Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

2007 ◽  
Vol 556-557 ◽  
pp. 149-152 ◽  
Author(s):  
Bharat Krishnan ◽  
Hrishikesh Das ◽  
Huang De Lin ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Growth Conditions ◽  
Lower Growth ◽  
New Device ◽  
Selective Epitaxial Growth ◽  
Device Applications ◽  
Lower Temperature

Previously reported CVD epitaxial growth of 4H-SiC at temperatures down to and below 13000C using CH3Cl precursor offered a promise of new device applications that could benefit from lower-temperature growth process. In this work, selective epitaxial growth (SEG) of 4H-SiC mesas using conventional SiO2 low temperature mask is reported. Virtually no nucleation on the mask could be observed after SEG at 13000C. The mask could be easily removed after the growth, with no degradation of the surface of SiC substrate under the mask. For the growth conditions that normally resulted in growth rate of 2 /m/hr and defect-free epilayer morphology during regular full-wafer (non-SEG) epitaxy, the epilayer morphology during SEG was significantly degraded by the appearance of oriented triangular defects, while the growth rate increased more than three times in comparison to the blanket epitaxial growth due to the loading effect. The growth at optimized growth conditions and lower growth rate resulted in significant reduction of the surface defects, making this approach promising for obtaining device-quality mesas. The crystal quality of the mesas, defects at the mesa walls, formation of facets during SEG, and other effects are reported.

Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

2008 ◽  
Vol 600-603 ◽  
pp. 163-166 ◽  
Author(s):  
Hrishikesh Das ◽  
Bharat Krishnan ◽  
Galyna Melnychuk ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Conditions ◽  
Local Loading ◽  
Average Growth ◽  
Loading Effect ◽  
Selective Epitaxial Growth ◽  
Sio2 Mask ◽  
Growth Rate Distribution

In this work, the local-loading effect and its influence on the growth rate enhancement and the growth rate non-homogeneity is investigated during the halo-carbon low-temperature selective epitaxial growth (LTSEG) using an SiO2 mask. The average growth rate during the LTSEG can be more than three-times higher than in blanket epitaxy at the same growth conditions. Both the size of the LTSEG seed windows and the surrounding area covered with the mask determine the growth rate non-homogeneity. A model for predicting the growth rate distribution is suggested.

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

2006 ◽  
Vol 911 ◽  
Author(s):  
Yaroslav Koshka ◽  
Bharat Krishnan ◽  
Huang-De Lin ◽  
Galyna Melnychuk
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Surface ◽  
Epitaxial Layers ◽  
Selective Epitaxial Growth ◽  
Dopant Incorporation ◽  
Nitrogen Donor ◽  
Order Of Magnitude ◽  
Silicon Vapor

AbstractLow-temperature homoepitaxial growth of 4H-SiC using halo-carbon precursors was further investigated to address the problems limiting increase of the growth rate of the defect-free epilayers at growth temperatures below 1300°C. Enhanced etching of Si clusters in the gas phase was achieved by adding HCl during the low-temperature growth. The effective Si/C ratio above the growth surface was increased as a result of reduced depletion of silicon vapor species by cluster condensation, which resulted in drastically improved epilayer morphology and significant increase of the growth rate. An intentional insitu nitrogen doping of epitaxial layers during 1300°C growth on Si and C faces revealed more than an order of magnitude higher nitrogen donor incorporation in the C-face epitaxial layers. Finally, a feasibility of selective epitaxial growth using low-temperature masking materials such as SiO2 was demonstrated.

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

Limitation of Selective Epitaxial Growth Conditions in Gas Source MBE Using Si2H6

1990 ◽  
Vol 204 ◽  
Author(s):  
Junro Sakai ◽  
Ken-Ichi Aketagawa ◽  
Toru Tatsumi
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Native Oxide ◽  
Initial Growth ◽  
Selective Epitaxial Growth ◽  
Gas Source ◽  
Gas Source Mbe

ABSTRACTLow temperature and high growth rate selective epitaxial growth (SEG) on Si02 patterned Si (001) substrate in gas-source molecular-beam epitaxy (GS-MBE) using pure Si2H6 has been investigated by RHEED observation. In the temperature range of 550 to 850°C, SEG was completely obtained at an initial growth stage. Limiting conditions of SEG were closely related with critical volume of supply gas that was equal to the total amount molecules supplied on SiO2 surface during the incubation period of initial growth. The surface SiO2 was induced to evaporate with Si2H6 supplied above 800°C, so that thermal cleaning temperature for removing native oxide came down to 800°C. As a result, the maximum process temperature of Si SEG now became 800°C, and its growth rate reached as high as 645A/min at growth temperature of 700°C.

Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth

1995 ◽  
Vol 78 (7) ◽  
pp. 4710-4714 ◽  
Author(s):  
H.‐C. Tseng ◽  
C. Y. Chang ◽  
F. M. Pan ◽  
L. P. Chen
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Dry Etching ◽  
Selective Epitaxial Growth

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

2017 ◽  
Vol 897 ◽  
pp. 39-42 ◽  
Author(s):  
Ling Guo ◽  
Koji Kamei ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
High Resolution ◽  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Surface Defects ◽  
Growth Conditions ◽  
Adverse Impact ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Carbon Inclusion ◽  
High Resolution Microscopy

In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrate. Most carbon-inclusion defects developed into one of three types of epitaxial surface defects under normal epitaxial growth conditions. Among them, we found a regular hexagonal pit by high-resolution microscopy, which we regarded as a large-pit defect, and which had an adverse impact on the reverse electrical characteristics of Schottky barrier diodes. Conversion of a carbon-inclusion defect to a large-pit defect or a triangular defect could be reduced by reducing the C/Si ratio.

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