p- and n-Type Charge Transport in Field-Effect Transistors of Pristine Poly(p-Phenylenevinylene)

2006 ◽  
Vol 965 ◽  
Author(s):  
Hiroshi Kayashima ◽  
Takeshi Yasuda ◽  
Katsuhiko Fujita ◽  
Tetsuo Tsutsui
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
The Other ◽  
High Gravity ◽  
Gravity Condition ◽  
Calcium Source

ABSTRACTPoly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition and p- and n-type PPV based field effect transistors (FET) have been fabricated. PPV FETs with gold source-drain electrodes showed the p-channel FET conduction. The FET characteristics of PPV were improved by annealing and the field-effect hole mobility was 8.8×10−4cm2V−1s−1. On the other hand, PPV FET with calcium source-drain electrodes showed the n-channel FET conduction and the field-effect electron mobility was 1.0×10−6cm2V−1s−1.

Time-of-Flight Technique Limits of Applicability for Thin-Films of Π-Conjugated Polymers

2012 ◽  
Vol 1402 ◽  
Author(s):  
Marco R. Cavallari ◽  
Vinicius R. Zanchin ◽  
Cleber A. Amorim ◽  
Gerson dos Santos ◽  
Fernando J. Fonseca ◽  
...  
Keyword(s):  
Thin Films ◽  
Conjugated Polymers ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Time Of Flight ◽  
Hole Mobility ◽  
Current Mode ◽  
Phenylene Vinylene ◽  
Polymeric Semiconductor ◽  
Order Of Magnitude

ABSTRACTTime of flight (ToF) is the most straightforward technique to determine polymeric semiconductor mobility for electronic applications. We demonstrate ToF limits of applicability to amorphous PPV derivatives, such as poly[2-methoxy-5-(3’,7’-dimethylloctyloxy)-1-4-phenylene vinylene] (MDMO-PPV) and poly[2-methoxy-5-(2’-ethylhexyloxy)-1-4-phenylene vinylene] (MEH-PPV), and polycrystalline poly(3-hexylthiophene) (P3HT). Hole and electron mobility (μ) in submicrometric films (200 – 500 nm) is overestimated compared to casted layers, due to reduced absorption capability, which is confirmed by Charge Extraction by Linearly Increasing Voltage (CELIV) measurements. Charge transport properties in nanometric films, such as for Field-Effect Transistors (FET), can not be studied by current-mode ToF. Hole mobility of ca. 10-5 cm2/Vs with Poole-Frenkel behavior for PPV derivatives and 10-3 cm2/Vs for P3HT is at least one order of magnitude higher than ToF results.

scholarly journals Synthesis of diketopyrrolopyrrole-based polymers with polydimethylsiloxane side chains and their application in organic field-effect transistors

2018 ◽  
Vol 5 (3) ◽  
pp. 172025 ◽  
Author(s):  
Inori Ohnishi ◽  
Kazuhito Hashimoto ◽  
Keisuke Tajima
Keyword(s):  
Thin Films ◽  
Conjugated Polymers ◽  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
High Solubility ◽  
Solid Films ◽  
Alkyl Side Chains

Linear polydimethylsiloxane (PDMS) was investigated as a solubilizing group for π-conjugated polymers with the aim of combining high solubility in organic solvents with the molecular packing in solid films that is advantageous for charge transport. Diketopyrrolopyrrole-based copolymers with different contents and substitution patterns of the PDMS side chains were synthesized and evaluated for application in organic field-effect transistors. The PDMS side chains greatly increased the solubility of the polymers and led to shorter d -spacings of the π-stacking in the thin films compared with polymers containing conventional branched alkyl side chains.

Modification of Semiconductor-Dielectric Interface in Organic Light-emitting Field-effect Transistors

2009 ◽  
Vol 1154 ◽  
Author(s):  
Yan Wang ◽  
Ryotaro Kumashiro ◽  
Naoya Komatsu ◽  
Katsumi Tanigaki
Keyword(s):  
Single Crystal ◽  
Electron Mobility ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Light Emitting ◽  
Dielectric Interface ◽  
Crystal Field Effect ◽  
Organic Light

AbstractIn this work, ambipolar rubrene single crystal field-effect transistors (FETs) with PMMA modification layer and Au/Ca as electrodes were fabricated. The electron mobility was studied in these devices. PMMA modification layer on the surface of SiO2 is necessary for electron behavior. We found that the device with PMMA modified insulator and Au-Ca asymmetric metals possessed hole mobility and electron mobility of 1.27 and 0.017 cm−2/Vs, respectively. Furthermore, the shift of light emitting with applied gate voltage was observed in this device.

Contorted tetrabenzoacenes of varied conjugation: charge transport study with single-crystal field-effect transistors

2017 ◽  
Vol 5 (31) ◽  
pp. 7935-7943 ◽  
Author(s):  
Ding-Chi Huang ◽  
Chi-Hsien Kuo ◽  
Man-Tzu Ho ◽  
Bo-Chao Lin ◽  
Wei-Tao Peng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Charge Transport ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Transport Study ◽  
Crystal Field Effect

A series of nonplanar tetrabenzo-fused acenes exhibited a hole mobility from 0.044 cm2 V−1 s−1 up to 0.81 cm2 V−1 s−1 in their single crystal field-effect transistors.

Solution-grown unidirectionally oriented crystalline thin films of a U-shaped thienoacene-based semiconductor for high-performance organic field-effect transistors

2017 ◽  
Vol 5 (24) ◽  
pp. 5872-5876 ◽  
Author(s):  
Tatsuya Mori ◽  
Tatsuya Oyama ◽  
Hideaki Komiyama ◽  
Takuma Yasuda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Lamellar Structures

Strategically dialkylated bis(benzo[4,5]thieno)[2,3-b:3′,2′-d]thiophene molecules having an overall U-shaped configuration can self-organize into bilayer lamellar structures, demonstrating high charge-transport properties in thin-film organic transistors.

Influence of the grain orientation on the charge transport properties of organic field-effect transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (69) ◽  
pp. 36729-36737 ◽  
Author(s):  
J. C. Ribierre ◽  
Y. Yokota ◽  
M. Sato ◽  
A. Ishizuka ◽  
T. Tanaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Grain Orientation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

We report the effects of crystalline grain orientation on the charge transport properties of a J-aggregate bisazomethine dye (DE2) in thin films.

Diethynyl Aryl Derivatives for P-Channel and N-Channel Organic Field-Effect Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Takeshi Yasuda ◽  
Kimiaki Kashiwagi ◽  
Yoshitomi Morizawa ◽  
Tetsuo Tsutsui
Keyword(s):  
Field Effect ◽  
High Field ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
The Other ◽  
Organic Field Effect Transistors ◽  
Current Ratio ◽  
Naphthalene Derivative ◽  
Aryl Derivative ◽  
P Type

AbstractOrganic field-effect transistors (OFETs) consisted of vacuum-evaporated diethynyl aryl derivatives were prepared and the device characteristics were evaluated. The fabricated OFETs showed typical p-type characteristics for diethynyl naphthalene derivative with two end naphthyl groups. By optimizing the fabrication process, the device exhibited a high field-effect hole mobility up to 0.12 cm2V−1s−1 and a high on/off current ratio of 3.3×105. On the other hand, OFETs showed typical n-type characteristics for diethynyl aryl derivative with two end heptafluoronaphthyl groups. We have observed clear changes from p-channel to n-channel conductions in OFETs by chemically modifying diethynyl aryl derivatives.

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