Structure of Al-N Films Deposited by a Quantitative Dual Ion Beam Process

1983 ◽  
Vol 27 ◽  
Author(s):  
H.T.G. Hentzell ◽  
J.M.E. Harper ◽  
J.J. Cuomo
Keyword(s):  
Ion Beam ◽  
Film Surface ◽  
Ion Bombardment ◽  
Preferred Orientation ◽  
Low Energy ◽  
Ion Sputtering ◽  
Pronounced Change ◽  
Beam System ◽  
Axis Parallel ◽  
N Flux

ABSTRACTWe describe the structure of Al-N films deposited with N/Al ratios varying from 0 to 1. A dual ion beam system supplies the Al flux by inert ion sputtering, and the N flux by low energy (100–500 eV) N2+ ion bombardment of the growing film. For N/Al < 1, a cermet structure forms with large Al grains mixed with AlN. Above the composition N/Al = 1, excess N is rejected from the AlN. The AlN films show a pronounced change in preferred orientation from c-axis perpendicular to the film surface, to c-axis parallel to the film surface with increasing N2+ energy

Low‐energy ion beam system for materials studies

1982 ◽  
Vol 53 (5) ◽  
pp. 610-614
Author(s):  
G. C. Nelson ◽  
J. A. Borders ◽  
M. C. Oborny
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Beam System

Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

2005 ◽  
Vol 908 ◽  
Author(s):  
Abdurauf Dzhurakhalov ◽  
Sirojiddin Rahmatov ◽  
Nigorakhon Teshabaeva ◽  
Maqsud Yusupov
Keyword(s):  
Ion Implantation ◽  
Crystal Orientation ◽  
Ion Bombardment ◽  
Grazing Incidence ◽  
Low Energy ◽  
Layer By Layer ◽  
Ion Sputtering ◽  
Depth Distributions

AbstractThe ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.

scholarly journals Development of low energy ion beam system for space charge compensation experiments

2008 ◽  
Vol 79 (2) ◽  
pp. 02B712 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Junzo Ishikawa ◽  
Shigeki Sakai
Keyword(s):  
Space Charge ◽  
Ion Beam ◽  
Charge Compensation ◽  
Low Energy ◽  
Beam System

Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

1993 ◽  
Vol 316 ◽  
Author(s):  
T. Stacy ◽  
B. Y. Liaw ◽  
A. H. Khan ◽  
G. Zhao ◽  
E. M. Charlson ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Ion Bombardment ◽  
Low Energy ◽  
Silicon Substrates ◽  
Scanning Electron Micrographs ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Beam Surface

ABSTRACTLow energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

Direct Ga deposition by low-energy focused ion-beam system

1997 ◽  
Vol 386 (1-3) ◽  
pp. 254-258 ◽  
Author(s):  
T. Chikyow ◽  
N. Koguchi ◽  
A. Shikanai
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Beam System

Differences between Sputtering Methods in The Formation of Amorphous Magnetic Alloy Films

1985 ◽  
Vol 58 ◽  
Author(s):  
Y. Hoshi ◽  
M. Naoe
Keyword(s):  
Ion Beam ◽  
Film Surface ◽  
Ion Bombardment ◽  
Plasma Potential ◽  
Magnetic Alloy ◽  
Ion Beam Sputtering ◽  
Amorphous Films ◽  
Beam Sputtering ◽  
Amorphous Structures ◽  
Dual Ion Beam Sputtering

ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.

Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

1991 ◽  
Vol 236 ◽  
Author(s):  
E. Chason ◽  
P. Bedrossian ◽  
J.Y. Tsao ◽  
B.W. Dodson ◽  
S.T. Picraux
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Preferential Sputtering ◽  
Surface Vacancy ◽  
Atomic Coordination ◽  
Primary Interaction

AbstractWe have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

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