Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
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Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.
2010 ◽
Vol 645-648
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pp. 99-102
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2012 ◽
Vol 717-720
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pp. 133-136
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2009 ◽
Vol 615-617
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pp. 113-116
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2011 ◽
Vol 679-680
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pp. 59-62
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2006 ◽
Vol 11-12
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pp. 109-112
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