High Energy Ion Beam Annealing in Implanted CdTe

1988 ◽  
Vol 100 ◽  
Author(s):  
S. P. Withrow ◽  
A. Lusnikov ◽  
H. J. Jiménez-Gonz´lez- ◽  
G. Dresselhaus
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
High Energy ◽  
Near Surface ◽  
Energy Beam ◽  
Annealing Effects ◽  
Lattice Damage ◽  
Implantation Process ◽  
Substrate Temperatures ◽  
Cu Ions

ABSTRACTThe annealing effects of a high energy beam of Cu ions on implanted CdTe crystals are studied. Single crystals of CdTe have been implanted with Eu (energy 60 keV, fluence 1 × 1016 cm−2) at substrate temperatures of 25°C, and 400°C. Lattice damage introduced by the implantation process was measured by Rutherford backscattering. The samples were then implanted with high energy Cu ions (energy 3.5 MeV, fluence 0.5 × 1016 cm−2) at substrate temperatures of 25°C and 200°C. Channeling spectra from these samples indicate a reduction in the near-surface lattice damage as a result of the Cu implantation that can be unambiguously separated from the external heating of the substrate.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

A Channeling Study on Mg Implanted InSb Single Crystals

1983 ◽  
Vol 27 ◽  
Author(s):  
H.W. Alberts
Keyword(s):  
Melting Point ◽  
Radiation Damage ◽  
Linear Dependence ◽  
Room Temperature ◽  
Annihilation Rate ◽  
Sharp Reduction ◽  
Complex Defect ◽  
Annealing Effects ◽  
Implantation Process ◽  
Substrate Temperatures

ABSTRACTProton and α-particle channeling were used to study the radiation damage caused by the implantation of 160 keV Mg ions in InSb. The implantations took place at various substrate temperatures ranging from room temperature to temperatures just below the melting point and doses ranging from 5.1013 to 1.1016 Mg+ cm−2. The isochronal annealing of the room temperature implanted crystals started at 200°C and damage could not be completely removed even at temperatures just below the melting point. For crystals implanted at elevated substrate temperatures no annealing effects during implantation occured up to 400°C. Above 400°C a sharp reduction of damage indicates that the rate of formation of more complex defect configurations during the implantation process becomes smaller than the annihilation rate of the vacancy-interstitial pairs. A non-linear dependence exists between the degree of radiation damage in the InSb lattice and the implanted dose.

Intense Ion-Beam Treatment of Materials

MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 58-62 ◽  
Author(s):  
Harold A. Davis ◽  
Gennady E. Remnev ◽  
Regan W. Stinnett ◽  
Kiyoshi Yatsui
Keyword(s):  
Energy Density ◽  
Surface Treatment ◽  
Laser Processing ◽  
Beam Energy ◽  
Ion Beam ◽  
The United States ◽  
High Energy ◽  
High Energy Density ◽  
X Rays ◽  
Near Surface

Over the past decade, researchers in Japan, Russia, and the United States have been investigating the application of intense-pulsed-ion-beam (IPIB) technology (which has roots in inertial confinement fusion programs) to the surface treatment and coating of materials. The short range (0.1–10 μm) and high-energy density (1–50 J/cm2) of these short-pulsed (t ≥ 1 μs) beams (with ion currents I = 5–50 kA, and energies E = 100–1,000 keV) make them ideal flash-heat sources to rapidly vaporize or melt the near-surface layer of targets similar to the more familiar pulsed laser deposition (PLD) or laser surface treatment. The vaporized material can form coatings on substrates, and surface melting followed by rapid cooling (109 K/s) can form amorphous layers, dissolve precipitates, and form nonequilibrium microstructures.An advantage of this approach over laser processing is that these beams deliver 0.1–10 KJ per pulse to targets at expected overall electrical efficiencies (i.e., the ratio of extracted ion-beam energy to the total energy consumed in generating the beam) of 15–40% (compared to < 1% for the excimer lasers often used for similar applications). Consequently IPIB hardware can be compact and require relatively low capital investment. This opens the promise of environmentally conscious, low-cost, high-throughput manufacturing. Further, efficient beam transport to the target and excellent coupling of incident ion energy to targets are achieved, as opposed to lasers that may have limited coupling to reflective materials or produce reflecting plasmas at high incident fluence. The ion range is adjustable through selection of the ion species and kinetic energy, and the beam energy density can be tailored through control of the beam footprint at the target to melt (1–10 J/cm2) or to vaporize (10–50 J/cm2) the target surface. Beam pulse durations are short (≥ 1 μs) to minimize thermal conduction. Some disadvantages of IPIB processing over laser processing include the need to form and propagate the beams in vacuum, and the need for shielding of x-rays produced by relatively low-level electron current present in IPIB accelerators. Also these beams cannot be as tightly focused onto targets as lasers, making them unsuitable for applications requiring treatment on small spatial scales.

