Electrical Transport in Heavily B-Doped Epitaxial Diamond and NCD

2006 ◽  
Vol 956 ◽  
Author(s):  
Milos Nesladek ◽  
Phillipe Bergonzo ◽  
Jiri Mares ◽  
Pavel Hubik
Keyword(s):  
Single Crystal ◽  
Transport Properties ◽  
Electrical Transport ◽  
Diamond Films ◽  
Epitaxial Films ◽  
Transport Study ◽  
Single Crystal Diamond ◽  
Czech Academy ◽  
Academy Of Sciences ◽  
Work Done

ABSTRACTThis paper deals with a LT transport study in B-doped diamond. To understand the electrical transport in heavily B-doped diamond and the influence of disorder onto the electrical transport, we have prepared nanocrystalline and epitaxial B-doped diamond films at CEA Saclay. The transport properties of these layers have been studied at the Institute of Physics Czech Academy of Sciences in Prague. It has been found that our B-doped nanocrystalline diamond exhibits also the SC transition, similarly as the original Russian work done on HPHT polycrystals or single crystal diamond. Additionally, the properties of (111) epitaxial films are discussed.

Electrical transport properties of FeSe single crystal under high magnetic field

2021 ◽  
Vol 64 (8) ◽  
Author(s):  
HongHui Wang ◽  
ZhaoHui Cheng ◽  
MengZhu Shi ◽  
DongHui Ma ◽  
WeiZhuang Zhuo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Transport Properties ◽  
High Magnetic Field ◽  
Electrical Transport ◽  
Electrical Transport Properties

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Conducting boron-doped single-crystal diamond films for high pressure research

2011 ◽  
Vol 31 (3) ◽  
pp. 388-398 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Georgiy Tsoi ◽  
Andrei V. Stanishevsky ◽  
Jeffrey M. Montgomery ◽  
Yogesh K. Vohra ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Diamond Films ◽  
Boron Doped ◽  
Single Crystal Diamond

Electrical Transport Properties of Epitaxial Films of Pb1−xSnxTe

1982 ◽  
Vol 73 (2) ◽  
pp. 503-507 ◽  
Author(s):  
A. L. Dawar ◽  
P. Kumar ◽  
S. K. Paradkar ◽  
T. D. Sadana ◽  
P. C. Mathur
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Epitaxial Films ◽  
Electrical Transport Properties
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