Role of SrTiO3 Seed Layer on Low-temperature Crystallization of Pb(Zr, Ti)O3 Films Prepared by Metalorganic Chemical Vapor Deposition

AbstractRole of SrTiO3 seed layer on low-temperature crystallization of Pb(Zr, Ti)O3 (PZT) film was investigated. The SrTiO3 seeds were prepared by pulsed laser deposition (PLD) with the temperature range of 400-600 °C and PZT films were prepared by thermal MOCVD. The pyrochlore free PZT films can be successfully crystallized at around 340 °C on SrTiO3 seed layers by thermal MOCVD. It was found that the role of SrTiO3 seed layer is not only pyrochlore suppression but also perovskite promotion. It is also considered that crystallinity, surface coverage and seed layer thickness are important parameters for low-temperature crystallization and electrical properties of PZT films.

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Low-temperature crystallization of oriented ZnO film using seed layers prepared by sol–gel method

Journal of Materials Science ◽

10.1007/s10853-011-5263-8 ◽

2011 ◽

Vol 46 (10) ◽

pp. 3537-3543 ◽

Cited By ~ 20

Author(s):

Hiroyo Segawa ◽

Hideaki Sakurai ◽

Reiko Izumi ◽

Toshiharu Hayashi ◽

Tetsuji Yano ◽

...

Keyword(s):

Low Temperature ◽

Sol Gel ◽

Zno Film ◽

Gel Method ◽

Sol Gel Method ◽

Low Temperature Crystallization ◽

Temperature Crystallization ◽

Seed Layers

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PROPERTIES OF COPPER LAYER ON Si(100) FROM Cu(dmamb)2

Surface Review and Letters ◽

10.1142/s0218625x10013801 ◽

2010 ◽

Vol 17 (03) ◽

pp. 307-310

Author(s):

SEONG-EON JIN ◽

DOHAN LEE ◽

SEUNGMOO LEE ◽

JONG-MUN CHOI ◽

BUMJOON KIM ◽

...

Keyword(s):

Electrical Resistivity ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Buffer Layer ◽

Barrier Layer ◽

Vapor Deposition ◽

Seed Layer ◽

Chemical Vapor ◽

Cu Films ◽

Seed Layers

Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb) 2 precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity.

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Impact of thin SrTiO3 seed layer to achieve low-temperature crystallization below 300°C and ferroelectricity of lead zirconate titanate thin film

Applied Physics Letters ◽

10.1063/1.2390671 ◽

2006 ◽

Vol 89 (20) ◽

pp. 202907 ◽

Cited By ~ 21

Author(s):

Ji-Won Moon ◽

Shogo Tazawa ◽

Kazuo Shinozaki ◽

Naoki Wakiya ◽

Nobuyasu Mizutani

Keyword(s):

Thin Film ◽

Low Temperature ◽

Lead Zirconate Titanate ◽

Seed Layer ◽

Lead Zirconate ◽

Zirconate Titanate ◽

Low Temperature Crystallization ◽

Titanate Thin Film ◽

Temperature Crystallization

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Effect of SrTiO3 seed layer deposition time and thickness on low-temperature crystallization and electrical properties of Pb(Zr, Ti)O3 films by metalorganic chemical vapor deposition

Materials Science and Engineering B ◽

10.1016/j.mseb.2007.09.051 ◽

2008 ◽

Vol 148 (1-3) ◽

pp. 22-25 ◽

Cited By ~ 6

Author(s):

Ji-Won Moon ◽

Naoki Wakiya ◽

Keisuke Fujito ◽

Naohiko Iimori ◽

Takanori Kiguchi ◽

...

Keyword(s):

Electrical Properties ◽

Vapor Deposition ◽

Seed Layer ◽

Metalorganic Chemical Vapor Deposition ◽

Deposition Time ◽

Chemical Vapor ◽

Layer Deposition ◽

Low Temperature Crystallization ◽

Metalorganic Chemical ◽

Temperature Crystallization

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Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer

Scripta Materialia ◽

10.1016/j.scriptamat.2008.10.003 ◽

2009 ◽

Vol 60 (4) ◽

pp. 218-220 ◽

Cited By ~ 15

Author(s):

Q.G. Chi ◽

W.L. Li ◽

B. Feng ◽

C.Q. Liu ◽

W.D. Fei

Keyword(s):

Thin Films ◽

Low Temperature ◽

Seed Layer ◽

Low Temperature Crystallization ◽

Temperature Crystallization

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Thermographic Study of Elastomers III. Peculiarities of Crystallization of Natural Rubber

Rubber Chemistry and Technology ◽

10.5254/1.3539059 ◽

1967 ◽

Vol 40 (2) ◽

pp. 458-462

Author(s):

B. Ya Teitel'baum ◽

N. P. Anoshina

Keyword(s):

High Temperature ◽

Low Temperature ◽

Natural Rubber ◽

Crystallization Process ◽

Crystallographic Form ◽

Sharp Difference ◽

Thermographic Study ◽

Low Temperature Crystallization ◽

Temperature Crystallization

Abstract Thermographic (DTA) study reveals two independent melting regions of natural rubber crystallites and a gap between them which is determined by a sharp difference in the rates of the crystallization process. Crystallites formed at a low temperature (− 25° C) and at room temperatures are distinguished by the degree of development, but pertain to the same crystallographic form. High temperature crystals play the role of seed in low temperature crystallization. During the melting of low temperature crystallites of natural rubber, they recrystallize with a rise in the melting point (without reaching, however, room temperatures). The appearance of this phenomenon on the thermograms is determined by the relation between rates of crystallization and of heating in the course of the experiment. The rate of crystallization of natural rubber and the relative amount of crystallites formed at − 25° C were studied by DTA; the effect of rubber plasticization on these magnitudes was noted.

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