MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Conducting boron-doped single-crystal diamond films for high pressure research

2011 ◽  
Vol 31 (3) ◽  
pp. 388-398 ◽  
Author(s):  
Gopi K. Samudrala ◽  
Georgiy Tsoi ◽  
Andrei V. Stanishevsky ◽  
Jeffrey M. Montgomery ◽  
Yogesh K. Vohra ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Diamond Films ◽  
Boron Doped ◽  
Single Crystal Diamond

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator

2008 ◽  
Vol 600-603 ◽  
pp. 1349-1351 ◽  
Author(s):  
Kazuyuki Hirama ◽  
Yoshikatsu Jingu ◽  
Masaru Ichikawa ◽  
Hitoshi Umezawa ◽  
Hiroshi Kawarada
Keyword(s):  
Hydrogen Plasma ◽  
Polycrystalline Diamond ◽  
Drain Current ◽  
Gate Insulator ◽  
Current Channel ◽  
Single Crystal Diamond ◽  
Rf Performance ◽  
Hole Current ◽  
Hydrogen Termination ◽  
Termination Process

We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

Morphologic study of (100) single crystal diamond films epitaxially grown by chemical vapor deposition

1993 ◽  
Vol 132 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Z.M. Zhang ◽  
H.M. Cheng ◽  
S.H. Li ◽  
Q.Y. Cai ◽  
D.L. Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Morphologic Study ◽  
Single Crystal Diamond

Coherent Phonon-Mode Excitation in Submicron Single-Crystal Diamond Films with a Graphitized Layer Built-In

2017 ◽  
Vol 38 (6) ◽  
pp. 530-538 ◽  
Author(s):  
M. V. Tareeva ◽  
V. A. Dravin ◽  
R. A. Khmelnitsky ◽  
A. D. Kudryavtseva ◽  
M. A. Strokov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Phonon Mode ◽  
Diamond Films ◽  
Coherent Phonon ◽  
Single Crystal Diamond ◽  
Mode Excitation

Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations

2007 ◽  
Vol 556-557 ◽  
pp. 823-826
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sang Cheol Kim ◽  
Sung Jae Joo ◽  
Nam Kyun Kim
Keyword(s):  
Oscillation Frequency ◽  
Doping Concentration ◽  
Drain Current ◽  
Potential Well ◽  
Device Structure ◽  
Maximum Oscillation Frequency ◽  
Delta Doping ◽  
Simulation Results ◽  
Effective Channel ◽  
Rf Performances

A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.

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