Time-of-Flight Technique Limits of Applicability for Thin-Films of Π-Conjugated Polymers

ABSTRACTTime of flight (ToF) is the most straightforward technique to determine polymeric semiconductor mobility for electronic applications. We demonstrate ToF limits of applicability to amorphous PPV derivatives, such as poly[2-methoxy-5-(3’,7’-dimethylloctyloxy)-1-4-phenylene vinylene] (MDMO-PPV) and poly[2-methoxy-5-(2’-ethylhexyloxy)-1-4-phenylene vinylene] (MEH-PPV), and polycrystalline poly(3-hexylthiophene) (P3HT). Hole and electron mobility (μ) in submicrometric films (200 – 500 nm) is overestimated compared to casted layers, due to reduced absorption capability, which is confirmed by Charge Extraction by Linearly Increasing Voltage (CELIV) measurements. Charge transport properties in nanometric films, such as for Field-Effect Transistors (FET), can not be studied by current-mode ToF. Hole mobility of ca. 10-5 cm2/Vs with Poole-Frenkel behavior for PPV derivatives and 10-3 cm2/Vs for P3HT is at least one order of magnitude higher than ToF results.

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Micropatterning and transferring of polymeric semiconductor thin films by hot lift-off and polymer bonding lithography in fabrication of organic field effect transistors (OFETs) on flexible substrate

Applied Surface Science ◽

10.1016/j.apsusc.2011.05.006 ◽

2011 ◽

Vol 257 (22) ◽

pp. 9264-9268 ◽

Cited By ~ 7

Author(s):

Xinhong Yu ◽

Zhe Wang ◽

Sunyang Yu ◽

Dongge Ma ◽

Yanchun Han

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Transistors ◽

Flexible Substrate ◽

Organic Field Effect Transistors ◽

Polymeric Semiconductor ◽

Semiconductor Thin Films ◽

Lift Off

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Methoxylation of quinoidal bithiophene as a single regioisomer building block for narrow-bandgap conjugated polymers and high-performance organic field-effect transistors

Journal of Materials Chemistry C ◽

10.1039/d0tc02199g ◽

2020 ◽

Vol 8 (43) ◽

pp. 15168-15174 ◽

Cited By ~ 1

Author(s):

Yunlong Sun ◽

Yunpeng Zhang ◽

Yang Ran ◽

Longxian Shi ◽

Qingsong Zhang ◽

...

Keyword(s):

Conjugated Polymers ◽

Building Block ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Hole Mobility ◽

Methoxyl Group ◽

Organic Field Effect Transistors ◽

Narrow Bandgap

Methoxyl group was introduced to obtain isomer-free methoxylation quinoidal bithiophene building block. Four polymers displayed narrow bandgap (<1.20 eV) and hole mobility of up to 2.70 cm2 V−1 s−1.

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Synthesis of diketopyrrolopyrrole-based polymers with polydimethylsiloxane side chains and their application in organic field-effect transistors

Royal Society Open Science ◽

10.1098/rsos.172025 ◽

2018 ◽

Vol 5 (3) ◽

pp. 172025 ◽

Cited By ~ 3

Author(s):

Inori Ohnishi ◽

Kazuhito Hashimoto ◽

Keisuke Tajima

Keyword(s):

Thin Films ◽

Conjugated Polymers ◽

Charge Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Side Chains ◽

Organic Field Effect Transistors ◽

High Solubility ◽

Solid Films ◽

Alkyl Side Chains

Linear polydimethylsiloxane (PDMS) was investigated as a solubilizing group for π-conjugated polymers with the aim of combining high solubility in organic solvents with the molecular packing in solid films that is advantageous for charge transport. Diketopyrrolopyrrole-based copolymers with different contents and substitution patterns of the PDMS side chains were synthesized and evaluated for application in organic field-effect transistors. The PDMS side chains greatly increased the solubility of the polymers and led to shorter d -spacings of the π-stacking in the thin films compared with polymers containing conventional branched alkyl side chains.

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Synthesis of novel conjugated polymers based on benzo[1,2-d:4,5-d′]-bis([1,2,3]triazole) for applications in organic field-effect transistors

Polymer Chemistry ◽

10.1039/c8py01526k ◽

2019 ◽

Vol 10 (12) ◽

pp. 1471-1479 ◽

Cited By ~ 6

Author(s):

Yao-Ming Yeh ◽

Chiao-Hui Huang ◽

Shih-Hao Peng ◽

Chia-Chih Chang ◽

Chain-Shu Hsu

Keyword(s):

Conjugated Polymers ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Organic Field Effect Transistors

New conjugated polymers based on 4,8-bis(5-bromothiophen-2-yl)-2,6-bis(2-octyldodecyl)-2H-benzo[1,2-d:4,5-d′]- bis([1,2,3]triazole)-6-ium-5-ide (BTBBTa) displayed the highest hole mobility of 0.21 cm2 V−1 s−1.

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p- and n-Type Charge Transport in Field-Effect Transistors of Pristine Poly(p-Phenylenevinylene)

MRS Proceedings ◽

10.1557/proc-0965-s06-11 ◽

2006 ◽

Vol 965 ◽

Author(s):

Hiroshi Kayashima ◽

Takeshi Yasuda ◽

Katsuhiko Fujita ◽

Tetsuo Tsutsui

Keyword(s):

Thin Films ◽

Charge Transport ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

The Other ◽

High Gravity ◽

Gravity Condition ◽

Calcium Source

ABSTRACTPoly(p-phenylenevinylene) (PPV) thin films were prepared by using drop casting under high gravity condition and p- and n-type PPV based field effect transistors (FET) have been fabricated. PPV FETs with gold source-drain electrodes showed the p-channel FET conduction. The FET characteristics of PPV were improved by annealing and the field-effect hole mobility was 8.8×10−4cm2V−1s−1. On the other hand, PPV FET with calcium source-drain electrodes showed the n-channel FET conduction and the field-effect electron mobility was 1.0×10−6cm2V−1s−1.

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Incorporation of polycyclic azaborine compounds into polythiophene-type conjugated polymers for organic field-effect transistors

Chemical Communications ◽

10.1039/c5cc06927k ◽

2015 ◽

Vol 51 (99) ◽

pp. 17532-17535 ◽

Cited By ~ 65

Author(s):

Xiao-Ye Wang ◽

Fang-Dong Zhuang ◽

Jie-Yu Wang ◽

Jian Pei

Keyword(s):

Conjugated Polymers ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Organic Field Effect Transistors

A thiophene-fused polycyclic azaborine skeleton was successfully employed in conjugated polymers, showing a hole mobility of 0.38 cm2 V−1 s−1 in field-effect transistors.

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Air Processed Cs2AgBiBr6 Lead-free Double Perovskite High-mobility Thin Film Field-effect Transistors

10.21203/rs.3.rs-1055848/v1 ◽

2021 ◽

Author(s):

Gnanasampanthan Abiram ◽

Fatemeh Heidari Gourji ◽

Selvakumar Pitchaiya ◽

Punniamoorthy Ravirajan ◽

Thanihaichelvan Murugathas ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Double Perovskite ◽

Hole Mobility ◽

Channel Length ◽

P Type

Abstract This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirms the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in SEM image and was found to be around 412 (±44) nm the larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated on an electrode deposited heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric under ideal conditions in air processing under ambient pressure and temperature. The Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2s-1V-1 was obtained for the FETs with a channel length of 30 µm, and the hole mobility was reduced by an order of magnitude (0.012 cm2s-1V-1) when the channel length was doubled. The on current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in or FET that could be attributed to the much larger grain size of Cs2AgBiBr6 film made in this work.

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