Pulsed Ion Beam Annealing of Metal and Silicide Thin Films on Silicon

1982 ◽  
Vol 40 ◽  
pp. 458-459
Author(s):  
L.J. Chen ◽  
L.S. Hung ◽  
J.W. Mayer
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Surface Region ◽  
Molten Layer ◽  
Near Surface ◽  
Contact Materials ◽  
Energy Beam ◽  
Nickel Thin Films ◽  
Metal Silicides ◽  
Silicide Growth

Metal silicides have found increasing use in microelectronic industry as contact materials. Energy beam annealing offers controlled energy deposition in the near surface region so that silicide growth is achieved without heating the entire layer. When pulsed laser and electron at high power density were applied to metal-semiconductor systems, cellular structures have been formed with silicon columns surrounded by silicide walls as a result of the formation of the molten layer of metal and silicon followed by segregation due to constitutional supercooling as the melt front moves toward the surface. A wealth of microstructures were observed in pulsed ion beam annealed nickel thin films on silicon. An interface melting mechanism was invoked to explain the results. In this paper, we report further data on the subject.

THE USE OF MARKERS AND NUCLEAR MICROANALYSIS TO MONITOR ATOMIC TRANSPORT INDUCED BY ION BOMBARDMENT IN SOLIDS

1995 ◽  
Vol 09 (03n04) ◽  
pp. 163-186 ◽  
Author(s):  
LIONEL THOMÉ ◽  
FRÉDÉRICO GARRIDO
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Near Surface ◽  
Energetic Ions ◽  
Nuclear Microanalysis ◽  
Atomic Transport ◽  
Very High Energy ◽  
Marker Profile

This paper describes an original methodology developed to study the atomic transport in a solid target bombarded with energetic ions. This methodology is based on the use of heavy marker atoms introduced in the near-surface layer of the investigated target and the analysis via nuclear microanalysis techniques of the modifications of the marker profile due to ion bombardment. Results obtained in the case of low- or medium-energy (<10 keV/u ) ion irradiation, leading to the well-known ion-beam-mixing process induced by nuclear elastic collisions, are reported in the first part. The second part deals with the less-investigated case of very-high-energy (>1 MeV/u ) ion irradiation, where a dramatic plastic deformation mechanism induced by electronic excitation has been recently discovered.

Ion Beam Synthesis of IrSi3 by Implantation of 2 MeV Ir Ions+

1992 ◽  
Vol 279 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg ◽  
M. F. Chisholm
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Layer Formation ◽  
Cross Sectional ◽  
Implantation Energy ◽  
Precipitate Coarsening ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Lattice Damage ◽  
Substrate Temperatures

ABSTRACTThe formation of a buried IrSi3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450–550°C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi3 layer is produced at 550°C by implanting ≥ 3.4 × 1017 Ir/cm2 and subsequently annealing for 1 h at 1000°C plus 5 h at 1100°C. At a dose of 3.4 × 1017 Ir/cm2, the thickness of the layer varied between 120 and 190 nm and many large IrSi3 precipitates were present above and below the film. Increasing the dose to 4.4 × 1017 Ir/cm2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved.

