantation into polysilicon gate on thermal stability of cobalt silicide formed on polysilicon gate

1998 ◽  
Vol 45 (9) ◽  
pp. 1912-1919 ◽  
Author(s):  
Wein-Town Sun ◽  
Ming-Chi Liaw ◽  
Kuang-Chien Hsieh ◽  
Charles Ching-Hsiang Hsu
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Polysilicon Gate ◽  
Thermal Stability Of

scholarly journals Improvements in Thermal Stability of Cobalt-Silicide Films by Adding Nickel

2008 ◽  
Vol 57 (9) ◽  
pp. 929-935 ◽  
Author(s):  
Hiromi SHIMAZU ◽  
Tomio IWASAKI ◽  
Hiroyuki OHTA ◽  
Hideo MIURA
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Thermal Stability Of

Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure

1996 ◽  
Vol 438 ◽  
Author(s):  
Jer-Shen Maa ◽  
Chien-Hsiung Peng
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
Ion Bombardment ◽  
Cobalt Silicide ◽  
Resistance Change ◽  
Cap Layer ◽  
Argon Ion Bombardment ◽  
The Stability ◽  
Substrate Doping ◽  
Argon Ion

AbstractThe stability of cobalt silicide formed on narrow polysilicon line degraded rapidly with shrinkage of linewidth as shown by the increase of sheet resistance after annealing. Stability was improved by adding a titanium interlayer under cobalt with or without a Ti or TiN cap layer. The stability was affected by silicide thickness and substrate doping. In best cases an increase of sheet resistance after annealing was still observed. Adding an Ar ion bombardment step improved the thermal stability drastically. This structure did not show any sheet resistance change after a 30 min annealing at 850°C, either with or without interlayer or cap layer.

Mechanism of Improved Thermal Stability of Cobalt Silicide Formed on Polysilicon Gate by Nitrogen Implantation

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5854-5860 ◽  
Author(s):  
Wein-Town Sun ◽  
Hai-Ming Lee ◽  
Ming-Chi Liaw ◽  
Charles Ching-Hsiang Hsu
Keyword(s):  
Thermal Stability ◽  
Cobalt Silicide ◽  
Nitrogen Implantation ◽  
Polysilicon Gate ◽  
Thermal Stability Of

Effect of ZnO cap layer deposition environment on thermal stability of the electrical properties of Al-doped ZnO films

2021 ◽  
Vol 129 (19) ◽  
pp. 195105
Author(s):  
Yufeng Zhang ◽  
Ziqi Fei ◽  
Huang Huang ◽  
Xue-ao Zhang ◽  
Rui Mu
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Zno Films ◽  
Layer Deposition ◽  
Cap Layer ◽  
Doped Zno ◽  
Thermal Stability Of

Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure

1996 ◽  
Vol 439 ◽  
Author(s):  
Jer-Shen Maa ◽  
Chien-Hsiung Peng
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
Ion Bombardment ◽  
Cobalt Silicide ◽  
Resistance Change ◽  
Cap Layer ◽  
Argon Ion Bombardment ◽  
The Stability ◽  
Substrate Doping ◽  
Argon Ion

AbstractThe stability of cobalt silicide formed on narrow polysilicon line degraded rapidly with shrinkage of linewidth as shown by the increase of sheet resistance after annealing. Stability was improved by adding a titanium interlayer under cobalt with or without a Ti or TiN cap layer. The stability was affected by silicide thickness and substrate doping. In best cases an increase of sheet resistance after annealing was still observed. Adding an Ar ion bombardment step improved the thermal stability drastically. This structure did not show any sheet resistance change after a 30 min annealing at 850°C, either with or without interlayer or cap layer.

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