Atomistic Simulation of Low-Energy Beam Deposition

1988 ◽  
Vol 100 ◽  
Author(s):  
Brian W. Dodson
Keyword(s):  
Atomistic Simulation ◽  
Incident Beam ◽  
Initial Energy ◽  
Low Energy ◽  
Many Body ◽  
Near Surface ◽  
Energy Beam ◽  
Beam Incident ◽  
Lattice Damage ◽  
Beam Deposition

ABSTRACTLow-energy (50 eV) homoepitaxial beam deposition of silicon is simulated using many-body silicon potentials and molecular dynamics techniques. Results are presented for the case of a 50 eV neutral silicon beam incident on the (2×1) dimer reconstructed Si(100) surface. The beam is aligned along (110) symmetry directions, which are the most natural channeling directions in the silicon lattice. Roughly 10% of the incident beam atoms are scattered from the surface with a small fraction of their initial energy. About half of the incident atoms penetrate the lattice, but scatter strongly and come to rest within 10–15Å of the surface. The remainder are steered accurately into the bulk (110) channels, where they penetrate some 30–100 Å into the lattice. Those atoms which do not undergo bulk channeling cause considerable lattice damage to the near-surface (depth ≥10Å) region.

Annealing Effects in Hydrogenated Silicon Nitride Films during High Energy Ion Beam Irradiation

1995 ◽  
Vol 142 (9) ◽  
pp. 3210-3214 ◽  
Author(s):  
Joong‐Whan Lee ◽  
Sang‐Hwan Lee ◽  
Hyung‐Joun Yoo ◽  
Mu‐Shik Jhon ◽  
Ryong Ryoo
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
High Energy ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Hydrogenated Silicon ◽  
Silicon Nitride Films ◽  
Annealing Effects

Crack Nucleation in ion Beam Irradiated Magnesium Oxide and Sapphire Crystals

1997 ◽  
Vol 504 ◽  
Author(s):  
V. N. Gurarie ◽  
D. N. Jamieson ◽  
R. Szymanski ◽  
A. V. Orlov ◽  
J. S. Williams
Keyword(s):  
Thermal Stress ◽  
Ion Implantation ◽  
Magnesium Oxide ◽  
Stress Resistance ◽  
Large Scale ◽  
Crack Nucleation ◽  
Ion Beam ◽  
High Energy ◽  
Pulsed Plasma ◽  
Near Surface

ABSTRACTMonocrystals of magnesium oxide and sapphire have been subjected to ion implantation with 86 keV Si− ions to a dose of 5×1016 cm−2 and with 3 MeV H+ ions with a dose of 4.8×1017 cm−2 prior to thermal stress testing in a pulsed plasma. Fracture and deformation characteristics of the surface layer were measured in ion implanted and unimplanted samples using optical and scanning electron microscopy. Ion implantation is shown to modify the near-surface structure of samples by introducing damage, which makes crack nucleation easier under the applied stress. The effect of ion dose on the thermal stress resistance is investigated and the critical doses which produce a noticeable change in the stress resistance is determined for sapphire crystals implanted with 86 keV Si−. In comparison with 86 keV Si− ions the high energy implantation of sapphire and magnesium oxide crystals with 3 MeV H+ ions results in the formation of large-scale defects, which produce a low density crack system and cause a considerable reduction in the resistance to damage. Fracture mechanics principles are applied to evaluate the size of the implantation-induced microcracks which are shown to be comparable with the ion range and the damage range in the crystals tested. Possible mechanisms of crack nucleation for a low and high energy ion implantation are discussed.

Amorphous Phase Transformation During Rapid Thermal Annealing of Ion-Implanted Si

1985 ◽  
Vol 52 ◽  
Author(s):  
D. Kirillov ◽  
R. A. Powell ◽  
D. T. Hodul
Keyword(s):  
Thermal Annealing ◽  
Amorphous Phase ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
High Energy ◽  
Local Order ◽  
High Dose ◽  
Annealing Effects ◽  
Ion Species ◽  
Low Order

ABSTRACTVariations in the local order of the amorphous phase of Si produced by ion implantation and subjected to rapid thermal annealing were studied using the Raman scattering technique. It was found that the low order amorphous phase was formed independently of implantation ion species for low dose, low energy implantation at room temperature. For high energy, high dose implantation with heavy ions, the ion beam annealing effects were apparent and the higher order amorphous phase was formed. Rapid thermal annealing produced transformation from the low order phase to the high order amorphous phase. The continuous transformation was completed when the detectable crystalline phase regrowth started.

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